A5070369456- Magnetic properties of thin films
- Heusler alloys: electronic and magnetic properties
- Quantum and electron transport phenomena
- Magnetic Properties and Applications
- Electric Motor Design and Analysis
- ZnO doping and properties
- Physics of Superconductivity and Magnetism
- Magnetic and transport properties of perovskites and related materials
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Surface and Thin Film Phenomena
- Ferroelectric and Negative Capacitance Devices
- Characterization and Applications of Magnetic Nanoparticles
- Theoretical and Computational Physics
- Metallic Glasses and Amorphous Alloys
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Magnetic Properties of Alloys
- Semiconductor materials and devices
- Advanced Welding Techniques Analysis
- Shape Memory Alloy Transformations
- Electron and X-Ray Spectroscopy Techniques
- Intermetallics and Advanced Alloy Properties
- Force Microscopy Techniques and Applications
- Phase-change materials and chalcogenides
Antea Group (France)
2023-2024
Conference Board
2013-2024
Institute of Electrical and Electronics Engineers
2013-2024
University of York
2014-2023
Alpha Omega Electromagnetics (United States)
2018-2023
BioElectronics (United States)
2023
Tohoku University
2003-2023
Spintronics Research Network of Japan
2016-2023
City University of Hong Kong
2021
Gorgias Press (United States)
2019-2021
Spintronics is one of the emerging fields for next-generation nanoelectronic devices to reduce their power consumption and increase memory processing capabilities. Such utilise spin degree freedom electrons and/or holes, which can also interact with orbital moments. In these devices, polarisation controlled either by magnetic layers used as spin-polarisers or analysers via spin–orbit coupling. Spin waves be carry current. this review, fundamental physics phenomena described first respect...
Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly. Studies spintronics were started after discovery giant magnetoresistance 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer. Within 10 years, this had implemented into hard disk drives, most common storage media, followed by recognition through award Nobel Prize for Physics 19 years later. We have never experienced such fast development any...
The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain-wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) materials (vii) organic devices. Among them, for spintronic devices have been surveyed as first exercise. In this roadmap exercise, we targeted tunnel spin-valve...
Abstract Andreas Berger CICnanoGUNE BRTA Following the success and relevance of 2014 2017 Magnetism Roadmap articles, this 2020 edition takes yet another timely look at newly relevant highly active areas in magnetism research. The overall layout article is unchanged, given that it has proved most appropriate way to convey aspects today’s research a wide variety sub-fields broad readership. A different group experts again been selected for article, representing both breadth new areas, desire...
Abstract Heusler alloys have been theoretically predicted and experimentally demonstrated to be an ideal spin source due their half-metallicity at room temperature. The also offers low Gilbert damping constants for fast magnetization reversal with switching current density. These intrinsic properties can offer better operationability in spin-transfer-torque-based devices. In addition spin–orbit torque exerted using Hall caloritronic effects. precisely controlled by substituting the...
Recently, it has been predicted that a spin-polarized electrical current perpendicular to plane directly flowing through magnetic element can induce magnetization switching spin-momentum transfer. In this Letter, the first observation of current-induced (CIMS) in exchange-biased spin valves (ESPVs) at room temperature is reported. The ESPVs show CIMS behavior under sweeping dc with very high critical density. It demonstrated thin ruthenium (Ru) layer inserted between free and top electrode...
The pinning of domain walls in ferromagnetic (F) wires is one possible technique for the creation a solid state magnetic memory. Such system has been under consideration some time but main limitations control of, and non-uniformity wall pinning. Techniques such as lithographic definition notches steps substrate have had success creating local pins disadvantage being expensive to fabricate reproducibility strength limited. In this letter, we report on an alternative strategy create...
As a platinum group metal, iridium (Ir) is the scarcest element on earth but it has been widely used as an antiferromagnetic layer in magnetic recording, crucibles and spark plugs due to its high melting point. In layers have pin neighbouring ferromagnetic spin-valve read head hard disk drive for example. Recently, also found induce spin-polarised electrical current. these devices, most commonly antiferromagnet Ir–Mn alloy because of corrosion resistance reliable pinning adjacent layers. It...
Abstract In this article, we explore concrete examples of circularity strategies for critical raw materials (CRMs) in commercial settings. We propose a company-level framework systematically evaluating (e.g., material recycling, product reuse, and or component lifetime extension) specific applications CRMs from the perspectives industrial actors. This is applied qualitative analyses—informed by relevant literature expert consultation—of five case studies across range industries: (1) rhenium...
$D{0}_{3}$-ordered Fe${}_{3}$Si, which is one of the ferromagnetic Heusler compounds, has so far been formed by high-temperature heat treatments. Here, we demonstrate room-temperature $D{0}_{3}$ ordering Fe${}_{3}$Si films grown on Ge(111) using a molecular beam epitaxy (MBE) technique. In our MBE conditions, higher growth temperatures are not effective to obtain highly ordered structures because interfacial reactions between and Ge. Even for growth, degree can be improved with increasing...
We have successfully grown both L21 polycrystalline Co2CrAl and epitaxial L21-structured Co2FeAl films onto GaAs(001) substrates under an optimized condition. Both structural magnetic analyses reveal the detailed growth mechanism of alloys, suggest that film contains atomically disordered phases, which decreases moment per f.u., while satisfies generalized Slater–Pauling behavior. By using these films, tunnel junctions (MTJs) been fabricated, showing 2% magnetoresistance (TMR) for MTJ at 5K...
The broadband ferromagnetic resonance (FMR) measurement has been carried out by using a rectifying effect in two sets of ${\text{Ni}}_{81}{\text{Fe}}_{19}$ wires. One wire is deposited on the middle strip line coplanar waveguide (CPW) and another between lines CPW, measuring FMR induced in-plane out-of-plane magnetic fields, respectively. frequency defined detecting magnetoresistance oscillation due to magnetization dynamics radio (rf) field. magnetic-field dependence rectification spectrum...
We report an on-chip, electrically detected ferromagnetic resonance study on microbars made from GaAs/Fe(1 nm)/GaAs layers. Our experiments, performed at several different microwave frequencies and static magnetic field directions, enable us to observe a strong in-plane uniaxial anisotropy of the linewidth. attribute linewidth two magnon scattering process, supporting this by calculations possible broadening mechanisms. findings are useful for designing future high-performance spintronic...
Circularly polarized light was used to excite electrons with a spin polarization perpendicular the film plane in $3{\mathrm{nm}\mathrm{}\mathrm{A}\mathrm{u}/5\mathrm{}\mathrm{nm}\mathrm{}\mathrm{Ni}}_{80}{\mathrm{Fe}}_{20}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}(100)$ structures doping density range ${10}^{23}$ ${10}^{25}{\mathrm{m}}^{\mathrm{\ensuremath{-}}3}.$ At negative bias helicity-dependent photocurrent dependent upon magnetization configuration of and Schottky barrier height...