A5084275753- Graphene research and applications
- Carbon Nanotubes in Composites
- Thermal properties of materials
- Ion-surface interactions and analysis
- Graphene and Nanomaterials Applications
- Advancements in Battery Materials
- Material Properties and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Diamond and Carbon-based Materials Research
- Polymer Nanocomposite Synthesis and Irradiation
- Advanced Energy Technologies and Civil Engineering Innovations
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Carbon and Quantum Dots Applications
Belarusian State University
2015-2023
In this article we present the results of micro-Raman studies graphene grown on copper foil surface by atmospheric pressure CVD using decane as precursor, nitrogen carrier gas with zero flow hydrogen. Analysis Raman spectroscopy data showed that film contains spots single layer thick graphene. We observed significant blue shift 2D and G bands positions for mono-atomically foil. Following literature relate to strain induced presence substrate. Moreover, changes in defectiveness layers after...
Atmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various spectra parameters were found to depend on the pressure and substrate material. The results are interpreted in terms atmospheric adsorption leading a change charge carrier density effect electronic phonon properties graphene. It that molecules from atmosphere onto doped with nitrogen (electron doping) compensates for electron charge. Furthermore, atmosphere-induced drastically...
Using Raman and photoemission spectroscopy, we probe the atmospheric adsorption on pristine nitrogen p -doped graphene supported by SiO2/Si. Laser annealing in vacuum led to a pronounced change spectra parameters, corresponding decrease hole density due adsorbate removal from sample surface. We found that shift inversely correlates with degree of initial doping, thus less -type doping takes place higher charge carriers same sign. The amount required for absence was be noad = (3.87 ± 0.31) ×...
This study is dedicated to the common problem of how choose a suitable substrate for ion irradiation two-dimensional materials in order achieve specific roles certain defect formation mechanisms. The estimations include Monte Carlo simulations He, Ar, Xe, C, N and Si ions, performed incident energy range from 100 eV 250 MeV. Cu, SiO 2 , SiC Al O 3 substrates were analyzed. considered substrate-related mechanisms are sputtering, recoil atoms reaching interface with non-zero energy, generation...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 10 11 cm -2 ) and characterized Raman spectroscopy.The defectiveness pristine graphene found to be dominated grain boundaries while after irradiation it determined both vacancies.Respectively, average inter-defect distance decreased from ~ 24 13 nm.Calculations showed that the ion resulted in a decrease charge carrier mobility 4.0 × 3 1.3•10 2 /V s.The results present study can used control structure,...
Introduction. Studies of the substrate influence on graphene properties are relevant due to high sensitivity this two-dimensional material smallest effects. At same time, studies dedicated separation direct and residual synthesis effects not described in literature sufficient detail. Materials methods. This paper presents results a study structural as-grown transferred copper substrates by Raman spectroscopy atomic force microscopy. Results discussion. Using spectroscopy, we found that...