A5019932333- Photonic and Optical Devices
- Mechanical and Optical Resonators
- Advanced Fiber Laser Technologies
- Advanced Photonic Communication Systems
- Spectroscopy and Laser Applications
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Advanced MEMS and NEMS Technologies
- Atmospheric and Environmental Gas Dynamics
- Advanced Fiber Optic Sensors
- Atmospheric Ozone and Climate
- Force Microscopy Techniques and Applications
- Acoustic Wave Resonator Technologies
- Photorefractive and Nonlinear Optics
- GaN-based semiconductor devices and materials
- Analytical Chemistry and Sensors
- Neural Networks and Reservoir Computing
- Quantum Information and Cryptography
- Thermal properties of materials
- Semiconductor Quantum Structures and Devices
- Quantum optics and atomic interactions
- Aluminum Alloys Composites Properties
- Microstructure and mechanical properties
- Laser Design and Applications
Minjiang University
2022-2023
Wuhan University of Science and Technology
2023
Institute of Intelligent Machines
2022
Chinese Academy of Sciences
2022
Zhengzhou University
2022
Kunming University of Science and Technology
2019-2022
China Academy of Engineering Physics
2021
IBM Research - Thomas J. Watson Research Center
2016-2020
IBM (United States)
2014-2017
Nanyang Technological University
2017
Aluminum nitride (AlN) is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report frequency comb generation from high-quality-factor AlN microring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing phase matching four-wave mixing, combs are generated with a single-wavelength continuous-wave pump laser. Further, Kerr coefficient (n₂) of extracted...
Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for signal processing on-chip networks. However, is limited wavelengths above 1.1 μm does not provide desired lowest order nonlinearity processing. Here we report aluminum nitride (AlN) films on substrates bring functionalities chip-scale photonics. Using...
The integration of complex oxides on silicon presents opportunities to extend and enhance technology with novel electronic, magnetic, photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide attractive dielectric electro-optic Here we demonstrate nanophotonic circuits incorporating BaTiO3 thin films the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline directly SOI engineer integrated...
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in visible spectrum range where low noise lasers are conveniently available. The narrow band gap also makes devices susceptible strong two-photon absorption free carrier absorption, which often introduce thermal effect that limit devices' stability cooling performance. Further, provide...
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable harmonic generation at nm. The \{chi}(2) nonlinear susceptibility is measured to be as high 16 plus minus 7 pm/V. Because has wideband transparency window covering ultraviolet, visible infrared wavelengths, our...
We demonstrate second order optical nonlinearity in aluminum nitride on insulator substrates. Using sputter-deposited thin films we realize nanophotonic waveguides coupled to micro-ring resonators that simultaneously support cavity resonant modes for both visible and IR light. By using phase matched ring resonators, achieve efficient second-harmonic generation are able generate up 0.5uW of light the chip with a conversion efficiency -46dB. From measured response obtain non-linear...
It is a fundamental challenge in quantum optics to deterministically generate indistinguishable single photons through non-deterministic nonlinear optical processes, due the intrinsic coupling of single- and multi-photon generation probabilities these processes. Actively multiplexing generated many temporal modes can decouple probabilities, but key issues are minimize resource requirements allow scalability, ensure indistinguishability photons. We demonstrate from four solely using...
Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates development of faster more-efficient silicon links. While it is challenging raise serial line rate, further scaling rate can be realized by, example, increasing number parallel fibers, wavelengths per fiber, using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a...
In this paper, we demonstrate a source of photon pairs based on four-wave-mixing in photonic crystal fibres. Careful engineering the phase matching conditions fibres enables us to create at 597 nm and 860 an intrinsically factorable state showing no spectral correlations. This allows for heralding one pure hence renders narrow band filtering obsolete. The is band, bright achieves overall detection efficiency up 21% per photon. For first time, Hong-Ou-Mandel interference with unfiltered...
We demonstrate high optical quality factors in aluminum nitride (AlN) photonic crystal nanobeam cavities. Suspended AlN nanobeams are fabricated sputter-deposited AlN-on-insulator substrates using a self-protecting release process. Employing one-dimensional cavities coupled to integrated circuits we measure up 146,000. By varying the waveguide-cavity coupling gap, extinction ratios excess of 15 dB obtained. Our results open door for bandgap structures made from low loss, wide-transparency,...
We develop a piezoelectrically actuated, one-dimensional acoustic and photonic crystal nanocavity fabricated from aluminum nitride (AlN). Through simultaneous band structure engineering in both domains, we obtain high-quality piezo-acousto-photonic nanocavities with intrinsic optical Q of 1.2 × 105. The piezoelectric actuation the confined mechanical mode at 3.18 GHz is demonstrated exceeding 10 000. Such will find important applications cavity optomechanics that desire effective coupling to...
We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q microring resonators are realized near infrared, and visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth etch-induced defects. Reduction these defects improved material device processing could...
Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and mechanical loss. Integrated microring shape suspended rings exhibit high quality factor (Q) with loaded Q up to 125,000. Optomechanical transduction Brownian motion a GHz contour mode yields displacement sensitivity 6.2\times10^(-18)m/Hz^(1/2) ambient air.
A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition, can offer enhanced performance yield in hybrid-assembly for applications at 25 Gbaud beyond.
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss waveguides realize high-quality optical resonators. In the telecoms C-band (1520-1580 nm), obtain highest Q factor of 440,000. Critical coupled devices show extinction ratio above 30 dB. For wavelengths (around 770 intrinsic quality factors excess 30,000 is demonstrated. Our work illustrates potential AlN...
We present a monolithic integrated aluminum nitride (AlN) optomechanical resonator in which the mechanical motion is actuated by piezoelectric force and displacement transduced high-Q optical cavity. The AlN excited from radio-frequency electrode via small air gap to eliminate resonator-to-electrode loss. observe electrically at 47.3 MHz, 1.04 GHz, 3.12 corresponding 1st, 2nd, 4th radial-contour mode of wheel resonator, respectively. An equivalent circuit model developed describe observed...
Aluminum nitride (AlN) has been shown to possess both strong Kerr nonlinearity and electro-optic Pockels effect. By combining these two effects, here we demonstrate on-chip reversible on/off switching of the optical frequency comb generated by an AlN microring resonator. We optimize design gating electrodes underneath resonator structure effectively apply electric field without increasing loss. The is monitored measuring one peaks while varying field. controlled response investigated for...
We demonstrate wheel-shaped silicon optomechanical resonators for resonant operation in ambient air. The high finesse of optical whispering gallery modes (loaded Q factor above 500,000) allows efficient transduction the wheel resonator's mechanical radial contour frequency up to 1.35 GHz with around 4,000
We report a demonstration of four-level pulse amplitude modulation (PAM-4) using segmented traveling-wave silicon photonic Mach-Zehnder modulator with monolithically integrated CMOS drivers. The PAM-4 transmitter shows clear eye openings up to 28 Gbaud.
We present a 16-Gb/s transmitter composed of stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach-Zehnder modulator. The shows 9-dB extinction ratio 10.3-pJ/bit power consumption operates with 1.3 μm light. Penalties as low 0.5 dB were seen compared to 25-Gb/s LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> both monolithic metal-semiconductor-metal receiver reference at operation. also an analytic...
We present a monolithic CMOS-integrated nanophotonic transmitter with link sensitivity comparable 25-Gb/s commercial reference transmitter. Our CMOS shows error-free operation up to 32 Gb/s, and exhibits 4.8-dB extinction ratio 4.9-dB insertion loss at 25 Gb/s.
We propose a novel design concept for compact electro-optic modulators based on horizontally slotted ridge waveguide using ferroelectric barium titanate (BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) as the electro-optically active material. A low voltage-length product is achieved by concentrating propagating electromagnetic fields in BaTiO layer. Thus, high overlap between modulation electric and guided light achieved. The...
Monolithic CMOS photonics seeks to minimize total transceiver cost by simplifying packaging, design and test. Here we examine 25 Gb/s applications in the context of integrated transistor performance demonstrate a 4λ×25 reference design.
We develop an all-integrated optoelectromechanical system that operates in the superhigh frequency band. This is based on ultrahigh-Q slotted photonic crystal (PhC) nanocavity formed by two PhC membranes, one of which patterned with electrode and capacitively driven. The strong simultaneous electromechanical optomechanical interactions yield efficient electrical excitation sensitive optical transduction bulk acoustic modes membrane. These are identified up to a 4.20 GHz, their mechanical Q...