A5101894157- Ion-surface interactions and analysis
- ZnO doping and properties
- Diamond and Carbon-based Materials Research
- Integrated Circuits and Semiconductor Failure Analysis
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Electronic and Structural Properties of Oxides
- Particle accelerators and beam dynamics
- Silicon Nanostructures and Photoluminescence
- 2D Materials and Applications
- Copper-based nanomaterials and applications
- Particle Accelerators and Free-Electron Lasers
- Electron and X-Ray Spectroscopy Techniques
- MXene and MAX Phase Materials
- X-ray Spectroscopy and Fluorescence Analysis
- GaN-based semiconductor devices and materials
- Transition Metal Oxide Nanomaterials
- Advanced Semiconductor Detectors and Materials
- Gold and Silver Nanoparticles Synthesis and Applications
- Advanced Electron Microscopy Techniques and Applications
- Nuclear Physics and Applications
- Superconducting Materials and Applications
- Nonlinear Optical Materials Studies
Indian Institute of Technology Delhi
2014-2025
Inter-University Accelerator Centre
2000-2012
Indian Institute of Technology Indore
2012
European Synchrotron Radiation Facility
2012
Helmholtz-Zentrum Dresden-Rossendorf
2012
Gautam Buddha University
2012
Ludwig-Maximilians-Universität München
2004
This study details the creation of a write-once-read many (WORM) memory device utilizing cuprous chloride (CuCl) and poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF–HFP) polymers. Employing an in-plane configuration, deliberate 1:10 ratio CuCl to PVDF–HFP has been selected. aims establish in situ copper channel within device. The electrical response exhibits consistent retention over extended duration. WORM characteristics are attributed development multiple conducting filaments or...
While gold nanoparticles (Au NPs) are widely used as surface-enhanced Raman spectroscopy (SERS) substrates, their agglomeration and dynamic movement under laser irradiation result in the major drawback SERS applications, viz., repeatability of signals. We tune optical structural properties size- shape-modified Au NPs embedded a thin silicon nitride (Si3N4) matrix by intense electronic excitation with swift heavy ion (SHI) aim overcoming this classical disadvantage. demonstrate shape...
Abstract The Au partially embedded nanostructure (PEN) is synthesized by ion irradiation on an thin film deposited a glass substrate using 50 keV Ar ion. Scanning electron microscopy results show beam‐induced restructuring from irregularly shaped nanostructures (NSs) to spherical NSs, and further leads the formation of well‐separated nanoparticles. Higuchi's algorithm surface analysis utilized find evolution morphology with in terms Hurst exponent fractal dimension. PEN evidenced Rutherford...
Detailed experiments and theoretical calculations on electronic sputtering of Au thin films (5-200 nm) a quartz substrate are performed, revealing unusually large sputtering, dependent the thickness films. The dependence thermal conductivity (κe), electron-phonon coupling factor (g), lattice (κa) effective electron mean free path is taken into account in spike calculation for nanodimensional systems to elucidate combined effect grain size yield. simulation with refined parameters gives...
Room temperature ferromagnetism (RT-FM) is observed in ZnO/Si thin films on implantation of 200 keV Ni2+ ions at fluences 6×1015, 8×1015, and 2×1016 ions/cm2. RT-FM without any preheat or postheat treatment studied by alternating gradient magnetometry. The average grain size, oxygen vacancies, charge carrier concentration are found to be maximum the film implanted fluence 8×1015 ions/cm2, which also shows saturation magnetization (Ms). In all no extra crystalline phase (apart from ZnO)...
The demand for display devices increased very rapidly, and out of various techniques, field emission-based technology has huge potential to make next-generation devices. A conventional emitter uses single materials, which offer high quantum resistance between the materials substrate; thus, heterostructure formation can be used reduction by increasing density state near Fermi level. Therefore, in present work, black phosphorus (BP)/dysprosium hexaboride (DyB6) heterostructures were emission...
Intrinsic ferromagnetism at room temperature has been observed in ZnO/sapphire films by implantation of 200 keV Ni2+ ions with fluences 6×1015, 8×1015, 1×1016, and 2×1016 ions/cm2. Crystalline phases are identified glancing angle x-ray diffraction, which shows no extra phase the implanted films. Highest saturation magnetization (Ms) is film fluence 8×1015 ions/cm2 as examined superconducting quantum interference device magnetometry. This almost 80% transmittance across visible wavelength...
Abstract Present work reports the elongation of spherical Ni nanoparticles (NPs) parallel to each other, due bombardment with 120 MeV Au +9 ions at a fluence 5 × 10 13 ions/cm 2 . The NPs embedded in silica matrix have been prepared by atom beam sputtering technique and subsequent annealing. interaction as investigated cross-sectional transmission electron microscopy (TEM) shows strong dependence on initial particle size is explained basis thermal spike model. Irradiation induces change from...
Contrary to the electronic excitation induced phenomena of desorption and sputtering, we observed incorporation oxygen in a thin Fe film during its irradiation with swift heavy ions. It is that adsorbed diffuses film. The diffusion bulk manifestation extremely large energy deposition by incident shown experimentally high diffusivity due existence transient melt phase Fe.
We report x-ray absorption at Zn and Ni K-edges in 200 keV Ni2+ ion implanted ZnO/sapphire films. The implantation fluences are 6 × 1015 2 1016 ions/cm2, corresponding to 2% 7% a ZnO matrix. measurements reveal marginal substitution of both the films also rule out presence ferromagnetic metal clusters. M-H field cooled-zero cooled performed via SQUID magnetometry show that room temperature, saturation magnetization film is appreciably higher than film. origin ferromagnetism understood on...
This work is driven by the vision of engineering planar field emitters with ferromagnetic metal–insulator nanocomposite thin films, using swift heavy ion (SHI) irradiation method. FeCo nanoparticles inside SiO2 matrix, when subjected to SHI get elongated. Using this, we demonstrate here a emitter maximum current density 550 μA/cm2 at an applied 15 V/μm. The film, irradiated 5 × 1013 ions/cm2 fluence (5e13) 120 MeV Au9+ ions, shows very high electron emitting quantum efficiency in comparison...