A5064712045- Plasma Diagnostics and Applications
- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- Laser-induced spectroscopy and plasma
- GaN-based semiconductor devices and materials
- Electronic and Structural Properties of Oxides
Samsung (South Korea)
2023-2025
Optical emission spectroscopy was used as a real-time monitor of the atomic layer etching (ALE) Si in an Ar inductively coupled plasma (ICP). Pulses Cl2 gas were repetitively injected into continuous flow Ar, followed by ignition ICP and application substrate rf bias power (either or rapidly modulated). emissions from Si, SiCl, SiCl2, Cl monitored along line parallel close to surface function time during period, well without power. From analysis dependencies decays modulated periods, it is...
Etching characteristics of tungsten (W), silicide (W3Si2), and oxide (WO3) by energetic trifluorocarbon (CF3+) argon (Ar+) ion irradiation were examined with the use mass-selected mono-energetic beams in an energy range between 500 4000 eV. It is found that etching yield W CF3+ notably higher than Ar+ when their energies are same sufficiently high, probably because formation volatile fluoride (WFx) species case irradiation. Similarly, WO3 also to be much In contrast, yields W3Si2 similar. On...
Atomic layer etching of Si is reported in a radio frequency (RF) pulsed-power inductively coupled (ICP) plasma, with periodic injections HBr into continuous He/Ar carrier gas flow, sometimes trace added O2. Several pulsing schemes were investigated, injection simultaneous or alternating ICP power. The product removal step was induced by applying RF power to the substrate, sync Etching and dosing monitored optical emission spectroscopy. Little no chemically enhanced ion-assisted observed...
This work proposes the modeling for predicting etching process of silicon nitride films in phosphoric acid. The model is established based on Eley-Rideal surface reaction mechanism and validated by comparisons against experimental data. results indicate successful agreements between computational data measurements amount Si(OH) <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> concentration during Si...
This paper reports an experimental investigation of Cl2 versus HBr for plasma atomic layer etching silicon. An inductively coupled (ICP) source with a constant flow Ar carrier gases and or as dosing gas was used Si (100). Two modes were investigated: dosing, in which pulsed flows are partially dissociated the ICP no substrate bias, where is off during step. Following either mode, purge step up to 5 s followed by 1 period bias power, leading halogenated surface layer. Optical emission...