Abstract This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields performance uniformity tunability. Like graphene, Transition Metal Dichalcogenides (TMDCs) are prone upscaling challenges limiting They challenging grow uniformly on substrates transfer alternative while they often lack in electrical uniformity. scalable ALD of...

We present design concepts for optical modulators without using any equalization or bespoke fabrication techniques. The demonstrated silicon photonics transmitter can operate at 100 Gbps OOK, while the power efficiency of driver is 2.03 pJ/bit.

Abstract The widening application of advanced digital infrastructure requires the development communications technologies with increased data transmission rates. However, ensuring that this can be achieved in an energy-efficient way is challenging. Here we report integrated complementary metal–oxide–semiconductor/silicon-photonics-based transmitter which a switching current applied to passive-equalization-network-guided silicon Mach–Zehnder modulator, rather than driving standard modulator...

Two-dimensional (2D) transition-metal dichalcogenides have shown great potential for energy storage applications owing to their interlayer spacing, large surface area-to-volume ratio, superior electrical properties, and chemical compatibility. Further, increasing the area of such materials can lead enhanced electrical, chemical, optical response generation applications. Vertical silicon nanowires (SiNWs), also known as black-Si, are an ideal substrate 2D material growth produce high...

Abstract Unlike MoS 2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS films using this approach more challenging. Here, we report a method growth of that results in continuous over centimetre scale. The is based on the thermolysis spin coated ammonium tetrathiotungstate ((NH 4 ) by two-step high temperature annealing without additional sulphurization. This facile scalable...

The development of the next generation optical phase change technologies for integrated photonic and free-space platforms relies on availability materials that can be switched repeatedly over large volumes with low losses. In recent years, antimony-based chalcogenide phase-change material Sb 2 Se 3 has been identified as particularly promising a number applications owing to good transparency in near-infrared part spectrum high refractive index close silicon. crystallization temperature...

This article analysed and optimised horizontal Silicon insulator capacitor (H-SISCAP) phase shifter structures with thickness t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</sub> up to 40 nm. The has an effective capacitance (Ceff) around 0.5 fF/μm a change efficiency 1.8 V·cm, of which the balance between is comparable silicon rib waveguide based depletion type shifters. Mach-Zehnder interferometer (MZI) modulators 200 μm long H-SISCAP...

We report on the source-drain contact improvement in zinc oxide thin-film transistors (ZnO-TFTs) using Al-doped ZnO (AZO) intermediary layers by a thermal atomic layer deposition (ALD) process. This plasma-free method enables optimization of AZO ratio (Al:Zn) to improve resistance. In this study, Al:Zn is modulated between 1.0-5.0% ALD and confirmed energy-dispersive X-ray spectroscopy. contacts are measured electrically both linear transfer-length (TLM) structures integrated at regions...

As leading edge lithography is moving to 2x-nm design rules, control complements resolution as one of the main drivers and enablers meet very stringent overlay, focus CD requirements. part ASML's holistic roadmap, ASML developing several application-specific optimization applications, such LithoTuner Pattern Matcher BaseLiner. These applications are all explicitly designed improve scanner process window (overlay, focus, CDU matching). All these have in common that they require vast amounts...

In this article, an efficient spot-size converter (SSC) for low-loss optical mode transition between large and small waveguides based upon a buried three-dimensional (3D) taper is demonstrated. The SCC can pave the way scalable, coupling on-chip of different sizes with external components such as fibers III-V active components, it be key element in solving challenges surrounding economic high volume packaging assembly photonic integrated circuits. Through use bespoke fabrication process,...

Data centers continue to require interconnects with higher bandwidth densities and energy efficiencies. Silicon photonics (SiP)-based solutions have gained interest for implementing low-cost power efficient 100+Gb/s/A optical transceivers. While microring modulators (MRMs) small footprints high electro-optical (EOBW), they suffer from an inherent tradeoff between phase efficiency, sensitivity process temperature variations, non-linear electro-optic characteristics [1 – 2]. Travelling-wave...

This article presents a 100-Gb/s four-level pulse-amplitude modulation (PAM4) optical transmitter system implemented in 3-D-integrated silicon photonics-CMOS platform. The photonics chip includes push–pull segmented Mach–Zehnder modulator (MZM) structure using highly capacitive (415 fF–1.1 pF), yet optically efficient ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\pi }L= 0.8\,\,\text{V}\cdot $...

As leading edge lithography moves to 22-nm design rules, low k1 technologies like double patterning are the new resolution enablers, and system control setup drivers meet remarkably tight process requirements. The way of thinking executing scanners is changing in four ways. First, unusually tolerances call for very dense sampling [1], which effect means measurements at high throughput combined with order modeling corrections compensate wafer spatial fingerprint. Second, complex interactions...

Recent breakthroughs in photonics-based quantum, neuromorphic and analogue processing have pointed out the need for new schemes fully programmable nanophotonic devices. Universal optical elements based on interferometer meshes are underpinning many of these technologies, however this is achieved at cost an overall footprint that very large compared to limited chip real estate, restricting scalability approach. Here, we consider ultracompact platform low-loss using complex transmission matrix...

We investigate the performance boundary of integrated CMOS silicon photonics transmitters by using optical equalisation techniques. Without any off-line DSP techniques at receiver side, experimental results demonstrate 182Gbps OOK and 308Gbps PAM-4 transmissions with energy efficiency including driver, better than 1pJ/bit.

Abstract This study experimentally investigates electrical characteristics and degradation phenomena in polycrystalline zinc oxide thin-film transistors (ZnO-TFTs). ZnO-TFTs with Al 2 O 3 gate dielectric, Al-doped ZnO (AZO) source–drain contacts, AZO electrode are fabricated using remote plasma-enhanced atomic layer deposition at a maximum process temperature of 190 °C. We employ positive bias stress (PBS), negative (NBS), endurance cycling measurements to evaluate the ZnO-TFT performance...

Holistic lithography is needed to cope with decreasing process windows and built on three pillars: Scanner Tuning, Computational Lithography Metrology & Control. The relative importance of stability the overall manufacturing latitude increases. Overlay focus control applications are important elements in improving lithographic process. rely advanced algorithms fast precise metrology. To address metrology needs at 32 nm node beyond, an optical scatterometry tool was developed capable...

Abstract A new design philosophy for integrated CMOS-silicon photonic transmitters is introduced where switching current applied to the silicon Mach Zehnder Modulator (MZM) rather than operating in traditional voltage driving mode. With this approach total electrical energy can be selectively distributed different frequency components by choosing appropriate inductance and near-end termination impedance values. 112G baud (112Gb/s OOK 224Gb/s PAM-4) transmission has been experimentally...

Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator (SOI) substrate in back-end process, whereas monolithic integration by direct epitaxy could benefit from front-end process where materials are grown prior to the fabrication of passive optical circuits. Here we demonstrate front-end-of-line (FEOL) processing and approach 220 nm (001) SOI wafers enable positioning dislocation-free GaAs layers lithographically defined cavities right top buried oxide...

Pattern defects and uninvited particles (residuals) probably appear on Mask Wafer in any manufacturing process of integrated circuits (ICs) impact the final yield IC chips. To ensure a high yield, defect inspection has been broadly adopted for monitoring many processes volume (HVM) shortening development cycle-times critical R&D. In HVM optical tools have played major role, R&D e-beam role. For 7nm technology node beyond, minimum size killer are going to be invisible tools, too slow capture...

Requirements for on-product overlay, focus and CD uniformity continue to tighten in order support the demands of 10nm 7nm nodes. This results need simultaneously accurate, robust dense metrology data as input closed-loop control solutions thereby enabling wafer-level high corrections. In addition use opaque materials stringent design rules drive expansion available measurement wavelengths target space. Diffraction based optical has been established leading methodology integrated well...

EUV lithography has been adopted in most advanced semiconductor manufacture fabs, enabling the next step design rule scaling. With this progress, minimum critical defect size become smaller and harder to detect. Defect inspection equipment suppliers must therefore parallel provide a significant up sensitivity at reasonable throughput. Optical tools are facing an unprecedented challenge because defects less than 10nm not optically visible. As alternative, manufacturers have turned toward...

Top-down method was used to fabricate zinc oxide (ZnO) nano wire field effect transistor (NWFET) biosensor. The nanosensor measure the electrical characteristics of lysozyme (LYSO) and bovine serum albumin (BSA) protein solutions in phosphate buffered saline (PBS). LYSO BSA proteins are oppositely charged at measurement pH 7.4. Subthreshold voltage shift 340 mV 700 due surface charge on device channel is obtained for respectively. A NWFET sensitivity 72 % achieved while resulted a 98%.