A5015570284- Luminescence Properties of Advanced Materials
- Advancements in Photolithography Techniques
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic Crystals and Applications
- Electron and X-Ray Spectroscopy Techniques
- Radiation Detection and Scintillator Technologies
- Laser Design and Applications
- Laser-Plasma Interactions and Diagnostics
- Semiconductor Lasers and Optical Devices
- Laser-induced spectroscopy and plasma
- Extraction and Separation Processes
- Recycling and Waste Management Techniques
- Perovskite Materials and Applications
- Laser and Thermal Forming Techniques
- Solid State Laser Technologies
- Inorganic Chemistry and Materials
- Nuclear materials and radiation effects
- Advanced Fiber Laser Technologies
- High-Velocity Impact and Material Behavior
- Physics of Superconductivity and Magnetism
- Laser Material Processing Techniques
- Manufacturing Process and Optimization
- Energetic Materials and Combustion
- Computational Fluid Dynamics and Aerodynamics
Fraunhofer Research Institution for Materials Recycling and Resource Strategies IWKS
2017-2024
Carl Zeiss (Germany)
2009-2023
General Fusion (Canada)
2017-2023
Fraunhofer Institute for Silicate Research
2016-2019
Technical University of Darmstadt
2004-2016
University of Applied Sciences Biberach
2015
Universität Ulm
2015
University of Konstanz
2001-2007
University of Würzburg
2002-2006
Siemens (Germany)
2005
We report on a method that allows the nanostructuring of surfaces with intense laser pulses. For this purpose isolated polystyrene spheres diameters in order wavelength were deposited silicon or glass surface. Illumination short and ultrashort pulses produced holes underneath these particles. Calculations field near particles make clear geometrical optics, is, focusing by spherical lens, as well near-field effects, contribute to size shape holes. This technique can be utilized for parallel...
A one-beam prototype of a large twenty-four-beam phosphate-glass laser system has been built and tested. Basic design characteristics include Nd-doped phosphate glass, rod amplifiers up to 90-mm diam, the propagation circularly polarized beam, extensive spatial filtering imaging, use large-aperture Pockels cells. The demonstrated focusable power in excess 750 GW/beam at 50-psec full width half-maximum (FWHM) pulse duration delivered 165 J energy 500-psec pulse. Maximum beam brightness...
We demonstrate experimentally for the first time feasibility of applying SMO technology using pixelated illumination. Wafer images SRAM contact holes were obtained to confirm 22nm node lithography. There are still challenges in other areas integration such as mask build, inspection and repair, process modeling, full chip design issues illumination, which is emphasis this paper. In attempt we successfully designed a manufacturable source had it fabricated installed an exposure tool. The...
This paper describes the principle and performance of FlexRay, a fully programmable illuminator for high NA immersion systems. Sources can be generated on demand, by manipulating an array mirrors instead traditional way inserting optical elements changing lens positions. On demand (freeform) source availability allows reduction in R&D cycle time shrink k1. Unlimited tuning better machine to matching. FlexRay has been integrated 1.35NA TWINSCAN exposure system. We will present data using...
Histone deacetylase (HDAC) inhibitors have been exploited for years to improve recombinant protein expression in mammalian production cells. However, global HDAC inhibition is associated with negative effects on various cellular processes. microRNAs (miRNAs) shown regulate gene almost all eukaryotic cell types by controlling entire pathways. Since miRNAs recently gained much attention as next-generation engineering tool Chinese hamster ovary (CHO) factories, we were interested if are able...
Moore's law drives the doubling of number transistors per unit area every 2-3 years. To enable cost-effective shrink future devices, a new High-NA EUV platform is being developed in joint collaboration between ASML and Carl Zeiss SMT. The scanner employs novel Projection Optics Box (POB) design concept with numerical aperture 0.55 that enables 8nm half pitch resolution high throughput. POB tackles limitations angular acceptance multilayer (ML) masks at increased NA, however also has...
The optical properties of pulsed laser deposited highly crystalline SrMoO3 thin films were investigated. Due to their low resistivity below 30 μΩ cm, are candidates for transparent conductor applications. transparency extends into the ultraviolet range about 300 nm. In this range, has a higher at similar sheet resistance as compared alternative oxide or metallic materials. Density functional theory shows that electron-electron correlation effects small in other low-resistivity transition...
Cs Br : Eu 2 + has recently been investigated as a photostimulable x-ray storage phosphor with great potential for application in high-resolution image plates. In recent paper Hackenschmied et al. [J. Appl. Phys. 93, 5109 (2003)] suggested that segregations of CsEuBr3 or Cs4EuBr6 formed within CsBr:Eu2+ during annealing are responsible an increase the photostimulated luminescence (PSL) yield. this work single crystals were prepared by one step synthesis and identified diffraction (XRD)...
Lithium-ion batteries are crucial for non-emission technologies, like electric vehicles and renewable energy sources. The growing battery market causes supply risks affected raw materials cobalt, nickel, natural graphite and, in the future, lithium. On other hand, number of end-of-life Li-ion grows significantly provides an additional source these critical via recycling. In electrohydraulic fragmentation (EHF), cells disintegrated at component interfaces, thus separating those components....
Meeting the increasing demand for energy storage based on lithium-ion batteries (LIB) is not only a question of resource availability but also an issue conservation and efficient recycling management. In this respect, sustainable concepts play central role in mindful interactions with valuable materials. Based approach, process interconnection hydromechanical preparation, flotation, pyrometallurgical treatment was investigated. The preparation showed promising results achieving highly pure...
By adopting the new design of optics within scanner, high-NA (0.55NA) EUV lithography enables higher resolution, which will push single patterning down to pitch 16nm (k1=0.34, same k1 value as 28nm for 0.33NA patterning). Therefore, 0.55NA EUVL is projected print most critical features 2nm node (and beyond) logic chips with less steps than EUVL, and highly expected by industry. Besides, novel low-n low-k absorber attenuated phase shift masks (low-n attPSMs) are commercially available...
Photonic crystals with infiltrated liquid are investigated in the 1.5μm wavelength regime. Due to strong temperature dependence of refractive index crystals, especially near clearing point, i.e., at transition between nematic and isotropic phase, optical properties photonic can be tuned by small changes. The is birefringent and, therefore, sensitive for polarization incident light. By using microresonators embedded into planar crystal waveguides, without investigated. experimental results...
The present paper relates to a method for synthesizing the photostimulable storage phosphor BaFBr:Eu2+ that features high stimulation characteristics use in image plates. All previous synthesis routes consist of multistep process whereas presented route is one-step synthesis. Starting compounds are BaCO3, NH4F, and NH4Br, as well EuF3 where ammonium highly volatile at temperatures below 300°C. Their reaction products initiate decomposition BaCO3 form BaFBr. incorporation F-centers europium...
Oxygen impurities have been detected in undoped CsBr by photoluminescence (PL) spectroscopy and their contribution to photostimulated luminescence (PSL) properties of powdered is discussed. When excited at 200 nm, PL observed from which consists three separate emission peaks. The intrinsic 379 nm accompanied two peaks 395 460 arise oxygen impurities, the latter also PSL active following x-irradiation. Sintering with reducing agent NH4Br removes so that emissions are no longer detectable,...
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS in parallel ramping up their activities on an exposure tool NA of 0.55. The purpose this high-NA scanner, targeting ultimate resolution 8nm, is extend Moore's law throughout the next decade. A novel design, capable providing required Aperture, has been identified; will be paired new, faster stages more accurate sensors enabling tight focus overlay control needed...
The laser emission of an InAs/GaAs quantum-dot after injection a nonresonant optical pulse is time resolved using femtosecond upconversion. injected burns hole into the gain spectrum that leads to ultrafast redistribution carriers away from lasing wavelength, thereby generating spatial domain reduced intensity. This propagates through laser, reflected at facets, and thus repeats periodically in output forming train dark pulses. As slower response optically induced perturbation,...
Plasma was generated by 35 ps 1.06 mu m laser pulses, focused on to plane Perspex slabs in vacuum. Reflectivity and electron temperature were measured as functions of incident intensity between 2*1011 2*1014 W cm-2. The scaling laws compared with a one-dimensional code. In this short pulse regime, the coronal is determined balance inverse bremsstrahlung plasma absorption enthalpy flow. from X-ray emission interpreted that cooler overdense plasma. For interpretation experimental measurements,...