A5050339052- Topological Materials and Phenomena
- 2D Materials and Applications
- Advanced Condensed Matter Physics
- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Phase-change materials and chalcogenides
- Solid State Laser Technologies
- Perovskite Materials and Applications
- High-pressure geophysics and materials
- Graphene research and applications
- Photorefractive and Nonlinear Optics
- MXene and MAX Phase Materials
- Advanced Fiber Laser Technologies
- Thermal properties of materials
- Diamond and Carbon-based Materials Research
- Magnetic properties of thin films
- Magnetic and transport properties of perovskites and related materials
- Physics of Superconductivity and Magnetism
Shanghai Institute of Technology
2024
Renmin University of China
2022-2023
Chongqing University
2020
Natural superlattice structures MnBi2Te4(Bi2Te3)n (n = 1, 2, ...), in which magnetic MnBi2Te4 layers are separated by nonmagnetic Bi2Te3 layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their two-dimensional limit, is crucial further exploration phenomena, remains elusive. Here, complex ferromagnetic-antiferromagnetic coexisting ground states that persist down to 2-septuple...
MnBi_{2}Te_{4}, an intrinsic magnetic topological insulator, has shown layer-number-correlated and phases. More interestingly, in the isostructural material MnSb_{2}Te_{4}, antiferromagnetic (AFM) ferromagnetic (FM) states have been both observed bulk counterparts, which are also predicted to be topologically nontrivial. Revealing layer-number-dependent properties of MnSb_{2}Te_{4} down a single septuple layer (SL) is great significance for exploring phenomena. However, this still elusive....
Abstract The emergence of atomically thin valleytronic semiconductors and 2D ferromagnetic materials is opening up new technological avenues for future information storage processing. A key fundamental challenge to identify physical knobs that may effectively manipulate the spin‐valley polarization, preferably in device context. Here, a novel spin functional exhibits both electrical magnetic tunability fabricated, by contacting monolayer MoSe 2 with semiconductor Cr Ge Te 6 . Remarkably,...
GeSe was theoretically predicted to have thermoelectric (TE) performance as high SnSe. However, the relatively TE not achieved experimentally in doped samples with an original orthorhombic structure but observed Ag(Sb,Bi)(Se,Te)2 alloyed that crystalize either a rhombohedral or cubic structure. Herein, clarify crystal structure-dependent properties, electrical and thermal transport properties of GeSe1-xTex (0 ≤ x 0.5), where orthorhombic, hexagonal, phases are stable at room temperature for...
The magnetic van der Waals crystals ${(\mathrm{Mn}\phantom{\rule{0.16em}{0ex}}{X}_{2}{\mathrm{Te}}_{4})}_{m}{({X}_{2}{\mathrm{Te}}_{3})}_{n}$ $(X=\mathrm{Sb},\phantom{\rule{0.28em}{0ex}}\mathrm{Bi})$ have drawn significant attention due to their rich topological properties and tenability by external field. In this letter, we report on the discovery of superconductivity in insulator candidate ${\mathrm{MnSb}}_{4}{\mathrm{Te}}_{7}$ ($m=1$, $n=1$) via application high pressure....
We investigate the evolution of magnetic properties as well content and distribution Mn for Mn(Sb 1− x Bi ) 2 Te 4 single crystals grown by large-temperature-gradient chemical vapor transport method. It is found that ferromagnetic MnSb changes to antiferromagnetism with doping when ≥ 0.25. Further analysis implies occupations ions at Sb/Bi site have a strong influence on ground states these systems. With decrease increase , system will favor state. In addition, rapid T C/N increasing ≤ 0.25...
MnSb2Te4 has attracted extensive attention because of its rich and adjustable magnetic properties. Here, using a modified crystal growth method, ferrimagnetic crystals with enhanced Curie temperature (TC) about 40 K dominant hole-type carriers intrinsic anomalous Hall effect is obtained. Time- angle-resolved photoemission spectroscopy reveals that surface states are absent in both antiferromagnetic MnSb2Te4, implying they have topologically trivial electronic structures. We propose the...
Magnetic topological insulators, possessing both magnetic order and electronic structure, provides an excellent platform to research unusual physical properties. Here, we report a high-pressure study on the anomalous Hall effect of TI MnSb4Te7 through transports measurements combined with first-principle theoretical calculations. We discover that ground state experiences phase transition from A-type antiferromagnetic ferromagnetic dominating at 3.78 GPa, although its crystal sustains...
The exchange bias (EB) effect is a fundamental phenomenon in conventional systems containing interfaces of ferromagnetic (FM) and antiferromagnetic (AFM) materials plays crucial role magnetic memory technologies. Due to the rapid development van der Waals (vdW) magnets, EB can be constructed by assembling vdW FM AFM together without constraints lattice matching, greatly broadening understanding two-dimensional (2D) magnetism. However, singular 2D magnets down monolayer has not been realized,...
Er<sup>3+</sup> and Yb<sup>3+</sup> co-doped bismuth silicate (Bi<sub>4</sub>Si<sub>3</sub>O<sub>12</sub>, BSO) crystals were grown by a modified vertical Bridgman method for 1.5-1.6μm laser application. Fixed the ratio of at 1:9, (Er<sub>x</sub>Yb<sub>y</sub>Bi1<sub>-x-y</sub>)<sub>4</sub>Si<sub>3</sub>O<sub>12</sub> with 2mol%(x=0.002, y=0.018), 3mol%(x=0.003, y=0.027) 4mol%(x=0.004, y=0.036) obtained. Their transmittance was about 80%. The absorption spectrum shows that Er:Yb: BSO have...
The magnetic van der Waals crystals (MnX2Te4)m(X2Te3)n (X = Sb, Bi) have drawn significant attention due to their rich topological properties and the tenability by external field. In this work, we report on discovery of superconductivity in insulator candidate MnSb4Te7 (m 1, n 1) via application high pressure. antiferromagnetic ordering is robust pressure until 8 GPa then fully suppressed. carrier type converts from hole- electron-type accompanied with structural phase transition at around...