A5032315855- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Advanced Thermoelectric Materials and Devices
- Advanced Thermodynamics and Statistical Mechanics
- Gas Sensing Nanomaterials and Sensors
- Cancer therapeutics and mechanisms
- Magnetic Field Sensors Techniques
- Peptidase Inhibition and Analysis
- Acoustic Wave Resonator Technologies
- PARP inhibition in cancer therapy
- ZnO doping and properties
- Cholangiocarcinoma and Gallbladder Cancer Studies
- Optical properties and cooling technologies in crystalline materials
- Advanced biosensing and bioanalysis techniques
- Advanced Memory and Neural Computing
- Advanced Biosensing Techniques and Applications
- DNA Repair Mechanisms
- Advancements in Semiconductor Devices and Circuit Design
- Chalcogenide Semiconductor Thin Films
- Magnetic properties of thin films
Suranaree University of Technology
2019-2024
Chiang Mai University
2015
Gallbladder cancer (GBC) is a rare but the most malignant type of biliary tract tumor. It usually diagnosed at an advanced stage and conventional treatments are unsatisfactory. As proteasome inhibitor, bortezomib (BTZ) exhibits excellent antitumor ability in GBC. However, long-term treatment efficacy limited by its resistance, poor stability, high toxicity. Herein, BTZ-encapsulated pH-responsive copolymeric nanoparticles with estrone (ES-NP(BTZ; Ce6) ) for GBC-specific targeted therapy...
Abstract DNA molecules are subject to various lesions that can be detrimental the cells. damage response (DDR) pathways encompass a variety of mechanisms cells employ in damage. While DDR promotes genomic stability normal cells, it also protects cancer from lesions, particularly against exogenous DNA‐damaging agents. Therefore, exploited account for resistance chemotherapy and radiotherapy have potential targeted treatment. Apart poly (ADP‐ribose) polymerase (PARP) inhibitors used...
AbstractHfO2-based films prepared by the integration of sol-gel method and spin-coating procedure were used as study system to investigate influence La doping varying contents 20, 40, 50, 60 wt%. GIXRD, XANES, EXAFS measurements performed analyze phase formation, crystal structure, local structure films. The XANES data Hf L3-edge show no significant difference with respect an increase in content, indicating a considerable stability hafnium ion +4 oxidation state. Moreover, spectrum shows...
HfO2 and La-doped with 20, 40, 50, 60 mol% were deposited on silicon wafers by spin-coating technique. The crystallization process was annealed temperature at 600 °C. Then, characterization techniques of XRD, AFM, SEM, Full-field XRF imaging, XAS applied to reveal structural morphology, local structure, grain, distribution, etc. This study aims investigate the effect doping La into system surface formation, microstructure, dielectric properties. According results, RMS roughness, grain size...
In this article, the effect of lanthanum-doped HfO2 structure is investigated in order to verify ferroelectric property as a candidate for next generation FeRAM. The xLa-doped thin films with x equals 0.0, 0.2, 0.4, 0.5, 0.6, and 0.8 were prepared by sol–gel method. Hafnium chloride lanthanum employed starting materials which initially dissolved ethanol ethylene glycol, respectively. Diethanolamine was applied stabilizer. ratio between moles metals, solvent, stabilizer varied obtain gel it...
Magnesium oxide (MgO) thin films are the most currently used as magnetic barrier shields in Tunneling Magnetoresistance (TMR) sensors. In this work, MgO (50 nm) film on silicon substrates were annealed at different temperatures (250, 350, and 450 °C) atmospheres (Argon, Nitrogen, air). The structure, morphology, chemical composition, thickness investigated by using a focused-ion beam scanning electron microscope, atomic force microscopy, X-ray photoelectron spectroscopy techniques....