A5075710765- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Ga2O3 and related materials
- Anodic Oxide Films and Nanostructures
- Electrohydrodynamics and Fluid Dynamics
- Nanotechnology research and applications
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Advanced Photocatalysis Techniques
- Metal and Thin Film Mechanics
- Transition Metal Oxide Nanomaterials
- Radiation Effects in Electronics
- Advancements in Solid Oxide Fuel Cells
Tbilisi State University
2016
The electrical and structural properties of hafnium oxide (HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) received by ultra violet (UV)-stimulated plasma anodizing were investigated. process is carried out at a relatively low temperature (400 °C) distinguished as clean, vacuum, easy process. With this technology in 5-10 min the result 50-100-nm thickness layer. Our experiments used Hafnium metal deposited onto silicon substrate...
In this report we consider HfO2 dielectric layer received by UV stimulated plasma anodizing. This is distinguished good electric parameters. For purpose, it was used C-V characterization technic and calculate constant, flatband voltage, thrishold bulk potential, work function, oxide effective charge, charge concentration. The measurement carried out on Keithley Instrument - Semiconductor Parameter Analyzer 4200, thickness measured reflectometer MprobeVis System.
Memristore parameters are strongly depend on the size of active layers. In this paper is reported outcomes memristore created with different There considered 1μ, 5μ and 10μ diameter separated devices in form crossbar HfO2 + HfOx layer tungsten top contact, titanium nitride botton contact aluminum wiring contact. As substrate was used sapphire layers deposited by reactive magnetron sputtering technology. With photolithography exposure system new pothomask has been done lithography for...
In the present work is studied synthesis of galium nitride (GaN) and aluminum (AlN) by DC Reactive Magnetron Sputtering technology. As a sputtering target was used high purity (99.9999%) Gallium Aluminum materials as reagent gas Nitrogen. system with strong magnets (1450 mT) allows to make plasma at low preasure 3 × 10-2 Pa deposition process carried out vacuum conditions. Deposited layers GaN AlN on sappire substrate analysed X-ray diffraction (XRD) revealed crystalline nature highly...
In this paper we offer low temperature technology receiving GaAs oxide. For purpose, use plasma anodizing with ultraviolet irradiation. Formation native oxide of is a problem and solving scientific challenge. This provides the information about kinetic growing oxide, measurement C-V characteristic, analysis XPS spectra Auger Spectroscopy, distribution profiles oxygen, Gallium Arsenide in total surface roughness state density dependence on current.
Abstract In the present work, we report result of study electron and γ -radiation effect on parameters normally open closed field transistors with Shottky barrier GaAs. It has been shown that are more sensitive to action radiation than opened transistors. Both radiation. As substrates ware used epitaxial structures GaAs n -type conductivity doped tellurium N D =2×10 17 cm 3 surface orientation [100]. Electron irradiation was conducted linear accelerator RELUS type energy 4 MeV at room...
Abstract Modern technologies for creating integrated circuit elements offer many innovations, both in terms of the technological cycle and introduction new technologies. Stimulated processes this regard their mechanism require a thorough study order to further improve technology parameters micro nano devices made on basis. We have studied stimulated by ultraviolet radiation, such as Plasma Anodizing Magnetron Sputtering. In should be considered which are going with irradiation sample plasma....
Abstract The improvement of the characteristic parameters memristor depends on factors such as thickness and surface area active layer. These define leakage currents, which is main disatvantige memory storage device to improve electrical features currents must be dropped zero in ideal case. In presented work described isolation layer from substrate by thin photoresist, an insulator. For reducing was used new fotomask, able reduce 100 times. structures are designed form “crossbars”, allows us...
The electrical and structural properties of titanium oxides TiO 2 /TiO x fabricated by reactive magnetron sputtering were studied used in a memristor. X-ray diffraction [Formula: see text]–[Formula: text] measurements performed order to characterize the structures.
Abstract Low temperature technologies creating metals oxides are a promising solution for formation integral circuit elements. In this report the electric properties of zirconia (ZrO 2 ) received by low (∼ 400° C) UV stimulated plasma anodizing have been investigated. Zirconia is potential high-k dielectric material with applications as agate insulator in transistors. This distinguished good parameters. For purpose, we used C-V characterization technic and calculate constant, flatband...