A5087669896- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Quantum-Dot Cellular Automata
- Photonic and Optical Devices
- Surface and Thin Film Phenomena
- Magnetic Properties and Applications
- Magnetic Field Sensors Techniques
- Integrated Circuits and Semiconductor Failure Analysis
Intel (United States)
2016-2022
University of Wisconsin–Madison
2018
Delft University of Technology
2018
QuTech
2018
Full-scale quantum computers require the integration of millions bits. The promise leveraging industrial semiconductor manufacturing to meet this requirement has fueled pursuit computing in silicon dots. However, date, their fabrication relied on electron-beam lithography and, with few exceptions, academic style lift-off processes. Although these techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether processing conditions...
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with isotopic purity greater than 99.92\%. Hall-bar transistors equivalent oxide thickness 17 nm fabricated academic cleanroom. A critical density for conduction $1.75\times10^{11}$ cm$^{-2}$ a peak mobility 9800 cm$^2$/Vs measured at temperature 1.7 K. The interface is characterized...
Atomic-scale disorder at the top interface of a Si quantum well is known to suppress valley splitting. Such may be inherited from underlying substrate and relaxed buffer growth, but can also arise due random SiGe alloy. Here, we perform activation energy (transport) measurements in Hall regime determine source affecting We consider three Si/SiGe heterostructures with nominally identical substrates different barriers well, including two samples pure-Ge interfaces. For all samples, observe...
Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array research across the globe. While several different physical implementations device level qubits are being investigated, semiconductor spin have many similarities to scaled transistors. In this article, we discuss device/integration full 300mm based qubit devices. This includes development (i) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Perhaps the greatest challenge facing quantum computing hardware development is lack of a high throughput electrical characterization infrastructure at cryogenic temperatures required for qubit measurements. In this article, we discuss our efforts to develop such line guide 300mm spin process development. This includes (i) working with supply chain create volume testing ecosystem, (ii) driving full wafer both transistor and dot statistics, (iii) utilizing resulting in key data comparable...
We determine the energy splitting of conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. probe valley dependence on both perpendicular magnetic field $B$ and Hall density by performing activation measurements regime over a large range filling factors. The mobility gap valley-split levels increases linearly with is strikingly independent density. data are consistent transport model which depends incremental changes $eB/h$ across edge strips, rather...
Quantum computing holds the promise of exponential speedup compared to classical for select algorithms and applications. Relatively small numbers logical quantum bits or qubits could outperform largest supercomputers. dots in Si-based heterostructures superconducting Josephson junctions are just two many approaches construct qubit. These, particular, bear similarities transistors interconnects used advanced semiconductor manufacturing. While initial results on few-qubit systems promising,...