A5076577955- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Aluminum Alloys Composites Properties
- Advanced ceramic materials synthesis
- Multilevel Inverters and Converters
- Copper Interconnects and Reliability
- Induction Heating and Inverter Technology
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Advanced Surface Polishing Techniques
- Advanced DC-DC Converters
Centre National de la Recherche Scientifique
2017-2021
Université de Toulouse
2019-2021
Laboratoire Plasma et Conversion d'Energie
2017-2021
Institut National Polytechnique de Toulouse
2017-2021
École Nationale Supérieure d'Électrotechnique, d'Électronique, d'Informatique, d'Hydraulique et des Télécommunications
2017-2021
Université Toulouse III - Paul Sabatier
2020
Ocean Power Technologies (United States)
2020
IRT M2P
2018-2019
National Council for Scientific Research
2018-2019
During the short circuit of a vertical 4H-SiC power MOSFET, high gate current starts to flow through dielectric. We demonstrate that Schottky emission is main physical mechanisms.
This paper discusses first the discriminating phenomena yielding either a fail-to-short or fail-to-open circuit signature in 1200 V SiC power MOSFETs undergoing short-circuit electro-thermal stress. Since behavior is of particular relevance to application, goes on propose benchmarking number commercial devices, identifying single product which offers consistent characteristics with bias voltages up at least 50% nominal rating. For that device, thorough functional and structural...
The silicon carbide MOSFETs tend to become the standard for high-performance medium voltage power electronics in terms of compactness and efficiency. Although weakness its gate-oxide relatively low short-circuit time capability are known limitations, this device reveals interesting unique properties. In paper authors explore gate leakage-current behavior normal pre-damage operations as well conditions obtaining an atypical very fail-to-open mode which has never been observed with dies. These...
Silicon carbide (SiC) power MOSFETs exhibit some key differences compared with (Si) and IGBTs. In particular, both their intrinsic (i.e., material technology related) extrinsic device generation features-set implies, on the one hand, higher stress levels of single chip during a short-circuit and, other greater spread in value main electro-thermal parameters affecting transistor performance this stressful transient event. Thus, paper proposes thorough experimental analysis robustness parallel...
SiC MOSFETs have a low short circuit withstand time. To address this challenge, soft shut down and two original detection methods are proposed in paper, easily implemented based-on (ig, vgs) diagnosis with no direct time dependency. The first one is dedicated for using his gate-leakage thermal runaway current, the second more general faster gate-charge monitoring. Both experimentally validated compared terms of response-time robustness capability.