A5093027117- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Radio Frequency Integrated Circuit Design
- Ga2O3 and related materials
- Semiconductor materials and devices
University of Padua
2023-2024
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-wave power amplifiers requires gate length scaling below 150 nm: in order control short-channel effects, the gate-to-channel distance must be decreased, and device epitaxial structure has completely redesigned. A high 2-D electron gas (2DEG) carrier density can preserved even with a very thin top barrier layer by substituting AlGaN AlN, InAl(Ga)N, or ScAlN. Moreover, prevent interaction hot electrons...
A full characterization of deep level effects in N-polar GaN-based HEMTs has been carried out by means Drain Current Transient Spectroscopy (DCTS). The effect ohmic contacts (alloyed or regrown), composition AlGaN cap layer, and the quality epitaxial layers have studied. We show that occurrence an "antidispersion" effect, i.e. a transient increase I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> during pulsed measurements, is due to...
The kink effect in field-effect transistors (FETs) consists a sudden increase drain current, I D , during voltage sweep and leading to higher saturation value.We report new experimental data concerning the dynamic behavior of "kink" AlGaN/GaN HEMTs correlate them with deep levels.The results demonstrate role Poole-Frenkel determining occurrence identify conditions that make it observable.