A5066352248- Silicon and Solar Cell Technologies
- Ion-surface interactions and analysis
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Laser Material Processing Techniques
- Thermography and Photoacoustic Techniques
- Solid-state spectroscopy and crystallography
- Crystallography and Radiation Phenomena
- Integrated Circuits and Semiconductor Failure Analysis
- Radiative Heat Transfer Studies
- Semiconductor materials and devices
- Intermetallics and Advanced Alloy Properties
- Electrohydrodynamics and Fluid Dynamics
- Acoustic Wave Resonator Technologies
- Aerospace, Electronics, Mathematical Modeling
- X-ray Diffraction in Crystallography
- Industrial Engineering and Technologies
- Advanced MEMS and NEMS Technologies
- Radiation Effects and Dosimetry
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Energy Technologies and Civil Engineering Innovations
- Structural Analysis and Optimization
Institute of Microelectronics
2015
Tbilisi State University
1997-2008
Georgian National Academy of Sciences
1982
Czech Academy of Sciences, Institute of Physics
1982
For specific modification of the fundamental optical and photoelectrical properties silicon transparent for wavelengths beyond 1.1μm, boron ions have been implanted into n-type wafers at doses 1 х 10 13 cm -2 –1 15 followed by annealing 900 °C 1000 (20 min). The IR reflection spectra, Raman spectroscopy scanning electron microscopy data compared with photosensitivity spectra (1.4–2.2 μm) integrated photoresponse in (1.0–4.1 UV (0.25–0.4 regions. These studies allow materials engineering to...
The optical and electrical characteristics of p–n photodiodes based on monocrystalline n‐Si (wafers with ρ = 70 10 Ohm · cm SOI) implanted B + in the dose range 1 × 14 –1 15 сm −2 annealed at 900 °C (20 min) are studied. structures exhibit photosensitivity short‐wavelength infrared region (SWIR) different maximum intensities depending resistivity. Leakage currents also dose‐dependent. character SOI spectra is somewhat different. properties described terms formation extended defects deep...
In the present work is studied synthesis of galium nitride (GaN) and aluminum (AlN) by DC Reactive Magnetron Sputtering technology. As a sputtering target was used high purity (99.9999%) Gallium Aluminum materials as reagent gas Nitrogen. system with strong magnets (1450 mT) allows to make plasma at low preasure 3 × 10-2 Pa deposition process carried out vacuum conditions. Deposited layers GaN AlN on sappire substrate analysed X-ray diffraction (XRD) revealed crystalline nature highly...
A radiation defect responsible for the 0.52 eV absorption band in IR spectrum of irradiated Ge is investigated. n-type samples cut three main crystallographic directions 〈111〉, 〈110〉, and 〈100〉 are by 3 to 5 MeV electrons at T ≈ 77 K. During measurements monochromatic polarized light uniaxial stress used. It shown that studied hae property dichroism. Besides, depending on direction applied stress, variations value revealed. The space orientation giving rise determined. Based analysis data...
A new technique is proposed, verified, and described for measuring photosensitivity spectra of semiconductor materials devices in the wavelength range 200–4100 nm utilizing an innovative setup termed “Polychromator” with a system cut-off optical filters that provide sharp edge spectrum radiation impinging on sample. The measured value, referred to as selective integral (SIPhS), calculated particular subbands taking into account power. Certain IR spectral characteristics, monochromator, are...
Mechanisms of diffusion processes in semiconductors. / Z. Jibuti, A. Bibilashvili, N. Dolidze. Nano Studies. – 2021–2022. # 21/22. pp. 57-62. geo. The paper presents an original approach to describing the impurities semiconductors developed by Professor Alex Gerasimov and his research team. dependence coefficients various Ge, Si, AIIIBV, AIIBVI AIVBIV semiconducting materials on number process conditions, particular, temperature is studied. An analysis done how well standard physical models...
Obtaining thin film semiconductor oxides by stimulated plasma anodizing technology and their studying. / A. Bibilashvili, N. Dolidze, Z. Jibuti. Nano Studies. – 2021–2022. # 21/22. pp. 23-38. geo. The work is devoted to development of the obtaining oxide films anodization investigation physical properties Professor Alex Gerasimov his colleagues. Low-temperature methods metals semiconductors, which use solid catalysts (rare earth metals) ultraviolet light, are discussed. Electrophysical,...
Study and application of radiation defects in semiconductors structures. / N. Dolidze, A. Bibilashvili, Z. Jibuti. Nano Studies. – 2021–2022. # 21/22. pp. 39-56. geo. The article deals with the investigation Ge irradiated by accelerated electrons γ-quanta at 77 K Prof. Gerasimov his research group. Since use such a powerful method as electron paramagnetic resonance for determining microstructure solids is impossible Ge, data on are obtained basis indirect measurements study electrophysical,...
Abstract Nanosecond laser annealing of GaAs amorphized with B+ ions implantation was investigated. The recrystallization process observed in the experiment does not depend on initial temperature samples (77K or 300K) and can be additive; efficiency (LA) is determined by light generated nonequilibrium charge carriers (NCC) rather than crystal heating; results experiments cannot explained purely thermal mechanism LA. hypotheses for low-temperature LA semiconductors based concept change quantum...