A5101836534- Chalcogenide Semiconductor Thin Films
- Metal and Thin Film Mechanics
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Copper-based nanomaterials and applications
- Advanced ceramic materials synthesis
- Diamond and Carbon-based Materials Research
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Laser-Matter Interactions and Applications
- High-Temperature Coating Behaviors
- Laser-Plasma Interactions and Diagnostics
- Ion-surface interactions and analysis
- Metallurgical and Alloy Processes
- ZnO doping and properties
- Catalytic Processes in Materials Science
- Laser-induced spectroscopy and plasma
- Optimal Power Flow Distribution
- Thermal Expansion and Ionic Conductivity
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Acoustic Wave Resonator Technologies
- Economic Growth and Productivity
- Smart Grid Energy Management
- Greenhouse Technology and Climate Control
Solibro Research (Sweden)
2013-2023
Vattenfall (Sweden)
2017
Umeå University
2015
Linköping University
2004-2012
We review common extensions of particle-in-cell (PIC) schemes which account for strong field phenomena in laser-plasma interactions. After describing the physical processes interest and their numerical implementation, we provide solutions several associated methodological algorithmic problems. propose a modified event generator that precisely models entire spectrum incoherent particle emission without any low-energy cutoff, imposes close to weakest possible demands on time step. Based this,...
Abstract Chalcopyrite-based solar cells have reached an efficiency of 23.35%, yet further improvements been challenging. Here we present a 23.64% certified for (Ag,Cu)(In,Ga)Se 2 cell, achieved through the implementation series strategies. We introduce relatively high amount silver ([Ag]/([Ag] + [Cu]) = 0.19) into absorber and implement ‘hockey stick’-like gallium profile with concentration Ga close to molybdenum back contact lower, constant in region closer CdS buffer layer. This kind...
In this study, the effect on thin film growth due to an anomalous electron transport, found in high power impulse magnetron sputtering (HiPIMS), has been investigated for case of a planar circular magnetron. An important consequence type transport is that it affects way ions are being transported plasma. It was significant fraction radially outwards vicinity cathode, across magnetic field lines, leading increased deposition rates directly at side cathode (perpendicular target surface)....
In this contribution, we show that silver substitution for copper in Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIGS) to form (Ag,Cu)(In,Ga)Se (ACIGS) leads a reduction of the voltage loss expressed as E xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> /q -V xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> . This, turn, higher device efficiencies compared similar CIGS devices without Ag. We report V at 814 mV...
ABSTRACT We report a new certified world‐record efficiency for thin‐film Cu(In,Ga)Se 2 ‐based photovoltaic sub‐modules of 17.4% (aperture area). The record the 16 cm , monolithically integrated, sub‐module has been independently confirmed by Fraunhofer ISE. device is result extensive co‐optimization all processing steps. During optimization process, strong focus put on scalability processes to cost‐effective mass production, as reflected, example, in deposition time and substrate...
Current and voltage have been measured in a pulsed high power impulse magnetron sputtering (HiPIMS) system for discharge pulses longer than 100 µs. Two different current regimes could clearly be distinguished during the pulses: (1) high-current transient followed by (2) plateau at lower currents. These results provide link between HiPIMS direct (DCMS) regimes. At applied negative voltages had characteristics of pulses, while values agreed with currents DCMS using same voltage. The behavior...
α-alumina coatings have been deposited directly onto cemented-carbide and Mo substrates at a temperature as low 650 °C using reactive high-power impulse magnetron sputtering (HiPIMS) of Al in an Ar/O2 gas mixture. The consisted plate-like crystallites, revealed by scanning electron microscopy. α phase growth was retained over the studied range substrate bias voltages (from floating potential up to -100 V), with films exhibiting slightly denser microstructure higher voltages. X-ray...
In this paper we present results of efficiency optimizations in conjunction with increased CIGS deposition rates. Furthermore, describe Solibro's recent technology improvements for higher module efficiencies and our roadmap further improvements. Our indicate that co-evaporation absorbers high can be realized at dynamic Various have recently been introduced production process, which led to a champion 14.4% (total area, externally confirmed). shows the is capable producing average 17% within...
The ion flux obtained during reactive magnetron sputtering of an Al target in Ar∕O2 gas mixtures was studied by energy-resolved mass spectrometry, as a function the total and O2 partial pressures. positive ions film-forming species exhibited bimodal energy distributions, both for direct current radio frequency discharges, with higher most likely originating from sputtered neutrals. For negative oxygen high-energy peak observed, corresponding to formed at surface accelerated towards substrate...
The interactions of Al, O, and ${\mathrm{O}}_{2}$ with different $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{Al}}_{2}{\mathrm{O}}_{3}\phantom{\rule{0.3em}{0ex}}(0001)$ surfaces have been studied using ab initio density functional theory methods. All three surface terminations obtainable by cleaving the bulk structure [single Al-layer $(\mathrm{AlO})$, double $(\mathrm{AlAl})$, O terminations] considered, as well a completely hydrogenated O-terminated surface. Adsorbed Al shows strong...
It is of high fundamental and practical importance to be able control the formation stability different crystalline phases alumina (Al2O3). In this study, we have used density functional theory methods investigate changes induced in thermodynamically stable α phase metastable θ as one eighth Al atoms are substituted for additives (Sc, W, Mo, Cr, Cu, Si, B). The calculations predict that strongly affect relative between two phases. Most tested shown shift towards, some cases completely...
This contribution evaluates a sequential post‐deposition treatment of Cu(In,Ga)Se 2 (CIGS) films, consisting 1) post‐sulfurization in elemental S‐atmosphere and 2) subsequent by heavy alkali fluorides (Alk‐PDT). First, the effect sulfurization step on corresponding solar cell performance is investigated optimum process parameters, leading to an efficiency improvement, are identified. Losses carrier collection observed after S‐incorporation attributed increased grain boundary (GB)...
The effects of substitutional additives on the properties and phase stability $\ensuremath{\theta}$- $\ensuremath{\alpha}$-alumina $({\mathrm{Al}}_{2}{\mathrm{O}}_{3})$, are investigated by density functional theory total energy calculations. dopants explored 5 at. % Cr, Mo, Co, As substituting for Al, respectively, $\mathrm{N}$ $\mathrm{S}$ $\mathrm{O}$, in $\ensuremath{\theta}$ $\ensuremath{\alpha}$ lattices. Overall, results show that it is possible to shift, even reverse, relative...
The significant gain in efficiency by a KF post deposition treatment (PDT) on small cells, observed several groups, can be scaled to full size modules. This is shown here for modules with PDT and module reaching 17.2% (aperture area efficiency, externally confirmed). Another important topic reducing the cell-to-module losses. Two different methods are presented compared, metal grid top of TCO an improved (ZnO:B). A sub-module (300×275 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Herein, the effect of initial copper content co‐evaporated Cu(In 1− x ,Ga )Se 2 (CIGS) absorber films on impact a post‐annealing step in elemental sulfur atmosphere is studied. The Cu concentration varied over wide range ([Cu]/[III] = CGI 0.57–1.23), allowing to identify composition‐dependent trends phase formation, chemical rearrangements, and solar cell performance after sulfurization. For all samples, ternary CuInS layer forms at surface. In addition, 1) incorporated randomly distributed...
Abstract In this work, we used K‐rich glass substrates to provide potassium during the coevaporation of Cu(In,Ga)Se 2 (CIGS) absorber layers. Subsequently, applied a postdeposition treatment (PDT) using KF or RbF some grown absorbers. It was found that presence K growth CIGS layer led cell efficiencies beyond 17%, and addition PDT pushed it 18%. The major finding work is observation discontinuous 100‐ 200‐nm‐deep Cu‐depleted patches in vicinity CdS buffer layer, correlated with layer. had no...