Quanjiang Lv

ORCID: 0000-0002-0387-2483
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About
Contact & Profiles
Research Areas
  • GaN-based semiconductor devices and materials
  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Photocathodes and Microchannel Plates
  • Perovskite Materials and Applications
  • Gas Sensing Nanomaterials and Sensors
  • Ammonia Synthesis and Nitrogen Reduction
  • Advanced Semiconductor Detectors and Materials
  • Hydrogen Storage and Materials
  • MXene and MAX Phase Materials
  • Semiconductor Quantum Structures and Devices
  • Electrocatalysts for Energy Conversion
  • 2D Materials and Applications
  • Advanced Thermoelectric Materials and Devices
  • Copper-based nanomaterials and applications
  • Analytical Chemistry and Sensors
  • Metal and Thin Film Mechanics
  • Nonlinear Optical Materials Studies
  • Electronic and Structural Properties of Oxides
  • Advanced Photocatalysis Techniques
  • Nanowire Synthesis and Applications
  • Transition Metal Oxide Nanomaterials
  • Advanced Battery Materials and Technologies

Jiangsu University
2022-2025

Nanchang University
2018-2020

People's Liberation Army 401 Hospital
2012

The potential of multicolor semiconductor electroluminescence in solid-state lighting has been extensively pursued due to the energy-saving and smart-lighting as compared conventional phosphor-converted white light sources. Here, we demonstrate a highly efficient 525 nm GaN-based green light-emitting diode (LED) with sandwich-like multiple quantum well (MQW) structure grown on patterned Si(111) substrates. Performance enhancement can be achieved by adjusting thicknesses three barriers close...

10.1021/acsphotonics.8b01040 article EN ACS Photonics 2018-12-03

Infrared focal plane array (IRFPA) detector, a key research focus in next-generation infrared detection technology, plays crucial role optoelectronic sensing. Here, we report the integration and reliability of PbSe-based IRFPA employing row-column scanning readout architecture. The design features surface passivation layer through-hole structures to ensure robust electrical connectivity, enhancing both stability performance. with dimensions 3.5 mm×3.5 mm, pixel size 200 μm <teshuzifu>x...

10.7498/aps.74.20241761 article EN Acta Physica Sinica 2025-01-01

The development of multifunctional electrocatalysts with high performance for electrocatalyzing urea oxidation-assisted water splitting is great significance energy-saving hydrogen production. In this work, we demonstrate a novel heteroatom engineering strategy B-doped Co as electrocatalyst the evolution reaction (HER), oxygen (OER), and oxidation (UOR). Density functional theory (DFT) results suggest that B dopant can efficiently adjust electron reconstruction exposure sites nearby...

10.1021/acsami.4c11228 article EN ACS Applied Materials & Interfaces 2024-11-19

We investigate the polarization-induced doping in gradient variation of Al composition p-Al 0.75 Ga 0.25 N/Al x 1− N hole injection layer (HIL) for deep ultraviolet light-emitting diodes (DUV-LEDs) with an ultra-thin p-GaN (4 nm) ohmic contact capable emitting 277 nm. The experimental results show that external quantum efficiency (EQE) and wall plug (WPE) structure graded from to 0.55 HIL reach 5.49% 5.04%, which are improved significantly by 182% 209%, respectively, compared 0.45,...

10.1088/1674-1056/ac9de7 article EN Chinese Physics B 2022-10-27

In this work, we present a strategy for the space-confined chemical vapor transport synthesis of quasi-one-dimensional surface-passivated monocrystalline PNRs on silicon substrate.

10.1039/d2cc06813c article EN Chemical Communications 2023-01-01
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