A5074102933- Advanced ceramic materials synthesis
- Fusion materials and technologies
- Nuclear Materials and Properties
- Advanced materials and composites
- Aluminum Alloys Composites Properties
- Silicon Carbide Semiconductor Technologies
- Graphite, nuclear technology, radiation studies
- Metal and Thin Film Mechanics
- Nuclear reactor physics and engineering
- Nuclear materials and radiation effects
- Nuclear and radioactivity studies
- Semiconductor materials and devices
- High-Velocity Impact and Material Behavior
- Ion-surface interactions and analysis
- Nuclear Physics and Applications
- Microstructure and Mechanical Properties of Steels
- Fiber-reinforced polymer composites
- Boron and Carbon Nanomaterials Research
- Silicon and Solar Cell Technologies
- Metal Alloys Wear and Properties
- Additive Manufacturing and 3D Printing Technologies
- Medical Imaging Techniques and Applications
- Radiation Shielding Materials Analysis
- Advanced Surface Polishing Techniques
- Digital Radiography and Breast Imaging
Oak Ridge National Laboratory
2015-2024
Government of the United States of America
2022-2023
Tokyo Metropolitan University
1998-2020
University of Tennessee at Knoxville
2008-2020
National Technical Information Service
2008-2018
Office of Scientific and Technical Information
2008-2018
UT-Battelle
2017
Lawrence Berkeley National Laboratory
2017
University of California, Berkeley
2017
Naval Research Laboratory Materials Science and Technology Division
2016
Growth and microstructure of a protective or nonprotective SiO 2 scale the subsequent volatilization formed on high‐purity chemical vapor deposited ( CVD ) SiC nuclear‐grade / composites have been studied during high‐temperature 100% steam exposure. The environmental parameters interest were temperature from 1200°C to 1700°C, pressure 0.1 MPa flow velocities 0.23 145 cm/s. Scale was characterized via electron microscopy X‐ray diffractometry. Arrhenius dependence parabolic oxidation linear...
Radiation tolerance is determined by how effectively the microstructure can remove point defects produced irradiation. Engineered nanocrystalline SiC with a high-density of stacking faults (SFs) has significantly enhanced recombination interstitials and vacancies, leading to self-healing irradiation-induced defects. While single crystal readily undergoes an crystalline amorphous transformation at room temperature, nano-engineered SFs exhibits more than order magnitude increase in radiation...