Maximilian C. Schuchter

ORCID: 0000-0001-8921-4889
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About
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Research Areas
  • Semiconductor Lasers and Optical Devices
  • Photonic and Optical Devices
  • Advanced Fiber Laser Technologies
  • Advanced Semiconductor Detectors and Materials
  • Analytical Chemistry and Sensors
  • Spectroscopy Techniques in Biomedical and Chemical Research
  • Spectroscopy and Quantum Chemical Studies
  • Semiconductor Quantum Structures and Devices
  • Spectroscopy and Laser Applications
  • Advanced Chemical Physics Studies
  • Laser-Matter Interactions and Applications
  • Solid State Laser Technologies
  • Advanced Biosensing Techniques and Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Fiber Optic Sensors
  • Advanced Optical Sensing Technologies

Tampere University
2023-2024

ETH Zurich
2023-2024

<p dir="ltr">Semiconductor Saturable Absorber Mirrors (SESAMs) have revolutionized the ultrafast laser industry. While SESAMs are well-established in near-infrared regime, using GaAs-wafer epitaxy, there is an increasing interest for short-wave infrared (SWIR) which can be fabricated GaSb material system. Compared to GaAs-based SESAMs, nonlinear response of absorbers has been reported exhibit inherent and a different interplay between time fabrication process. Here we report new...

10.1364/opticaopen.28269377 preprint EN cc-by 2025-01-24

<p dir="ltr">Semiconductor Saturable Absorber Mirrors (SESAMs) have revolutionized the ultrafast laser industry. While SESAMs are well-established in near-infrared regime, using GaAs-wafer epitaxy, there is an increasing interest for short-wave infrared (SWIR) which can be fabricated GaSb material system. Compared to GaAs-based SESAMs, nonlinear response of absorbers has been reported exhibit inherent and a different interplay between time fabrication process. Here we report new...

10.1364/opticaopen.28269377.v1 preprint EN cc-by 2025-01-24

Dual-comb lasers are a new class of ultrafast that enable fast, accurate and sensitive measurements without any mechanical delay lines. Here, we demonstrate 2-µm laser called MIXSEL (Modelocked Integrated eXternal-cavity Surface Emitting Laser), based on an optically pumped passively modelocked semiconductor thin disk laser. Using III-V molecular beam epitaxy, achieve center wavelength in the shortwave infrared (SWIR) range by integrating InGaSb quantum well gain saturable absorber layers...

10.1364/oe.503035 article EN cc-by Optics Express 2023-11-30

We introduce the first diode-pumped GaSb-based semiconductor membrane laser with a continuous wave (cw) output power of 1.5 W at center wavelength <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.08~\mu \text{m}$ </tex-math></inline-formula> an optical-to-optical efficiency 11.7 % and thermal resistance 0.74 K/W. It features broad tunability over 117 nm, achieved using 3-mm birefringent quartz crystal in...

10.1109/lpt.2024.3377261 article EN cc-by IEEE Photonics Technology Letters 2024-03-13

Attosecond noncollinear four-wave-mixing spectroscopy with one attosecond extreme ultraviolet (XUV) pulse and two few-cycle near-infrared (NIR) pulses was used to measure the autoionization decay lifetimes of inner valence electronic excitations in neon atoms. After a 43--48-eV XUV photon excites $2s$ electron into $2s2{p}^{6}\phantom{\rule{0.16em}{0ex}}(np)$ Rydberg series, broadband NIR couple $2s2{p}^{6}3p$ XUV-bright state neighboring $2s2{p}^{6}3s$ $2s2{p}^{6}3d$ XUV-dark states....

10.1103/physreva.107.033117 article EN Physical review. A/Physical review, A 2023-03-27

There is significant interest in developing high-power lasers with excellent beam quality and tunable wavelength the Short-Wave Infrared (SWIR) to mid-infrared range. Type-II Quantum Well (QW) VECSELs have been demonstrated GaAs material system. However, their true potential lies suppressing Auger recombination at wavelengths beyond 2.3 μm GaSb system where type-I QWs face increasing challenges. Therefore, our research focuses on investigating type-II QW configurations extend emission of...

10.1117/12.3002548 article EN 2024-03-12

Passively modelocked, optically pumped semiconductor disk lasers, commonly referred to as VECSELs or MIXSELs, offer a unique combination of wavelength versatility, wafer scalability, high beam quality, and substantial average output power. While V-shaped cavities are typically used for SESAM-modelocked VECSELs, MIXSELs utilize simplified straight cavity, integrating the saturable absorber into VECSEL chip. Here, we demonstrate dual-comb modelocked MIXSEL in Short-Wave Infrared (SWIR) regime,...

10.1117/12.3001874 article EN 2024-03-12

SESAMs (Semiconductor Saturable Absorber Mirrors) are crucial in ultrafast laser systems and have been extensively used the near-infrared region. Extending them to short-wave infrared (SWIR) regime is essential for many sensing spectroscopic applications. This investigation examines how wavelength, strain, barrier material affect SWIR SESAM performance. At 2 μm, with InGaSb quantum wells GaSb barriers demonstrate fast recovery times (⪅30 ps) due defect states confined wells. However, using...

10.1117/12.3002405 article EN 2024-03-12

10.1109/lpt.2024.3384170 article EN IEEE Photonics Technology Letters 2024-04-10

We present the first diode-pumped GaSb-based MECSEL, directly bonded onto a SiC heatspreader, operating at 2080 nm. A continuous-wave output power of 1.5 W and up-to-date lowest thermal resistance 0.74 K/W is achieved.

10.1364/cleo_si.2024.sth5c.5 article EN 2024-01-01

We present the first modelocked, backside-cooled InGaSb-MIXSEL operating at 2035 nm, producing fundamentally modelocked pulses of 1.5 ps with average output power up to 27 mW 3.9 GHz repetition rate.

10.1364/cleo_si.2023.sf3l.2 article EN 2023-01-01

Passively modelocked, optically pumped semiconductor disk lasers also referred to as VECSELs or MIXSELs combine the wavelength versatility and wafer scalability of semiconductors, together with a high beam quality vertical emitters good average output power [1], [2]. Typically, V-shaped cavity is used for SESAM-modelocked VECSELs. This simplified straight linear MIXSELs, which SESAM integrated into VECSEL chip.

10.1109/cleo/europe-eqec57999.2023.10232439 article EN 2023-06-26

In this invited talk we present several milestone results that highlight the abilities of our dual-comb MIXSEL technology in long-wavelength regime.

10.1364/assl.2023.atu4a.1 article EN Laser Congress 2020 (ASSL, LAC) 2023-01-01

Attosecond noncollinear four wave mixing spectroscopy with one attosecond extreme ultraviolet (XUV) pulse and two few-cycle near-infrared (NIR) pulses was used to measure the autoionization decay lifetimes of inner valence electronic excitations in neon atoms. After a 43-48 eV XUV photon excites 2s electron into 2s2p6[np] Rydberg series, broadband NIR couple 2s2p6[3p] XUV-bright state neighboring 2s2p6[3s] 2s2p6[3d] XUV-dark states. Controllable delays or both respect reveal temporal...

10.48550/arxiv.2212.14443 preprint EN other-oa arXiv (Cornell University) 2022-01-01
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