Scott Crittenden

ORCID: 0000-0001-8982-0184
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About
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Research Areas
  • Force Microscopy Techniques and Applications
  • Mechanical and Optical Resonators
  • Ga2O3 and related materials
  • Molecular Junctions and Nanostructures
  • Metal-Organic Frameworks: Synthesis and Applications
  • Machine Learning in Materials Science
  • Semiconductor materials and devices
  • Quantum Dots Synthesis And Properties
  • GaN-based semiconductor devices and materials
  • Conducting polymers and applications
  • Nanoplatforms for cancer theranostics
  • Microbial Fuel Cells and Bioremediation
  • ZnO doping and properties
  • Nanowire Synthesis and Applications
  • Topological Materials and Phenomena
  • Electronic and Structural Properties of Oxides
  • Surface and Thin Film Phenomena
  • Theoretical and Computational Physics
  • Quantum and electron transport phenomena
  • Electrostatics and Colloid Interactions
  • Electrochemical sensors and biosensors
  • 2D Materials and Applications
  • Supercapacitor Materials and Fabrication
  • Near-Field Optical Microscopy
  • Advanced Electron Microscopy Techniques and Applications

University of South Carolina
2011-2024

Savannah River National Laboratory
2011

University of South Carolina Aiken
2011

DEVCOM Army Research Laboratory
2005-2007

Purdue University West Lafayette
1999-2005

Numerous bacterial genera are known to respire anaerobically using macroscopic electrodes as electron acceptors. Typically, inexpensive graphite electrodes, which readily colonized, used monitor electrogenic metabolism for microbial fuel cell and bioelectronics studies. We compare current production by bacteria on gold coated with various alkanethiol self-assembled monolayers glassy carbon electrodes. Current is correlated chain length headgroup of the monolayer molecules expected. Relative...

10.1021/la061869j article EN Langmuir 2006-10-06

We present a method to detect, with enhanced sensitivity, target mass particle attached eccentrically microcantilever by measuring multiple three-dimensional modes in the vibration spectrum. Peaks spectrum reveal complex coupling between bending, torsional, and lateral motions detailed finite element models assist their interpretation. The sensitivities of torsional mode frequencies are an order magnitude greater, Q factors significantly higher, than that conventionally used fundamental...

10.1063/1.1759379 article EN Applied Physics Letters 2004-05-21

We systematically investigate higher harmonics in the vibration spectrum of scanning force microscope cantilevers operating attractive regime. show that (a) magnitudes higher-harmonic signals should be directly correlated to local van der Waals forces for systems without significant electrostatic interactions and (b) resonances are much sharper than fundamental harmonic. Consequently, unlike case tapping mode operation, contrast amplitudes over a scanned sample with small reflects changes...

10.1103/physrevb.72.235422 article EN Physical Review B 2005-12-21

The copper-based metal-organic framework (MOF) HKUST-1 adsorbs organic molecules into its pores. When loaded with electron-rich oligothiophenes, the resulting system reacts under heat to initiate oxidative polymerization without use of any other oxidant or catalyst. This reaction is not observed in non-redox-active MOF MIL-100(Al). We have characterized composites by optical and nanoscale microscopy, vibrational UV-vis spectroscopy, X-ray photoelectron N2 sorption analysis, thermogravimetric...

10.1021/acs.inorgchem.8b03465 article EN Inorganic Chemistry 2019-04-05

The force-constancy hypothesis states that the user of a force-feedback device maintains constant penetration force when stroking virtual surfaces in order to perceive their topography. was developed address real-world data perceptualization problem where perception surface topography distorted stiffness nonuniform. Two experiments were conducted. In Experiment I, we recorded depths probe tip while stroked two with equal height but different values. We found could be quantitatively modeled...

10.1145/1060581.1060584 article EN ACM Transactions on Applied Perception 2005-04-01

Electrical failure of carbon nanotubes was investigated by obtaining I(V) data with a voltage ramp from rope multiwalled nanotubes. Noncontact scanning force microscope images were obtained before and after each curve until electrical the tube resulted. Following this procedure, it possible to correlate defect on surface nanotube exact location failure.

10.1063/1.125501 article EN Applied Physics Letters 1999-12-20

We present a method to obtain capacitive forces and dielectric constants of ultra-thin films on metallic substrates using multifrequency non-contact atomic force microscopy with amplitude feedback in air. Capacitive are measured via cantilever oscillations induced at the second bending mode calculated by fitting an analytic expression for capacitance (Casuso et al 2007 Appl. Phys. Lett. 91 063111) experimental data. Dielectric self-assembled monolayers thiol molecules gold (2.0±0.1)...

10.1088/0957-4484/23/2/025707 article EN Nanotechnology 2011-12-14

An in situ metal-organic chemical vapor phase epitaxy is used to grow a complete AlGaN/GaN metal oxide semiconductor heterojunction field effect transistor (MOSHFET) structure, gated by gallium (Ga2O3) layer; we observed reduction the interfacial trap density compared its version wherein Ga2O3 was grown ex situ, after breaking vacuum, all else being same. A remarkable decrease charge for MOSHFET structures range of 70%–88% 10–30 nm layer thickness and improvements other electrical parameters...

10.1063/5.0193603 article EN Applied Physics Letters 2024-03-11

Silver (Ag) films of varying thickness were simultaneously deposited using physical vapor deposition (PVD) onto six infrared (IR) substrates (BaF(2), CaF(2), Ge, AMTIR, KRS-5, and ZnSe) in order to correlate the morphology film with optimal SEIRA response spectral band symmetry quality. Significant differences observed surface silver films, degree enhancement provided, appearance para-nitrobenzoic acid (PNBA) cast for each silver-coated substrate. These attributed substrate's chemical...

10.1366/10-06176 article EN Applied Spectroscopy 2011-02-22

We demonstrate the ability to measure Stern potential and Debye length in dilute ionic solution with atomic force microscopy. develop an analytic expression for second harmonic component of capacitive from linearized Poisson–Boltzmann equation. This allows us calibrate AFM tip and, further, obtain sample surfaces. In addition, measured is independent van der Waals double layer forces, thus providing a more accurate length.

10.1088/0957-4484/24/43/435701 article EN Nanotechnology 2013-09-27

Salts of the diazonium coupling agent p-phenylenebis(diazonium) form diazonium-terminated conjugated thin films on a variety conductive and nonconductive surfaces by spontaneous reaction with surface. The resulting diazonium-bearing surface can be reacted various organic inorganic nucleophiles to functionalized These have been characterized voltammetry, XPS, infrared Raman spectroscopy, atomic force microscopy. Substrates that conveniently quickly modified this process include ordinary...

10.1039/c8ra00792f article EN cc-by RSC Advances 2018-01-01

The growth of monoclinic phase‐pure gallium oxide (β‐Ga 2 O 3 ) layers by metal–organic chemical vapor deposition on c‐plane sapphire and aluminum nitride (AlN) templates using silicon‐oxygen bonding (SiO x as a phase stabilizer is reported. β‐Ga are grown triethylgallium, oxygen, silane for gallium, silicon precursors, respectively, at 700 °C, with without flow in the process. samples SiO stabilization show notable change from roughness resistivity, 16.2 to 4.2 nm 85.82 135.64 Ω cm,...

10.1002/pssa.202300036 article EN publisher-specific-oa physica status solidi (a) 2023-03-07

We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor deposition (MOCVD). In this study, three different thicknesses β-Ga2O3 dielectric layers were on leading to metal-oxide-semiconductor-HFET or MOSHFET structures. X-ray diffraction (XRD) showed (2¯01) orientation peaks in device structure. The van der Pauw and Hall measurements yield electron density ~ 4 × 1018...

10.3390/cryst13020231 article EN cc-by Crystals 2023-01-28

Non-contact electrostatic force microscopy techniques were used to study the open-circuit photovoltage of purple membrane multilayers electrodeposited on indium tin oxide. A humidity-dependent response under illumination by a 635 nm photodiode was observed. Peak photovoltages in excess 2 V at ∼36 W m−2 obtained for ∼15% relative humidity.

10.1088/0957-4484/14/5/315 article EN Nanotechnology 2003-04-09

Electrostatic force microscopy has evolved as a standard tool for electrical characterization of surfaces with high lateral resolution. Key to its success is an accurate and informative model the cantilever capacitance. In this brief review, we summarize progress made in dielectric using electrostatic discuss development various models analytically describe capacitive forces between tip sample. We include discussion recent extension these measurements liquid environment.

10.1142/s0217984914300117 article EN Modern Physics Letters B 2014-09-20

Soft lithography and thermal evaporation of gold were used to create microfluidic channels with metal only on the bottom surface each channel, in a process similar nanotransfer printing (nTP). Micron-scale patterns bioelectronic material purple membrane (PM) fabricated by combining standard soft electrophoretic deposition. Each metallized channel is converted into micron-scale electrophoresis cell filling PM solution applying small voltage. Any number can be created for variety device...

10.1088/0960-1317/15/8/016 article EN Journal of Micromechanics and Microengineering 2005-06-14

We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal-organic chemical vapor deposition (MOCVD). In this study, three different thicknesses dielectric layers were on leading to metal-oxide-semiconductor-HFET or MOSHFET structures. X-ray diffraction (XRD) showed (¯201) orientation peaks -Ga2O3 in device structure. The van der Pauw and Hall measurements yield electron density ~ 4...

10.20944/preprints202301.0174.v1 preprint EN 2023-01-10

This work reports yarn pull-out studies of commercially available Kevlar® KM2+ individual yarns coated with metallic layers (copper, aluminum, aluminum nitride and silver) via a directed vapor deposition process. The uncoated control metal-coated are hand-woven into fabric swatches for quasi-static experiments. To perform these experiments, fixture is custom-designed fabricated to apply transverse pre-tension the fabric. Three levels pre-tensions studied at 100 N, 200 400 N. results showed...

10.3390/fib11010007 article EN cc-by Fibers 2023-01-11

Abstract Single crystalline BaMnSb 2 is considered as a 3D Weyl semimetal with the 2D electronic structure containing Dirac cones from Sb sheet. We report experimental investigation of low-temperature cleaved surfaces using scanning tunneling microscopy/spectroscopy and low energy electron diffraction. By natural cleavage, we find two terminations: one Ba (above orthorhombically distorted sheet) another Sb2 (at surface Sb/Mn/Sb sandwich layer). Both terminations show × 1 reconstructions,...

10.1038/s41535-022-00494-y article EN cc-by npj Quantum Materials 2022-08-30

The copper- and iron-containing metal-organic frameworks(MOFs) HKUST-1 MIL-100(Fe) absorb organic molecules into their pores. When loaded with electron-rich oligothiophenes, these MOFs react under heat to initiate oxidative polymerization of entrapped monomers. This reaction is not observed in the non-redox-active MOF MIL-100(Al). resulting composites contain conjugated polymer dopants trapped inside pores, causing profound shifts composite electronic structure. We have characterized by...

10.26434/chemrxiv.7283474.v4 preprint EN 2018-12-13

Salts of the diazonium coupling agent p -phenylenebis(diazonium) form diazonium-terminated conjugated thin films on a variety conductive and nonconductive surfaces by spontaneous reaction with surface. The resulting diazonium-bearing surface can be reacted various organic inorganic nucleophiles to functionalized These have been characterized voltammetry, XPS, infrared Raman spectroscopy, atomic force microscopy. Substrates that conveniently quickly modified this process include ordinary...

10.26434/chemrxiv.5827758.v1 preprint EN 2018-01-26

We demonstrated a metal-organic chemical vapor deposition (MOCVD) of smooth and thick monoclinic phase-pure gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) on c-plane sapphires using silicon-oxygen bonding (SiO<sub>x</sub>) as phase stabilizer. were able to grow ~580nm β-Ga2O3 sapphire by MOCVD at 700 oC through stabilization silane. The samples grown with silane show reduction in the surface roughness resistivity from 10 nm 5 371 Ω.cm 136 Ω.cm, respectively. X-ray diffraction (XRD) reveals...

10.1117/12.2661097 article EN 2023-03-16

The noncentrosymmetric Weyl semimetal ${\mathrm{PtBi}}_{2\ensuremath{-}x}$ $(t\text{\ensuremath{-}}{\mathrm{PtBi}}_{2\ensuremath{-}x})$ exhibits various interesting technologically important physical properties. We report the experimental investigation of ${\mathrm{PtBi}}_{1.6}$ via second harmonic generation (SHG), single-crystal x-ray diffraction, magnetic susceptibility, and electrical resistivity measurements. While bulk structural, magnetic, properties show no phase transitions below...

10.1103/physrevb.108.224104 article EN Physical review. B./Physical review. B 2023-12-06

Unconventional superconductivity occurs often in materials with low dimensionality. Here, we report observed layered ${\mathrm{Li}}_{x}{\mathrm{SnSe}}_{2}$ the superconducting transition temperature ${T}_{c}\ensuremath{\sim}6$ K. Through $\mathrm{L}{\mathrm{i}}^{+}$ intercalation semiconducting ${\mathrm{SnSe}}_{2}$ via electrochemical process, is formed an extremely small $x$ value as estimated from $c$-axis lattice parameter, carrier concentration, and first-principles calculations....

10.1103/physrevb.109.224512 article EN Physical review. B./Physical review. B 2024-06-20
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