Hu Li

ORCID: 0000-0001-8606-2103
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About
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Research Areas
  • Plasma Diagnostics and Applications
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Metal and Thin Film Mechanics
  • Chalcogenide Semiconductor Thin Films
  • Diamond and Carbon-based Materials Research
  • Ion-surface interactions and analysis
  • Advanced Sensor and Energy Harvesting Materials
  • Quantum Dots Synthesis And Properties
  • Gas Sensing Nanomaterials and Sensors
  • Perovskite Materials and Applications
  • Thin-Film Transistor Technologies
  • Conducting polymers and applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Bone Tissue Engineering Materials
  • Advanced Memory and Neural Computing
  • Electrospun Nanofibers in Biomedical Applications
  • Advancements in Photolithography Techniques
  • Ga2O3 and related materials
  • Supercapacitor Materials and Fabrication
  • solar cell performance optimization
  • Bauxite Residue and Utilization
  • Silk-based biomaterials and applications
  • Phase-change materials and chalcogenides
  • Planarian Biology and Electrostimulation

Tokyo Electron (Japan)
2019-2024

Electron Optica (United States)
2024

The First Hospital of Changsha
2024

Fujian Normal University
2021-2023

Chinese Academy of Sciences
2019

Beihang University
2019

Beijing Institute of Nanoenergy and Nanosystems
2019

University of Chinese Academy of Sciences
2019

Union Hospital
2018

Huazhong University of Science and Technology
2015-2018

Abstract Triboelectric nanogenerators (TENGs) are a promising technology to convert mechanical energy electrical based on coupled triboelectrification and electrostatic induction. With the rapid development of functional materials manufacturing techniques, wearable implantable TENGs have evolved into playing important roles in clinic daily life from vitro vivo. These flexible light membrane‐like devices potential be new power supply or sensor element, meet special requirements for portable...

10.1002/adfm.201808820 article EN Advanced Functional Materials 2019-02-27

Abstract Antimony chalcogenides (Sb 2 (S x Se 1− ) 3 , 0 < 1) have recently gained popularity due to their excellent photoelectric properties. As a newcomer thin‐film solar cells, the quality of as‐prepared absorb layer remains most difficult challenge, owing its distinct crystal structure. Here, solvent‐assisted hydrothermal deposition (SHD) technique is developed for direct high‐quality Sb (S,Se) films; it realized that addition ethanol can regulate reaction kinetics by regulating...

10.1002/aenm.202300391 article EN Advanced Energy Materials 2023-04-09

Abstract In this work, a nanogenerator‐controlled drug delivery system (DDS) for use in cancer therapy is successfully established. A new magnet triboelectric nanogenerator (MTENG) fabricated that can guarantee the contact and detach cycle between two friction layers effectively increase TENG output, up to 70 V after implantation. Using special structural design, without commonly used spacer, contacting‐mode MTENG ensure high consistent electricity output encapsulation Doxorubicin‐(DOX‐)...

10.1002/adfm.201808640 article EN Advanced Functional Materials 2019-01-28

Abstract Bioelectricity plays a vital role in living organisms. Although electrical stimulation is introduced the field of bone regeneration, concept dose–response relationship between surface potential and osteogenesis not thoroughly studied. To optimize osteogenic properties different potentials, flexible piezoelectric membrane, poly(vinylidene fluoridetrifluoroethylene) [P(VDF‐TrFE)], fabricated by annealing treatment to control its β phases. The coefficients ( d 33 ) membranes can be...

10.1002/adhm.201701466 article EN Advanced Healthcare Materials 2018-04-20

Abstract Schottky and Ohmic contacts–based electronics play an important role in highly sensitive detection of biomolecules neural electric impulses, respectively. The reversible conversion between these two contacts appears especially for multifunctional sensing by just one biosensor. Here, barrier height (SBH) is successfully tuned triboelectric nanogenerator (TENG) the same device made to achieve contact contact. In (SOR) biosensor, detections biomolecule (i.e., neurotransmitter) signal...

10.1002/adfm.201907999 article EN Advanced Functional Materials 2019-11-28

Diabetic wound infections caused by the multiplication of infectious pathogens and their antibiotic resistance. Wound infection evident bacterial colonization other factors, such as virulence host immune factors. In this context, we need discover appropriate treatment effective antibiotics for control. Considering this, synthesized catechin-loaded polyvinyl alcohol/Chitosan (PVA/CS) based nanofiber multifunctional healing. The physicochemical biological properties fabricated nanofiber, were...

10.1016/j.heliyon.2024.e26940 article EN cc-by-nc-nd Heliyon 2024-02-28

Abstract Microscopic structural changes on Ti surfaces under low-energy (≤30 eV), perpendicular hydrogen ion (H + , H 2 ) irradiation were investigated using molecular dynamics simulations and topological data analysis. Under irradiation, retention peaked at 5–7 eV, while decreased monotonically with increasing energy. Detailed analysis for revealed that the ratio of two atoms compsing molecule followed a similar trend. Persistence diagrams showed additional ring structures formed by...

10.35848/1347-4065/adc8af article EN Japanese Journal of Applied Physics 2025-04-03

Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH3) or methanol (CH3OH) plasmas have been examined mass-selected ion beam experiments with in-situ surface analyses. It has suggested earlier studies that magnetic materials, i.e., Fe, Ni, Co, their alloys, such is mostly due to physical sputtering etch selectivity the process arises from resistance (i.e., low-sputtering yield) hard mask...

10.1116/1.4919925 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2015-05-06

Abstract Sb 2 S 3 is rapidly developed as light absorber material for solar cells due to its excellent photoelectric properties. However, the use of organic hole transport layer Spiro‐OMeTAD and gold (Au) in imposes serious problems stability cost. In this work, low‐cost molybdenum (Mo) prepared by magnetron sputtering demonstrated serve a back electrode superstrate structured first time. And multifunctional Se inserted between /Mo interface evaporation, which plays vital roles as: i) soft...

10.1002/advs.202303414 article EN cc-by Advanced Science 2023-09-05

Sputtering yields and surface chemical compositions of tin-doped indium oxide (or tin oxide, ITO) by CH+, CH3+, inert-gas ion (He+, Ne+, Ar+) incidence have been obtained experimentally with the use a mass-selected beam system in-situ x-ray photoelectron spectroscopy. It has found that etching ITO is chemically enhanced energetic hydrocarbon (CHx+) ions. At high incident energy incidence, it appears carbon ions predominantly reduce (In) sputtering CH+ CH3+ are to be essentially equal. lower...

10.1116/1.4927125 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2015-07-23

Mechanisms of zinc oxide (ZnO) etching by hydrocarbon plasmas were investigated both experimentally and theoretically with the use a mass-selected ion beam system first-principle quantum mechanical (QM) simulation based on density functional theory. The experiments have shown that sputtering yield ZnO increases pretreatment film energetic hydrogen (H) injections prior to heavy bombardment, suggesting chemically enhanced is closely related storage and/or formation damage in layer injections....

10.1116/1.4982715 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2017-05-11

The rate of etching tin-doped indium oxide (ITO) and the effects a hydrogen-induced modified layer on cyclic, multistep thin-layer were investigated. It was found that ITO cyclic is possible by precisely controlling layer. Highly selective ITO/SiO2 also investigated, it suggested surface adsorption Si can control etch rates SiO2, resulting in an almost infinite selectivity for over SiO2 improved profile controllability.

10.7567/jjap.57.06jb02 article EN Japanese Journal of Applied Physics 2018-05-22

Plasma enhanced chemical vapor deposition (PECVD) of silicon oxide (SiO2) using tetraethoxysilane (TEOS) was investigated theoretically by developing an unprecedented plasma chemistry model in TEOS/O2/Ar/He gas mixture. In the phase reactions, a TEOS molecule is decomposed electron impact reaction and/or chemically oxidative reaction, forming intermediate fragments, i.e., complexes. this study, we assume that SiO main precursor contributes to SiO2 film growth under particular process or...

10.7567/1347-4065/ab163d article EN Japanese Journal of Applied Physics 2019-05-30

The mechanisms of plasma-enhanced chemical vapor deposition using tetraethoxysilane (TEOS)-based plasma were investigated by monitoring the via experimental and computational approaches a quadrupole mass spectrometer/residual gas analyzer coupled plasma-gas flow simulation. For measurements, was generated from TEOS/inert mixture, that is, Ar/TEOS or He/TEOS. results showed larger number TEOS fragments (i.e., silicon complex species) in He/TEOS than plasma. Plasma simulation has higher...

10.1116/6.0002409 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2023-03-01

Recently GeSe has developed as a promising light harvesting material by enjoying to its optical and electrical features well earth-abundant low-toxic constituent elements. Nevertheless, the power conversion efficiency of GeSe-based solar cells yet lags far behind Shockley-Queisser limit. In this work, we systematically designed, simulated analyzed highly efficient thin-film SCAPS-1D. The influence thickness defect density harvest material, GeSe/CdS interface density, electron transport layer...

10.1016/j.heliyon.2023.e18776 article EN cc-by-nc-nd Heliyon 2023-07-28

The etch rate of tin-doped indium oxide (or tin oxide, ITO) and the effects a hydrogen-damaged layer caused by H2/Ar plasma were investigated using several surface analysis techniques. ITO strongly depended on flow ratio. was reduced hydrogen injection generated an In-rich (hydrogen-induced damage) surface. Because this had higher sputtering yield, enhanced rate. Thus, etching in is determined balance between formation damaged H ion irradiation Ar (relatively heavy inert gas) ions.

10.7567/jjap.56.06hd02 article EN Japanese Journal of Applied Physics 2017-05-22

Etching yields of amorphous carbon (a-C) have been determined for Ar+, Ne+, F+, CF+, and CF3+ ion irradiation as functions incident energy in the range from 300 to 2,000 eV. Amorphous is often used a hard mask material reactive etching (RIE) Si-based materials its durability against chemically primary importance. In this study, experiments on ion-beam a-C films were performed with mass-selected beam system, which irradiated sample surface single species at specified under ultra high vacuum...

10.7567/jjap.56.06hb09 article EN Japanese Journal of Applied Physics 2017-05-31

Abstract In reactive ion etching (RIE) of ZnO by methane-based plasmas, the predominant ion–surface interactions are considered to occur through small hydrocarbon ions such as CH + and 3 . this study, sputtering yields etched incident , He Ne Ar have been obtained functions energy with use a mass-selected beam system. Modification chemical compositions surfaces after bombardment has also examined an in-situ X-ray photoelectron spectroscopy (XPS) It found that is chemically enhanced,...

10.7567/jjap.55.021202 article EN Japanese Journal of Applied Physics 2016-01-08

Reactions between a precursor-absorbed SiO2 surface and energetic ion species, i.e. Ar+ or O+ ions, in plasma enhanced atomic layer deposition (PEALD) process were investigated using an situ X-ray photoelectron spectrometer system molecular dynamics (MD) simulation. Both the experiment simulation results showed that N and/or C atoms originating from precursor molecules remained on as amorphous carbon cyanide after 50 eV bombardment. The precursor-originated well film removed by incident ions...

10.35848/1347-4065/ab8681 article EN Japanese Journal of Applied Physics 2020-04-03

It is known that the etching yield (i.e., sputtering yield) of tin-doped indium oxide (ITO) by hydrocarbon ions (CHx+) higher than its corresponding physical [H. Li et al., J. Vac. Sci. Technol. A 33, 060606 (2015)]. In this study, effects hydrogen in incident ion beam on ITO have been examined experimentally and theoretically with use a mass-selected system first-principles quantum mechanical (QM) simulation. As case ZnO 35, 05C303 (2017)], experiments shown chemically inert Ne increases...

10.7567/jjap.57.06jc05 article EN Japanese Journal of Applied Physics 2018-05-29

Mechanisms of dry etching resistance Ta masks, which are widely used for magnetic random access memory processes, have been investigated a better understanding their faceting characteristics. In magnetic-material processes by CO/NH3 or CH3OH plasmas, CO+ ion is considered as one the most dominant species irradiating substrate surface. An earlier study Li et al. [J. Vac. Sci. Technol. A 33, 040602 (2015)] has shown that sputtering yield irradiation depends strongly on angle and level surface...

10.1116/1.4930242 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2015-09-01

Reactions for dissociative ionization and neutral dissociation collisions between an electron a tetraethoxysilane [Si(OC2H5)4, TEOS] molecule are reported, cross sections calculated by applying the classical Rice–Ramsperger–Kassel theory. Detailed collision section set of TEOS vapor, including 18 20 sections, is constructed. Electron transport coefficients, such as mean-arrival-time drift velocity, bulk longitudinal diffusion coefficient, rate coefficients both elastic inelastic in vapor...

10.7567/1347-4065/ab215c article EN Japanese Journal of Applied Physics 2019-05-13
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