A5013939338- Diamond and Carbon-based Materials Research
- Silicon Nanostructures and Photoluminescence
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Photonic and Optical Devices
- Photorefractive and Nonlinear Optics
- Force Microscopy Techniques and Applications
- Advanced Fiber Laser Technologies
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- ZnO doping and properties
- Additive Manufacturing Materials and Processes
- Chalcogenide Semiconductor Thin Films
- Mechanical and Optical Resonators
- Magneto-Optical Properties and Applications
- 2D Materials and Applications
- Advanced Materials Characterization Techniques
- High-pressure geophysics and materials
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Carbon Nanotubes in Composites
- Optical Systems and Laser Technology
- Optical Network Technologies
- Nuclear materials and radiation effects
SUNY Polytechnic Institute
2015-2020
Purchase College
2014-2019
University at Albany, State University of New York
2012-2018
Albany State University
2018
University of Dayton
2016
York University
2014
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for networks. Here we report on the and properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical spectroscopy, verify inversion-symmetric electronic structure SnV, identify spin-conserving spin-flipping transitions, characterize transition linewidths, measure electron lifetimes, evaluate dephasing time. We find consistent with...
We report on quantum emission from Pb-related color centers in diamond following ion implantation and high-temperature vacuum annealing. First-principles calculations predict a negatively charged Pb-vacancy (PbV) center split-vacancy configuration, with zero-phonon transition around 2.4 eV. Cryogenic photoluminescence measurements performed emitters nanofabricated pillars reveal several transitions, including prominent doublet near 520 nm. The splitting of this doublet, 5.7 THz, exceeds that...
Towards building large-scale integrated photonic systems for quantum information processing, spatial and spectral alignment of single to nanocavities is required.Here, we demonstrate spatially targeted implantation nitrogen vacancy (NV) centers into the mode maximum 2-d diamond crystal cavities with quality factors up 8000, achieving an average 1.1 ± 0.2 NVs per cavity.Nearly all NV-cavity have significant emission intensity enhancement, reaching a cavity-fed spectrally selective F int ,...
Fabrication of p-Si(111) layers with Ti levels well above the solid solubility limit was achieved via ion implantation 15 keV 48Ti+ at doses 1012 to 1016 cm−2 followed by pulsed laser melting using a Nd:YAG (FWHM = 6 ns) operating 355 nm. All implanted were examined cross-sectional transmission electron microscopy, and only implant dose showed evidence clustering in microstructure pattern Ti-rich zones. The liquid phase diffusivity diffusive velocity Si estimated be 9 × 10−4 cm2/s (2 ± 0.5)...
Implanting gold ions in silicon at concentrations far higher than the equilibrium solubility limit promotes sub-band-gap optical absorption, and thus has been explored context of Si-based near-infrared photodetectors. This absorption enhancement decreases after annealing, though, according to structural relaxation material. In this article, evolution composition structure Au-hyperdoped Si thermal is investigated detail. The results provide crucial information for fabricating devices using...
We report on the incorporation of gold into silicon at a peak concentration 1.9 × 1020 at./cm3, four orders magnitude above equilibrium solubility limit, using pulsed laser melting thin film deposited surface. vary thickness and process parameters (fluence, number shots) to quantify range concentrations that can be achieved. Our approach achieves comparable those achieved with ion implantation followed by melting, in layer high crystalline quality. This offers an attractive alternative for...
Helium-ion-induced radiation damage in a LiNbO3-thin-film (10 μm-thick) modulator is experimentally investigated. The results demonstrate degradation of the device performance presence He(+) irradiation at doses ≥ 10(16) cm(-2). experiments also show that stopping region, which determines degree overlap between ion-damaged region and guided optical mode, plays major role determining modulation performance. Our measurements showed higher can lead to an additional ~5.5 dB propagation loss....
The characterization of the optical properties pseudomorphic Ge1−xSnx/Ge/Si (x = 0 to 0.11) alloys from IR UV is presented. Ge1−xSnx were epitaxially grown on relaxed Ge Si. Rutherford backscattering (RBS) and RBS ion channeling methods used confirm Sn composition substitutional nature into lattice. confirmed using high resolution x-ray diffraction (HRXRD) transmission electron microscopy. Although HRXRD reciprocal space maps indicated that was Ge, shape Bragg peaks sample surface rough....
In this work, a battery of analytical methods including in situ RBS/C, confocal micro-Raman, TEM/STEM, EDS, AFM, and optical microscopy were used to provide comparative investigation light-and heavy-ion radiation damage single-crystal LiNbO 3 .High (~MeV) low (~100s keV) ion energies, corresponding different stopping power mechanisms, their associated events observed.In addition, sequential irradiation both species was also performed cumulative depth-dependent determined.It found that the...
This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to dose of 1017/cm2, some them received an additional argon implant 5 × 1015 /cm2 at energy between 30 300 keV. Compared the case single H implant, processing involved both Ar implants post-implantation annealing has created much higher degree surface texturing, leading more...
We investigate the optical properties of quantum emitters formed in diamond after implantation Pb and subsequent high-temperature annealing. find narrow-band emission two spectral ranges, indicating multiple classes Pb-related color centers.
Integrating magnetic functionalities with silicon holds the promise of developing, in most dominant semiconductor, a paradigm-shift information technology based on manipulation and control electron spin charge. Here, we demonstrate an ion implantation approach enabling synthesis ferromagnetic layer within defect free Si environment by exploiting additional implant hydrogen region deep below metal implanted layer. Upon post-implantation annealing, nanocavities created H-implanted act as...
We study He+-induced radiation damage in 10-μm-thick LiNbO3-thin-film modulators. Results show induced-strain, scattering from interstitials, and the degree of overlap between guided modes with damaged region result degradation device extinction ratio VπL.