A5072628047- Thermal properties of materials
- GaN-based semiconductor devices and materials
- Geological and Geochemical Analysis
- Ga2O3 and related materials
- Semiconductor materials and devices
- Thermal Radiation and Cooling Technologies
- Atmospheric chemistry and aerosols
- Heat Transfer and Optimization
- Geochemistry and Geologic Mapping
- ZnO doping and properties
- Geochemistry and Geochronology of Asian Mineral Deposits
- Air Quality and Health Impacts
- Electronic and Structural Properties of Oxides
- Graphene research and applications
- Metal and Thin Film Mechanics
- Geological and Geophysical Studies
- Advancements in Solid Oxide Fuel Cells
- Acoustic Wave Resonator Technologies
- Diamond and Carbon-based Materials Research
- Hydrocarbon exploration and reservoir analysis
- Air Quality Monitoring and Forecasting
- Lattice Boltzmann Simulation Studies
- 2D Materials and Applications
- Atmospheric Ozone and Climate
- Advancements in Semiconductor Devices and Circuit Design
Wuhan University of Technology
2024-2025
Wuhan University
2022-2024
North China Electric Power University
2024
National University of Singapore
2024
Beijing Research Institute of Mechanical and Electrical Technology
2024
National Marine Environmental Forecasting Center
2024
Ministry of Natural Resources
2023-2024
Shanghai Skin Disease Hospital
2024
Tongji University
2024
Chongqing University of Posts and Telecommunications
2023
Hexagonal boron nitride (hBN) platelets are widely used as the reinforcing fillers for enhancing thermal conductivity of polymer-based composites. Since hBN have high aspect ratio and show a highly anisotropic property, hBNs-filled composites should be strongly associated with platelets' orientation. However, orientation effect has been explored less frequently due to technical difficulties in precontrol polymer matrix. In this paper, we report use magnetic fields assemble into various...
Abstract Hexagonal boron nitride (h-BN) has been predicted to exhibit an in-plane thermal conductivity as high ~ 550 W m −1 K at room temperature, making it a promising management material. However, current experimental results (220–420 ) have well below the prediction. Here, we report on modulation of h-BN by controlling B isotope concentration. For monoisotopic 10 h-BN, 585 is measured 80% higher than that with disordered concentration (52%:48% mixture and 11 B). The temperature-dependent...
[1] To evaluate the wintertime regional brown haze in northern China, trace gases and aerosols were measured at an urban site between 9 20 November 2009. Ion chromatography transmission electron microscopy (TEM) used to investigate soluble ions PM2.5 mixing state of individual particles. The contrasts clear hazy days examined detail. Concentrations primary including NO (55.62 ppbv), NO2 (54.86 SO2 (83.03 CO (2.07 ppmv) on 2 6 times higher than those days. In contrast, concentrations O3...
Hydrogen peroxide (H2O2) and organic peroxides play an important role in atmospheric chemistry, but knowledge of their abundances, sources, sinks from heterogeneous processes remains incomplete. Here we report the measurement results obtained four seasons during 2011–2012 at a suburban site background Hong Kong. Organic were found to be more abundant than H2O2, which is contrast most previous observations. Model calculations with multiphase chemical mechanism suggest contributions (primarily...
The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between and AlN is presented in this work. barrier was found to be the range 16 m2·K/GW, which a large improvement current state-of-the-art. While thick films failed adhere untreated films, treated hydrogen/nitrogen plasma retained layers. Clear differences ζ-potential measurement confirm surface modification due treatment. An increase non-diamond carbon initial grown pretreated seen...
Increased attention has been paid to the thermal management of β-Ga2O3 devices as a result large resistance that can present itself in part due its low intrinsic conductivity. A number die-level approaches exist could be viable for management. However, they have not assessed exclusively. Here, we explore limits various die level schemes on metal–semiconductor field-effect transistor using numerical simulations. The effects cooling device channel temperature were comprehensively investigated,...
Standard thermoreflectance-based measurements have been routinely taken on thin metal transducer (Au or Al) deposited samples. This is based the fundamental hypothesis that reflectance change (ΔR/R) of surface directly and linearly related to temperature (ΔT), within a wide but finite range (Trange). The quantitative study Trange has ignored for long time, which would possibly cause severe measurement issues impede possible new applications thermoreflectance are metals even non-metals. Here,...
Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding. However, the interlayer of interface and reduced layer thickness may affect thermal transport. In this study, temperature-dependent cross-plane conductivity 4H-SiC thin films effective boundary resistance (TBReff) SiC-on-SiC are measured by multiple-probe wavelength nanosecond transient thermoreflectance (MW-TTR). The film exhibits good quantitative agreement with calculation density functional theory...
Abstract We report polycrystalline diamond epitaxial growth on β -Ga 2 O 3 for device-level thermal management. focused establishing conditions accompanying the study of various nucleation strategies. A window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration , a conductivity 110 ± 33 W m −1 K and diamond/ boundary resistance 30.2 1.8 G were measured. The film stress managed by optimization techniques preventing delamination...
Hexagonal boron nitride (hBN) is attracting much attention due to its tremendous applications including nanophotonic and electronic devices, substrates for two-dimensional (2D) materials, heat management etc. To achieve the best device performance, large area hBN single crystals are required. Herein, large-area (>500 μm each), high-quality (defect density < 0.52/μm2) bulk grown from molten metal solutions with a temperature gradient. The narrow Raman line widths of intralayer E2g mode peak...
In this work, we study the thermal transport at β-Ga2O3/metal interfaces, which play important roles in heat dissipation and as electrical contacts β-Ga2O3 devices. A theoretical Landauer approach was used to model elucidate factors that impact these interfaces. Experimental measurements using time-domain thermoreflectance (TDTR) provided data for boundary conductance (TBC) between a range of metals create both Schottky ohmic contacts. From modeling experiments, relation metal cutoff...
Trench-fin MOSFETs, with their near-surface heat generation and the higher-surface area afforded by geometry for thermal management, represent a promising solution to problems frequently encountered in lateral β-Ga2O3 devices. Here, we investigate potential thermal-management strategies vertical trench-fin MOSFET through parametric analysis, offering recommendations on how best design device maximal current density excellent performance. Primarily, using thermally conductive dielectric over...
Abstract Different phases of Ga 2 O 3 have been regarded as superior platforms for making new‐generation high‐performance electronic devices. However, understanding thermal transport in different nanoscale thin‐films remains challenging, owing to the lack phonon models and systematic experimental investigations. Here, conductivity (TC) boundary conductance (TBC) α ‐, β (001) κ ‐Ga thin films on sapphire are investigated. At ≈80 nm, measured TC (8.8 W m −1 K ) is ≈1.8 times ≈3.0 larger than...