A5041103697- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Battery Materials
- Silicon Nanostructures and Photoluminescence
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Advanced Photocatalysis Techniques
- Nanowire Synthesis and Applications
- Advanced Battery Technologies Research
- Electrocatalysts for Energy Conversion
- Supercapacitor Materials and Fabrication
- Advancements in Semiconductor Devices and Circuit Design
- Analytical Chemistry and Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Battery Materials and Technologies
- Electronic and Structural Properties of Oxides
- Advanced Chemical Sensor Technologies
- solar cell performance optimization
Slovak University of Technology in Bratislava
2015-2024
Information Technology Institute
2013-2019
Slovak Academy of Sciences
2011-2014
Institute of Electrical Engineering of the Slovak Academy of Sciences
2014
Institute of Informatics of the Slovak Academy of Sciences
2014
Wrocław University of Science and Technology
2013
Technische Universität Ilmenau
2011
University of Tartu
2011
Johannes Kepler University of Linz
2008
Lithium-ion (Li-ion) batteries with Ni-based cathodes are leading storage technology in the fields of electric vehicles and power-grid applications. NCA (LiNiCoAlO2) known for their troublesome degradation tendencies, this susceptibility to raises questions regarding safety usage. Hence, it is vital importance analyse via methods which applicable onboard systems, so that changes battery’s state health can be addressed accordingly. For purpose, crucial study stressed by various conditions...
Silicon (Si) is a promising anode material due to its high theoretical capacity and abundant presence as the second most common element in earth's crust. However, formation of an unstable solid-electrolyte interphase (SEI) significant volume expansion during lithiation result structural degradation, leading decrease cycle life for Si-based anodes. This paper reports on electrochemical performance silicon/graphite (Si/Gr) electrodes coated with nanometer-thick ZnO layers prepared by atomic...
Automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation based on the relaxation method is designed. The results are compared with device finite element model a direct an equivalent thermal <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$RC$</tex></formula> network. features limitations methods analyzed presented. designed developed Synopsys TCAD Sentaurus environment...
Abstract Ga 2 O 3 , a wide-bandgap semiconductor material, offers great potential for power and high-voltage electronic devices. We report on the growth of undoped α - β -phase using liquid-injection metal-organic chemical vapor deposition (LI-MOCVD) sapphire substrates. Using same precursor (gallium acetylacetonate) temperature 700 °C, phase selection was controlled by substrate orientation, where achieved m c -plane surface, respectively. As deduced from x-ray diffraction, -Ga films show...
Abstract Nickel-based sulfides (particularly NiS 2 ) are regarded as promising materials for highly efficient electrochemical generation and storage devices. The conventional fabrication methods of nanostructured X electrodes involve several complex steps using multiple precursors techniques. In this paper, the prepared by a plain one-step process one-zone sulfurization Ni foam. evolution electroactive 2D-nanoflakes reliant on temperature is studied. Scanning electron microscopy, x-ray...
By a simple femtosecond laser process, we fabricate metal-oxide/gold composite films for electrical and optical gas sensors. We designed dripple wavelength AWG-spectrometer, matched to the plasma absorption region of films. H2/CO absorptions fit well with AWG design multi detection sensor arrays.
Abstract This study presents different approaches to increase the sensing area of NiO based semiconducting metal oxide gas sensors. Micro- and nanopatterned laser induced periodic surface structures (LIPSS) are generated on silicon Si/SiO 2 substrates. The morphologies fabricated samples examined by FE SEM. We select with an intermediate Si 3 N 4 layer due its superior isolation quality over thermal for evaluating hydrogen acetone sensitivity a test sensor.
One of the biggest challenges communication networks is video transmission in real time. It requires high demands on available network capacity and transport mechanisms. Availability smart mobile devices with batteries, which keep terminal working for several hours, caused an increased interest research deployment wireless systems. The presented paper deals encoded H.264/AVC (Advanced Video Coding) coding standard through local area (WLAN) using programming environment OPNET Modeller (OM)....
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal−organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 with a thickness 120 nm root mean square surface roughness ~1 were using gallium-tetramethylheptanedionate (Ga(thd)3) tetraethyl orthosilicate (TEOS) as Ga Si precursor, respectively, c-plane sapphire substrates at 600 °C. In particular, the possibility to discriminate between ε κ-phase X-ray diffraction (XRD)...
Basic knowledge about the factors and mechanisms affecting performance of solar cells their identification is essential when thinking future improvements to device. Within this paper, we investigated current transport mechanism in GaAsN p-i-n grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined electro-optical structural properties a cell epitaxial structure correlated results temperature-dependent current-voltage measurements deep level transient...