A5011918252- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Thermal properties of materials
Institute of Electrical Engineering of the Slovak Academy of Sciences
2020-2024
Slovak Academy of Sciences
2022-2024
Institute of Chemistry of the Slovak Academy of Sciences
2022
We report on the growth of monoclinic β- and orthorhombic κ-phase Ga2O3 thin films using liquid-injection metal-organic chemical vapor deposition highly thermally conductive 4H-SiC substrates gallium (III) acetylacetonate or tris(2,2,6,6-tetramethyl-3,5-heptanedionato) (III). Both precursors produced β phase, while only use latter led to κ-Ga2O3. Regardless used precursor, best results for β-Ga2O3 were achieved at a temperature 700 °C O2 flows in range 600–800 SCCM. A relatively narrow...
Abstract Different phases of Ga 2 O 3 have been regarded as superior platforms for making new‐generation high‐performance electronic devices. However, understanding thermal transport in different nanoscale thin‐films remains challenging, owing to the lack phonon models and systematic experimental investigations. Here, conductivity (TC) boundary conductance (TBC) α ‐, β (001) κ ‐Ga thin films on sapphire are investigated. At ≈80 nm, measured TC (8.8 W m −1 K ) is ≈1.8 times ≈3.0 larger than...
Abstract Ga 2 O 3 , a wide-bandgap semiconductor material, offers great potential for power and high-voltage electronic devices. We report on the growth of undoped α - β -phase using liquid-injection metal-organic chemical vapor deposition (LI-MOCVD) sapphire substrates. Using same precursor (gallium acetylacetonate) temperature 700 °C, phase selection was controlled by substrate orientation, where achieved m c -plane surface, respectively. As deduced from x-ray diffraction, -Ga films show...
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal−organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 with a thickness 120 nm root mean square surface roughness ~1 were using gallium-tetramethylheptanedionate (Ga(thd)3) tetraethyl orthosilicate (TEOS) as Ga Si precursor, respectively, c-plane sapphire substrates at 600 °C. In particular, the possibility to discriminate between ε κ-phase X-ray diffraction (XRD)...
High-frequency wireless communication in consumer, defense, and space applications heavily relies on the use of compound semiconductor amplifiers. Typically, X to Ka bands (∼8–40 GHz) are covered by GaN GaAs-based devices, respectively, desired output power. high-electron mobility transistors (HEMTs) provide an unprecedented ultralow-noise high-frequency operation even at cryogenic temperatures, critically important for high-fidelity amplification weak qubit states quantum computing....
Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> is a promising ultra-wide bandgap (UWBG) semiconductor material for fabrication of high-power rectifiers and switching devices. This material, however, suffers from low lattice thermal conductivity, hampering the effective heat removal generated during device on-state. A possible solution represents hetero-epitaxial growth thin films...
Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is a promising ultra-wide bandgap (UWBG) semiconductor that was quickly recognised as suitable material for fabrication of optoelectronic devices or high-power rectifiers and switches, potentially greatly exceeding the capabilities mainstream Si, GaN, SiC. Despite many advantageous properties, large-area bulk Ga<sub>2</sub>O<sub>3</sub> substrates remain expensive, itself suffers from low lattice thermal conductivity – crucial an efficient heat...
Abstract A significant anisotropy in the electrical conductance was observed Si-doped α -Ga 2 O 3 /sapphire samples grown via liquid-injection metal organic chemical vapor deposition. Additionally to epitaxial diffraction, x-ray diffraction (XRD) revealed maxima related (010) β . Transmission electron microscopy, atomic force microscopy (AFM), and Raman spectroscopy of undoped with similar XRD pattern confirmed formation filaments film. In samples, conductive AFM temperature-dependent...
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Ga_{2}O_{3}$</tex> represents a promising semiconductor material for future high-power electronic devices manufacture. However, this suffers from low lattice thermal conductivity and advanced management approaches such as heteroepitaxial growth of on substrate with high conductivity, e.g. SiC are needed. Here, we report structural characterization monoclinic...
Gallium oxide belongs to wide bandgap semiconducting materials with high power and voltage capabilities. In this work, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Si-doped \ \beta-Ga_2 O_3$</tex> films were prepared using liquid injection metal organic chemical vapor deposition. Various growth conditions xmlns:xlink="http://www.w3.org/1999/xlink">$(O_{2}$</tex> flow in deposition chamber, Si-content precursor, choice of...