A5030691562- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Force Microscopy Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Lubricants and Their Additives
- Organic Electronics and Photovoltaics
- Ga2O3 and related materials
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Conducting polymers and applications
- Mechanical and Optical Resonators
- Semiconductor materials and interfaces
Technische Universität Braunschweig
2018-2021
Abstract The combination of inorganic semiconductors with organic thin films promises new strategies for the realization complex hybrid optoelectronic devices. Oxidative chemical vapor deposition (oCVD) conductive polymers offers a flexible and scalable path towards high-quality three-dimensional inorganic/organic structures. Here, hole-conductive poly(3,4-ethylenedioxythiophene) (PEDOT) grown by oxidative is used to fabricate transparent conformal wrap-around p-type contacts on microLEDs...
This article discusses the state-of-the-art of GaN-based inorganic/organic structures and devices, shows where hybrid approaches have allowed for new fields applications III-nitride material system. After a brief introduction to GaN, different strategies preparation GaN-organic are reviewed. Recent results from electronics optoelectronics with GaN system as inorganic component discussed in following sections. Finally, summary field sensing devices based on platform is given.
Abstract We report the controlled formation of organic/inorganic Schottky diodes by depositing poly(3,4-ethylenedioxythiophene) (PEDOT) on n-doped ZnO layers using oxidative chemical vapor deposition (oCVD). Current-voltage measurements reveal that show good thermal and temporal stability with rectification ratios 10 7 ideality factors ∼1.2. In frame a model, we identify mean barrier height at hybrid inorganic-organic interface 1.28 eV, which is consistent difference between work function...
In this paper, results on the optical properties and carrier dynamics in inorganic hybrid inorganic/organic semiconductor nanowire structures based ZnO GaN material systems, obtained by involved groups last years, are reviewed. First, recombination 3D GaN‐based microrod LED is analyzed discussed. particular, at high excitation densities close to damage threshold of studied. This followed a discussion functionalized with colloidal CdSe quantum dots (QDs) or carbon nanoparticles (C‐Dots)....
An existing phase-locked-loop (PLL) based contact-resonance measurement system is studied and optimized. Improvements to the electronics' circuit reduce both nonlinear behavior noise are realized experimentally tested. The improvements enable analyze signals even at highly damped vibrations of cantilever.