Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic device in converters. Condition monitoring of IGBT critical for avoiding sudden failures. Health management converters based on accurate junction temperature great importance to reliable operation. However, existing methods have some drawbacks, including low feasibility online implementation, intrusiveness, and slow response. has a strong influence on-state voltage drop. A novel measurement method drop...

Bond wire degradation is one of the most common failure modes for wire-welded packaging insulated-gate bipolar transistor (IGBT) modules. This article proposes a novel bond detection method based on IGBT turn-on gate voltage overshoot. The degree wires lift-off will change stray inductance charge loop circuit, and therefore has strong influence overshoot before miller platform, which can be used as an effective fault indicator. A double pulse test platform built to verify resolution...

Fast and accurate online monitoring of junction temperature insulated gate bipolar transistor (IGBT) chips is great significance for overtemperature protection thermal stress optimization IGBTs. However, existing IGBT estimation methods have drawbacks dependence on bond wire degradation, low resolution, nonlinearity, difficulty in implementation. In this article, a novel <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in situ</i> method via...

Online junction temperature ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T_j</i> ) monitoring is critical for high reliability operation of semiconductor devices. <sc xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state drain-source resistance xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> the most widely used indicator SiC metal oxide field effect transistors...

Silicon carbide (SiC) power devices are promising in industrial applications. Junction temperature monitoring is greatly significant for improving the reliability of and systems. However, state-of-the-art SiC MOSFET junction estimation methods generally have drawbacks low resolution, difficult measurement, complicated installation. In this article, a novel MOSFETs based on dc bus voltage undershoot proposed. The correlation between current change rate analyzed verified by experiments. each...

Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for converter's healthy management and condition monitoring. However, most conventional IGBT estimation methods are device-level, which means that temperatures of all IGBTs in converters require the same number units as IGBTs, high complexity cost. A converter-level method based on dc bus voltage ringing proposed this article. The peak values during switching transient display a linear dependence...

Online aging monitoring is the basis for high reliability operation of Insulated gate bipolar transistors (IGBTs). Most methods focus on package-related aging. Leakage current ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">leak</sub> ) has been proposed as a potential chip-related (CRA) indicator IGBTs. However, this method not implemented online due to difficulty in accurate leakage...

Temperature estimation of MOSFET is crucial, for failure semiconductors closely related to the junction temperature. In order improve reliability semiconductor devices, it necessary realize on-line temperature monitoring. However, remains a challenge measure fast and precisely, especially high-switching-frequency such as silicon carbide (SiC) devices. To monitoring SiC MOSFETs, this paper proposes new method based on on-state resistance. Firstly, resistance proven theoretically be an...

Junction temperature monitoring and bond wire detection are crucial for the condition protection of insulated gate bipolar transistor (IGBT) freewheeling diode (FWD). <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state voltage drop is one most popular parameters junction estimation detection. However, there still a lack cost-effective measuring techniques both IGBT FWD with fast response. This article proposes an <italic...

Online monitoring for underground power cable insulation has become an urgent need in distribution grids, which can lead to proactive maintenance and avoid severe faults. Insulation capacitance been selected as effective condition indicator many researches, but the variation of conductance is always overlooked, resulting a limited range sensitivity. To solve this problem, novel online method based on resonance frequency analysis under chirp signal injection proposed article. An scheme...

Common-mode (CM) leakage current is an essential insulation indicator for condition monitoring in distribution grids. However, online measurement of CM a difficult task the industry due to disturbances far larger load currents. To address this challenge, novel method based on multilayer magnetic shield has been proposed article. The analytical solution field around first derived and validated by finite-element analysis. A comprehensive comparison with previous single-layer design then...

Online monitoring for underground power cable insulation will lead to early alarms of faults in distribution grids, which has become an urgent need the industry. However, existing approaches require complicated devices, and cannot provide estimation ageing severity. A novel online method based on common-mode (CM) signal injection is proposed this article. CM device designed by modifying secondary side current transformer system, with no extra voltage source. scheme leakage measurement at...

The reliability of power electronic devices and converters is closely related to thermal stress. However, the research on insulated gate bipolar transistor (IGBT) heat balance in converter still insufficient. To address this problem, a novel management method for enhancing consistency IGBT stress proposed article. A converter-level based bus voltage ringing utilized junction temperature monitoring. loss can be controlled by modulating switching frequency, thus adjusted improve converter....

The insulated-gate bipolar transistor (IGBT) junction temperature is crucial for condition monitoring, reliability assessment, and health management. However, the existing IGBT monitoring methods are affected by aging of bond wires. A novel estimation method independent wire degradation proposed in this article. On-state voltage drop turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> gate overshoot analyzed dependence on...

The operating life of a wide-bandgap power device over wide temperature range

Line commutated converter high voltage direct current (LCC-HVDC) transmission has unique advantages and plays an irreplaceable role in the power system. It is of great significance to study commutation process. The traditional ideal model process neglects many valve parameters. In this paper, consistency problems parameters early slight faults station are considered. studied a more accurate module built, which revises model. Based on Haminan-Zhengzhou HVDC project, analysis results...

Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic device in converters. The junction temperature monitoring of IGBT critical for avoiding sudden failures and health management However, existing methods have some disadvantages including low feasibility on-line measurement, intrusiveness slow response. A novel measurement method based on on-state voltage drop proposed this paper. has a strong influence drop. This paper considered current circuit...

The junction temperature estimation of the insulated gate bipolar transistor (IGBT) module is crucial for reliability assessment and health management converters. However, most existing methods need to measure collector-emitter voltage collector current IGBT estimation, which increases cost complexity monitoring calibration process. In this article, a novel method modules without involving operating condition based on pre-overshoot proposed. influenced by internal resistor, has linear...

In order to satisfy the requirement of fast dynamic response, high linearity and low distortion for power supply piezoelectric actuators, this article presents a real-time sinusoidal voltage-adjustment (RTSPS) with enhanced reference-tracking capability. The proposed is composed pair interleaved buck converters an analog amplifier. Since have adequately voltage amplifier can follow its output reduce loss. operating principles are presented, improved capability analyzed verified by...

Thermal monitoring is crucial for the protection and control of power electronics devices. On-state voltage drop most popular parameter junction temperature estimation. However, there still a lack compositive estimation technique with fast response insulated gate bipolar transistor (IGBT) module, including freewheeling diode (FWD). A novel in situ IGBT FWD module based on on-state measurement proposed this paper. The method can measure drops on-line high accuracy. With acquirement utilizing...

The thyristor is widely applied in industrial applications, for instance, line commutated converter-based high voltage direct current (LCC- HVDC) transmission. performance of the directly affects reliable operation system and it closely related to temperature. on-state can be used temperature estimation thyristor. However, there are few studies about online measurement Therefore, particularly crucial further study technique thyristors. In this paper, a novel measuring method proposed....

PiN diode is the most widely used power electronic device in converters. The condition monitoring of critical to junction temperature close related safe operation areas diodes and Therefore, real-time great significance for avoiding sudden failures health management. has a strong influence on its switching processes. A novel estimation method based traces proposed. mechanisms processes are analyzed. peak reverse recovery current studied utilized estimate experimentally. increases with...

Insulated Gate Bipolar Transistor (IGBT) is one of the most critical devices in converters. It great significance to provide online monitoring and over-temperature protection for IGBT reliable operation Leakage current a suitable parameter high-temperature warning. A novel leakage measurement technique modules proposed this paper. circuit structure diode paralleling resistor based on Volt-Ampere Characteristics resistor. This method can IGBT. Finally, test circuitry presented verify accuracy...