A5020586555- ZnO doping and properties
- Copper-based nanomaterials and applications
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
- Chalcogenide Semiconductor Thin Films
- Electronic and Structural Properties of Oxides
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
- Magnetic and transport properties of perovskites and related materials
- Transition Metal Oxide Nanomaterials
- Magnetic Properties of Alloys
- Semiconductor materials and interfaces
- Aluminum Alloys Composites Properties
- Metal and Thin Film Mechanics
- Magnetic properties of thin films
- Rare-earth and actinide compounds
- Aluminum Alloy Microstructure Properties
- Magnetic Properties and Applications
- Marine Biology and Environmental Chemistry
- Magnesium Oxide Properties and Applications
- TiO2 Photocatalysis and Solar Cells
- Advanced ceramic materials synthesis
- Thermodynamic and Structural Properties of Metals and Alloys
- Advanced Semiconductor Detectors and Materials
- Marine Ecology and Invasive Species
Indian Institute of Technology Gandhinagar
2016-2025
Max Planck Institute of Microstructure Physics
2014
Max Planck Institute for Intelligent Systems
2009-2010
Max Planck Society
2009-2010
National Metallurgical Laboratory
2006
This study addresses the variation in electrical properties a thickening Al-doped ZnO (AZO) film up to 348 nm and correlates this with its defect chemistry.
In this study, we investigate the stability and electronic properties of bulk, surface, interface structures between tin sulfide (SnS) zinc (ZnS) by using first-principles calculations high-throughput structure search methods. Our analysis reveals significant differences in these materials, with distinct bandgaps observed for SnS ZnS bulk surface configurations as well at their pristine interface. The SnS/ZnS exhibits a staggered (type-II) band alignment, which is favorable solar cell...
In order to know the threshold quantity of zinc interstitials that contributes an increase in carrier concentration Al-doped ZnO (AZO) films and their effect on overall microstructure optoelectronic properties these films, this work, Zn-rich-AZO thin are fabricated by adding excess (from a metallic target) during deposition RF magnetron sputtering then investigated using wide range experimental techniques. All found grow hexagonal wurtzite crystal structure with strong (002) orientation...
Hierarchical metal mesh structures are fabricated for use as transparent conductive electrodes in electrochromic devices with large-band transmittance switching. Electrochromic materials (WO3 and Ta:NiO) deposited by plasma sputtering on the characterized a custom-made electrochemical setup allowing in-situ photo-spectrometer measurement. Both films exhibit high transmittance, not only visible but also NIR spectrum. based WO3 cathode Ta:NiO anode combined hierarchical fabricated. The...
In this study, a qualitative relationship between the surface and bulk electronic states for Al-doped ZnO (AZO) thin films (thickness < 260 nm) is established. To end, AZO were deposited on soda lime glass substrates by varying substrate temperature (Ts) from 303 K to 673 in RF magnetron sputtering. All these are found have grown hexagonal wurtzite structure with strong (002) orientation of crystallites an average transmittance 84%–91% visible range. Room scanning tunneling...
A combinatorial approach of experiment and theory was used to investigate the defect induced bulk surface electrical properties SnS.
Real-time in situ spectroscopic ellipsometry and situ, angle-resolved x-ray photoelectron spectroscopy (AR-XPS) have been applied to establish the relationships between growth kinetics developing microstructure of ultrathin (<3 nm) oxide films grown on clean Al–1.12 at. % Mg alloy surfaces by thermal oxidation temperature range T=300–485 K. To this end, procedures for depth-resolved quantitative AR-XPS analysis ultrathin, multiple-element, and/or multiphase overgrowths binary were...