A5013749664- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
- Plasma Diagnostics and Applications
- Silicon Nanostructures and Photoluminescence
- Advanced Battery Materials and Technologies
- Advancements in Battery Materials
- Bone Tissue Engineering Materials
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Nuclear physics research studies
- ZnO doping and properties
- Surface Modification and Superhydrophobicity
- Advanced Battery Technologies Research
- Electron and X-Ray Spectroscopy Techniques
- DNA and Nucleic Acid Chemistry
- Bacterial Genetics and Biotechnology
- Thin-Film Transistor Technologies
- High-pressure geophysics and materials
- Nuclear Physics and Applications
- Laser-induced spectroscopy and plasma
- Advanced Surface Polishing Techniques
- Advanced Materials Characterization Techniques
Osaka University
2016-2025
The University of Tokyo
1998-2025
Miyagi Prefecture Sendai Higashi High School
2024
Nagasaki University
2016-2023
Research Institute for Environmental Sciences and Public Health of Iwate Prefecture
2022
Karlsruhe Institute of Technology
2020-2021
National Institute of Advanced Industrial Science and Technology
2018
Carbon180
2018
Niigata University
2014
Musashino University
2012
Interface structure between Li and garnet-type Li6.5La3Zr1.5Ta0.5O12 (LLZT) solid electrolyte was investigated by means of electrochemical impedance spectroscopy (EIS) on symmetric cells | LLZT Li. Charge transfer resistance (RCT) using pellets with various roughness. RCT activation energy (Ea) obtained the flat interface is as high 746 Ω cm2 0.51 eV at 25°C, respectively, indicating that charge reaction (grit number: #8000) a kinetically slow process, which may suppress rate capability all...
Abstract This article discusses key elementary surface-reaction processes in state-of-the-art plasma etching and deposition relevant to nanoelectronic device fabrication presents a concise guide the forefront of research on plasma-enhanced atomic layer (PE-ALE) (PE-ALD). As critical dimensions semiconductor devices approach scale, atomic-level precision is required processing. The development advanced with such accuracy necessitates an in-depth understanding surface reaction mechanisms. With...
Surface etching and fluorination of yttria (Y2O3) by energetic fluorine (F) ions radicals were studied with mass-selected mono-energetic ion beams in an energy range 500–3000 eV xenon difluoride (XeF2) gas exposure. The yields Y2O3 evaluated this found to be lower than those silicon dioxide (SiO2). It was also that, when the incident sufficiently low, a small percentage near its surface converted yttrium trifluoride (YF3), rather oxyfluoride. However, as increased, fraction oxyfluoride...
Room-temperature fabrication of Schottky diodes was demonstrated for p-type boron-doped diamond. This method’s key technique is selective modification surface termination from monohydride into oxygen groups using vacuum ultraviolet light irradiation in oxygen. The Au contacts, formed on the hydrogen-terminated surface, maintained Ohmic properties after this oxidation. contacts then deposited oxidized imparting properties. lateral-type comprising and showed blocking voltage higher than 1 kV...
Hydrogen in hydrofluorocarbon plasmas plays an important role silicon nitride (Si3N4) reactive ion etching. This study focuses on the elementary reactions of energetic CHF2+ and CH2F+ ions with Si3N4 surfaces. In experiments, surfaces were irradiated by monoenergetic (500–1500 eV) beams as well hydrogen-free CF2+ CF+ generated a mass-selected beam system their etching yields surface properties examined. It has been found that, when takes place, rates ions, i.e., CH2F+, are higher than those...
The gamma strength function and level density of ${1}^{\ensuremath{-}}$ states in $^{96}\mathrm{Mo}$ have been extracted from a high-resolution study the ($\stackrel{\ensuremath{\rightarrow}}{p}$, ${\stackrel{\ensuremath{\rightarrow}}{p}}^{\ensuremath{'}}$) reaction at 295 MeV extreme forward angles. By comparison with compound nucleus $\ensuremath{\gamma}$ decay experiments, this allows test generalized Brink-Axel hypothesis energy region pygmy dipole resonance. is commonly assumed...
In reactive-ion etching (RIE) of silicon oxide (SiO 2 ) or nitride (SiN) by fluorocarbon (FC) hydrofluorocarbon (HFC) plasmas, fluorinated carbon layers may be formed on the etched surfaces and affect their rates. this study, properties SiO SiN FC HFC plasmas are examined in light formation mechanism such molecular dynamics (MD) simulation. Furthermore, electronegativity effect fluorine (F) is taken into account interatomic potential functions for C–F Si–F bonds MD simulations here show...
Schematic representation of Li growth during DC polarization experiments in the investigated garnet-type metal oxides.
We have fabricated high-performance ultraviolet (UV) detectors with high-quality undoped and B-doped homoepitaxial diamond layers which were sequentially grown on a high-pressure/high-temperature-synthesized (HPHT) type-Ib (100) substrate by means of high-power microwave-plasma chemical vapor deposition method. The detector performance measured had large quantum efficiencies due to an effective built-in current amplification function, fast temporal responses, high UV/visible sensing ratios...
Li-stuffed garnet-type solid Li-ion electrolytes have been considered as a promising candidate for all-solid-state Li batteries. In this work, alkaline earth metal-doped electrolytes, Li6.5La2.5A0.5TaZrO12 (A = Ca, Sr, Ba) were prepared by conventional solid-state sintering (CSS) and spark plasma (SPS) methods. The effect of methods on the structural electrochemical properties was investigated powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), impedance spectroscopy (EIS)....
Multiple hydrophobic patches on the surfaces of SMAD2 and SMAD3 mediate their interactions with cofactors.
Chemical stability of garnet-type lithium ion conductors is one the critical issues in their application all-solid-state batteries. Here, we conducted quantitative analysis impurity layers on solid electrolytes, Li6.5La3–xAExZr1.5–xTa0.5+xO12 (x = 0 and 0.1; AE Ca, Sr, Ba), by means X-ray photoelectron spectroscopy (XPS) electrochemical methods. Two complimentary XPS techniques were employed: (i) background analyses Tougaard's method (ii) relative intensity La 3d/La 4d spectra to determine...
RNA polymerase II (RNAPII) transcribes DNA wrapped in the nucleosome by stepwise pausing, especially at nucleosomal superhelical locations -5 and -1 [SHL(-5) SHL(-1), respectively]. In present study, we performed cryo-electron microscopy analyses of RNAPII-nucleosome complexes paused a major pausing site, SHL(-1). We determined two previously undetected structures, which transcribed behind RNAPII is sharply kinked exit tunnel rewrapped around histones front looping. This kink shifts...
Abstract Etching yields of sputter-deposited aluminum oxide (Al 2 O 3 ) by mono-energetic fluorine (F + ), chlorine (Cl and argon (Ar ion beams were evaluated as functions the incident energy in an range 100 to 2,000 eV. The results showed that etching Al Cl Ar ions are higher than those F over examined this study. Ex situ X-ray photoelectron spectroscopy confirmed formation some fluoride (AlF on surface exposed energetic beams. Inconel , also similarly found be much under corresponding...
Etching characteristics of tungsten (W), silicide (W3Si2), and oxide (WO3) by energetic trifluorocarbon (CF3+) argon (Ar+) ion irradiation were examined with the use mass-selected mono-energetic beams in an energy range between 500 4000 eV. It is found that etching yield W CF3+ notably higher than Ar+ when their energies are same sufficiently high, probably because formation volatile fluoride (WFx) species case irradiation. Similarly, WO3 also to be much In contrast, yields W3Si2 similar. On...
We have investigated transport properties of carriers excited in high-quality homoepitaxial diamond (100) films by 5.6eV photons or 15keV electrons. The single-crystalline were homoepitaxially grown on type-Ib substrates at a rate 2.5μm∕h high-power microwave-plasma chemical-vapor-deposition (MPCVD). In cathodoluminescence (CL) measurements, strong free-exciton recombination emissions observed room temperature from the almost whole specimen surface, indicating substantially high quality. It...