A5025500668- Semiconductor materials and devices
- Ga2O3 and related materials
- Acoustic Wave Resonator Technologies
- Silicon Carbide Semiconductor Technologies
- Microwave Engineering and Waveguides
- Semiconductor Lasers and Optical Devices
- Thermal Radiation and Cooling Technologies
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Heat Transfer and Optimization
- Thermal properties of materials
- Ferroelectric and Piezoelectric Materials
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
University of California, Los Angeles
2023-2024
Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed heteroepitaxial growth GaN-on-SiC substrates, concerns have been raised about their impact on thermal transport across GaN/SiC interfaces. In this study, we present experimental measurements boundary conductance (TBC) interfaces with varying thicknesses layer (ranging from 0 to 73 nm) at different temperatures. Our findings reveal...
This work presents the first demonstration of a three layer periodically poled piezoelectric film (P3F) lithium niobate resonator. The proposed platform allows for high series 3dB quality factor (Q) resonances, including Q up to 811 at 12.98 GHz. trilayer stack employs use layers with alternating orientations on an intermediate amorphous bonding and sapphire substrate. enables order Lamb modes thanks comparatively large thickness when compared monolayer counterparts. shows ultra $f\dot Q$...
Smooth (< 0.5 nm rms) and subsurface damage-free (010) β-Ga2O3 was achieved with low-pressure chemical mechanical polishing. An applied pressure of 1 kPa along colloidal silica poromeric polyurethane polishing pads rotating at 30 rpm found to be the optimal parameters for β-Ga2O3. Using higher pressures typically employed in current literature induced damage substrates. Diffuse scatter intensity triple-axis x-ray rocking curves used determine presence lattice damage, which quantified...
Localized lattice distortions in GaN substrates can serve as nucleation sites for epitaxial macro-steps and macro-terraces. These detrimental macro-scale features give rise to optically hazy homoepitaxial surfaces. After nucleating, these macro-features grow laterally along the surface coalesce, leading significant coverage of wafer surface. Dot-core consisting a periodic array cores were used defect-engineered system, where dislocations are intentionally concentrated at cores. The high...
In this work, room temperature direct wafer bonding of complementarily oriented 128° Y-cut LiNbO 3 substrates is achieved with an interfacial layer less than 1 nm thick. This compares well to commercially available structures thickness and width particularly important for eventual multilayer sequences each on the order only tens nm. The (0114) indices describe surface plane wafers; wafers were bonded such that their in-plane [055.12] directions antiparallel. Due its trigonal crystal...