Aobo Pu

ORCID: 0000-0002-0086-113X
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About
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Research Areas
  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Copper-based nanomaterials and applications
  • Semiconductor materials and interfaces
  • Perovskite Materials and Applications
  • solar cell performance optimization
  • Semiconductor Quantum Structures and Devices
  • Silicon and Solar Cell Technologies

UNSW Sydney
2015-2019

ARC Centre of Excellence in Advanced Molecular Imaging
2016-2018

Kesterite Cu2ZnSnS4 (CZTS) thin-film solar cells have drawn worldwide attention because of outstanding performance and earth-abundant constituents. However, problems such as coexistence complex secondary phases, the band tailing issue, short minority lifetime, bulk defects, undesirable alignment at p–n interfaces need to be addressed for further efficiency improvement. In this regard, Cd alloying shows promise dealing with some these problems. work, a beyond 11% efficient Cd-alloyed CZTS...

10.1021/acsenergylett.7b00129 article EN ACS Energy Letters 2017-04-03

Abstract Planar perovskite solar cells obtained by low‐temperature solution processing are of great promise, given a high compatibility with flexible substrates and perovskite‐based tandem devices, whilst benefitting from relatively simple manufacturing methods. However, ionic defects at surfaces usually cause detrimental carrier recombination, which links to one dominant losses in device performance, slow transient responses, notorious hysteresis. Here, it is shown that several different...

10.1002/aenm.201800138 article EN Advanced Energy Materials 2018-04-16

Highly efficient, ultrathin (~400 nm) pure sulfide kesterite Cu2ZnSnS4 (CZTS) solar cells have been realized by interface reaction route controlling and self-organized nano-pattern at the back contact. The Al2O3 intermediate layer introduced Mo/CZTS can effectively inhibit detrimental interfacial between CZTS Mo in initial stage of sulfurization, then turns into a nanopattern yielding nanoscale opening for electrical With this modification, traditional issues phase segregation (secondary...

10.1038/am.2017.103 article EN cc-by NPG Asia Materials 2017-07-01

Back contact modification plays an important role in improving energy conversion efficiency of Cu2ZnSnS4 (CZTS) thin film solar cells. In this paper, ultrathin carbon layer is introduced on molybdenum (Mo)-coated soda lime glass (SLG) prior to the deposition CZTS precursor improve back and therefore enhance cell efficiency. By introducing layer, short circuit current (Jsc) device increase for both nonvacuum (sol–gel) vacuum (sputtering) methods. Specifically, sol–gel based process, Jsc...

10.1021/acsami.5b05652 article EN ACS Applied Materials & Interfaces 2015-09-29

The ultrathin SnO2 intermediate layer deposited by a successive ionic adsorption and reaction (SILAR) method was introduced into the heterointerface between p-type Cu2ZnSnS4 (CZTS) absorber n-type CdS buffer for interface defect passivation in kesterite thin film solar cells. CZTS cells with layers show higher open circuit voltage (Voc) of 657 mV fill factor (FF) 62.8%, compared to its counterpart without layer, which have Voc 638 FF 52.4%, resulting improvement overall efficiency from 6.82%...

10.1021/acsaem.7b00044 article EN ACS Applied Energy Materials 2017-12-20

Despite remarkable progress in the performance of kesterite Cu2ZnSnS4 (CZTS)-based photovoltaic technology has been achieved, interface recombination and associated open-circuit voltage (Voc) deficit still dominate loss mechanism this technology. To alleviate heterojunction pure sulfide thin film solar cells, passivation structure at is required. In work, we developed an ultrathin nanometer-scale ZnS dielectric layer which readily formed situ CZTS/ZnCdS heterointerface during ZnCdS buffer...

10.1021/acs.chemmater.8b00009 article EN Chemistry of Materials 2018-05-23

Voltage deficit is the major challenge that pure sulfide kesterite devices have to face further improve efficiency. Different from selenide kesterite, Cu2ZnSnS4 has been reported form an unfavorable "cliff"-like conduction band offset (CBO) with traditional CdS buffer. This cliff-like CBO would facilitate significant heterojunction interface recombination and result in high velocity presence of defect density, leading voltage loss. If engineering ideal spike-like (within optimal range...

10.1109/pvsc.2016.7750017 article EN 2016-06-01

To tap onto the increasing predictive power, researchers are required to spend considerable time and efforts master a variety of solar cell simulation programs. Here we present unified parameter set for various Despite its simplicity, it allows users model homo-/hetero-/single-/multi-junction cells in 2D/3D. Typical simulations, including multiple splits, can be carried-out easily with only minimum users' input. By applying this parameters any programs (for example, Sentaurus), offer...

10.1109/pvsc.2018.8548198 article EN 2018-06-01

Heterojunction interface of the Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ZnSnS xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (CZTS) solar cells is one critical factors for performance loss, especially when applying Zn-based alternative buffer replacing CdS. In this work, CZTS/ZnCdS quality optimized by ammonia as complexing agent in precursor solution SILAR process ZnCdS deposition. Excess oxide and hydroxide impurities...

10.1109/pvsc.2018.8548125 article EN 2018-06-01

The ultrathin SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film, prepared by the successive ionic layer adsorption and reaction (SILAR) method, was applied between p-type Cu ZnSnS xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (CZTS) n-type CdS layers to passivate interface as well top section of CZTS grain boundaries. With aid this layer, electric properties have been significantly improved. device efficiency improved from...

10.1109/pvsc40753.2019.8980836 article EN 2019-06-01
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