Takashi Hashimoto

ORCID: 0000-0002-0341-6381
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About
Contact & Profiles
Research Areas
  • Language and cultural evolution
  • Semiconductor materials and devices
  • Photonic and Optical Devices
  • Speech and dialogue systems
  • Evolutionary Game Theory and Cooperation
  • Advancements in Semiconductor Devices and Circuit Design
  • Radio Frequency Integrated Circuit Design
  • Semiconductor Lasers and Optical Devices
  • Opinion Dynamics and Social Influence
  • 3D IC and TSV technologies
  • Language, Metaphor, and Cognition
  • Evolutionary Algorithms and Applications
  • Modular Robots and Swarm Intelligence
  • Syntax, Semantics, Linguistic Variation
  • Biodiesel Production and Applications
  • Natural Language Processing Techniques
  • Semiconductor materials and interfaces
  • Intermetallics and Advanced Alloy Properties
  • Complex Systems and Time Series Analysis
  • Cognitive Science and Education Research
  • Lubricants and Their Additives
  • Microstructure and mechanical properties
  • Semiconductor Quantum Structures and Devices
  • Advancements in PLL and VCO Technologies
  • Game Theory and Applications

Tokyo Metropolitan University
2025

Osaka Metropolitan University
2025

Ricoh (Japan)
2018-2024

Japan Advanced Institute of Science and Technology
2014-2023

Advanced Institute of Industrial Technology
2023

Mitsubishi Electric (Japan)
2023

The University of Tokyo
1988-2020

Toyo Engineering (Japan)
2020

Komagino Hospital
2020

General Motors (India)
2004-2015

The characteristics of heavily ion‐implanted photoresist films were studied in relation to types photoresist, ion species, accelerating energies, and dose levels. By high energy, implantation it was observed that the optical transmission resist film exceedingly decreased becomes more mechanically, thermally, chemically resistant. Several experimental data indicated these results are due change disordered graphite. As an application this resist, a new photomask fabrication process is developed.

10.1149/1.2131665 article EN Journal of The Electrochemical Society 1978-08-01

Understanding mechanisms of intelligence human beings and animals is one the most important approaches to develop intelligent robot systems. Since such real-life systems are so complex, physical interactions between agents their environment social should be considered. Comprehension knowledge in many peripheral fields as cognitive science, developmental psychology, brain evolutionary biology, robotics also required. Discussions from an interdisciplinary aspect very for implementing this...

10.1109/sii.2010.5708327 article EN IEEE/SICE International Symposium on System Integration 2010-12-01

In this paper, we consider a issue that the reliable and inexpensive communication method in swarm robotics. The ants forage for preys by using pheromone trails. They lay down trails between nest. By detecting trail pheromone, they can find preys. Though do not have excellent intelligence, communicate with each other cooperate adding information to environment, like pheromone. This has merit an agent does need memorize place of We answer ldquoHow robots trail?rdquo. construct behavior...

10.1109/iros.2008.4650971 article EN 2011 IEEE/RSJ International Conference on Intelligent Robots and Systems 2008-09-01

A novel selective epitaxial growth (SEG) technology for fabricating the intrinsic SiGe-base layer of a double poly-Si self-aligned bipolar transistor has been developed. Selectively grown Si and SiGe-alloy layers were obtained by using Si/sub 2/H/sub 6/+GeH/sub 4/+Cl/sub 2/+B/sub 6/ gas system cold-wall ultra-high vacuum (UHV)/CVD. We have optimized conditions so that or SiGe grows selectively against 3/N/sub 4/ both on single crystalline structure consisting overhanging substrate. The is...

10.1109/16.297732 article EN IEEE Transactions on Electron Devices 1994-01-01

This paper describes a high maximum frequency of oscillation f/sub max/ self-aligned SiGe-base bipolar transistor technology, based on selective epitaxial growth (SEG) technology including graded Ge profile in an intrinsic base and link-base engineering using borosilicate glass (BSG) sidewall structure. The is new transistor, which we call Super Self-aligned Selectively grown SiGe Base (SSSB) transistor. 1st step the annealing (800/spl deg/C, 10 min) was performed for diffusion boron from...

10.1109/16.368044 article EN IEEE Transactions on Electron Devices 1995-03-01

10.1007/s40844-017-0071-8 article EN Evolutionary and Institutional Economics Review 2017-05-03

The development of metacognitive skills is important to train people work in the knowledge society, which requires creation value. However, within limited period university education, it not reasonable teach that come from a co-creation process requiring collaborative short-term educational program. Therefore, as first step towards acquiring skills, teaching method required allows students learn themselves their day-to-day activities. In this study, we focus on assistant (TA) one who can...

10.1016/j.procs.2016.09.107 article EN Procedia Computer Science 2016-01-01

10.1016/s0142-1123(96)00042-4 article EN International Journal of Fatigue 1996-11-01

Impact of oil-derived ash on the pressure drop continuous regeneration-type diesel particulate filter (CR-DPF) was investigated through 600hrs running test at maximum power point a 6.9L engine, which meets Japanese long-term emission regulations enacted in 1998, using approximately 50ppm sulfur content fuel. Sulfated oils were varied as 0.96, 1.31, and 1.70 mass%, respectively. During test, exhaust CR-DPF measured. And after ventilation resistance also evaluated before baking process,...

10.4271/2004-01-1887 article EN SAE technical papers on CD-ROM/SAE technical paper series 2004-06-08

A P-i-N SiGe/Si superlattice photodetector with a planar structure has been developed for Si-based opto-electronic integrated circuits. To make the structure, novel selective epitaxial growth technology which uses cold wall ultrahigh-vacuum/chemical vapor deposition newly developed. The an undoped 30-/spl Aring/ Si/sub 0.9/Ge/sub 0.1//320-/spl Si, 30 periods, absorption layer, 0.1-/spl mu/m P-Si buffer and 0.2-/spl P/sup +/-Si contact layer on bonded silicon-on-insulator (/spl eta//sub...

10.1109/16.563356 article EN IEEE Transactions on Electron Devices 1997-04-01

Two Si-Analog IC's, a preamplifier IC and decision IC, for 20 Gb/s optical receiver have been developed using SiGe-base bipolar transistors having 60 GHz maximum cutoff frequency. The employing dual feedback loop increases the -3 dB bandwidth up to 19 GHz. A composed of gain controllable amplifier with bias stabilization circuit D-F/F, operated at 200-mVp-p input sensitivity.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

10.1109/4.340434 article EN IEEE Journal of Solid-State Circuits 1994-01-01

Hybrid manufacturing (HM), which combines additive (AM) and subtractive (SM), is effective for the fabrication of thin-walled complex shapes, such as impeller blades. Generally, a process planning HM to build near-net shape through AM finish its surface SM. However, in this approach, cutting tools are limited with long tool lengths small diameters avoid collisions between workpiece. In addition, shapes also limited. Therefore, one possible solution alternate SM processes multiple times....

10.20965/ijat.2023.p0356 article EN cc-by-nd International Journal of Automation Technology 2023-07-04

A 60-GHz cutoff frequency (f/sub T/) super self-aligned selectively grown SiGe-base (SSSB) bipolar technology is developed. It applied to 20-Gb/s optical fiber transmitter ICs. Self-aligned transistors mutually isolated by using a BPSG-filled trench were fabricated on bond-and-etchback silicon-on-insulator (SOI) substrate reduce the collector-substrate capacitance C/sub CS/. The SiGe base was prepared selective epitaxial growth (SEG) technology. 0.4-/spl mu/m wide emitter used junction...

10.1109/16.772473 article EN IEEE Transactions on Electron Devices 1999-07-01

A new parasitic capacitance reduction technologies, utilizing a Gate-side Air-gap Structure (GAS), has been developed for MOSFETs. The GAS in which 5-nm-wide air-gap was formed next to the gate reduced fringe by half. Hence, delay time 4.8 psec at FO=1 and 16 FO=3 0.25 /spl mu/m CMOS, power consumption lowered compared conventional structure. We also propose pocket implantation through suppress short channel effects with only slight increase junction capacitance.

10.1109/vlsit.1996.507785 article EN 2002-12-23

10.1016/0036-9748(74)90140-9 article EN Scripta Metallurgica 1974-04-01

It has been suggested that hierarchically structured symbols, a remarkable feature of human language, are produced via the operation recursive combination. Recursive combination is frequently observed in behavior, not only language but also action sequences, mind-reading, technology, et cetera.; contrast, it rarely animals. Why humans use this operation? What adaptability combination? We aim (1) to identify environmental feature(s) which effective for survival and reproduction, facilitated...

10.3389/fpsyg.2018.01512 article EN cc-by Frontiers in Psychology 2018-09-19
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