A5051327120- Phase-change materials and chalcogenides
- Advanced Memory and Neural Computing
- Magnetic properties of thin films
- Transition Metal Oxide Nanomaterials
- Public Administration and Governance
- Magnetic and transport properties of perovskites and related materials
- Chalcogenide Semiconductor Thin Films
- Magnetic Properties and Applications
- Parallel Computing and Optimization Techniques
- Turkish Urban and Social Issues
- Legal Issues in Turkey
- Shape Memory Alloy Transformations
- ZnO doping and properties
- Nanoparticles: synthesis and applications
- Law, logistics, and international trade
- Theoretical and Computational Physics
- Quantum many-body systems
- Electrochemical Analysis and Applications
- Multiferroics and related materials
- Nonlinear Optical Materials Studies
- Multi-Criteria Decision Making
- Advanced Condensed Matter Physics
- Electronic Packaging and Soldering Technologies
- Electronic and Structural Properties of Oxides
- Medicinal Plants and Neuroprotection
Karamanoğlu Mehmetbey University
2015-2024
Sivas Cumhuriyet Üniversitesi
2022
Institut Jean Lamour
2019
Université de Lorraine
2019
Centre National de la Recherche Scientifique
2019
Boğaziçi University
2015-2018
New York University
2015
Western Digital (United States)
2015
Recently discovered exotic magnetic configurations, namely solitons appearing in the presence of bulk or interfacial Dzyaloshinskii-Moriya Interaction (i-DMI), have excited scientists to explore their potential applications emerging spintronic technologies such as race-track memory, spin logic, radio frequency nano-oscillators and sensors. Such studies are motivated by foreseeable advantages over conventional micro-magnetic structures due small size, topological stability easy spin-torque...
Abstract Ternary oxides are currently emerging as promising materials for optoelectronic devices and spintronics, surpassing binary in terms of their superior properties. Among these, zinc stannate (Zn 2 SnO 4 ) stands out due to its stability attractive physical characteristics. However, despite outstanding attributes, there is a need further develop magnetic properties spintronic applications. In this study, Ni-doped Zn thin films were synthesized using the sol–gel method, characteristics...
The high contrast in the electrical resistivity between amorphous and crystalline states of a phase change material can potentially enable multiple memory levels for efficient use data storage medium. We report on our investigation role current injection site geometry (circular square) stabilizing such intermediate within nanoscale single-phase system (Ge2Sb2Te5). have developed three dimensional multiphysics model, which includes kinetics, electrical, thermal, thermoelectric, percolation...
Resistance drift of the amorphous states multilevel phase change memory (PCM) cells is currently a great challenge for commercial implementation reliable multiple-bit-per-cell technology. This paper reports observation stable intermediate state PCM cell that achieved through nonuniform heating with square current injection top electrode. Drift coefficient an order magnitude lower than reset and has weaker temperature dependence. Using finite-element simulations analytical model subthreshold...
Strain modulation during a two-way shape memory effect (TWSME) in sputtered nitinol NiTi is used to reliably induce and switch by 90° uniaxial magnetic anisotropy of 20 nm thick Ni film the thermal cycle from 300 K 400 K. strain its distribution are carefully measured digital image correlation tensile prestrain subsequent temperature cycles order compare with extracted magnetometry measurement transmission electron microscopy. In NiTi/Ni bilayer, variation 2.7% TWSME generates 1.3% Ni, which...
Multiple-bit-per-cell phase-change memory (MPCM) has emerged as a promising solution to address the escalating demands for high-density, low-power, and fast-access in modern computing data storage systems. This paper presents novel device design aimed at enabling multiple bits per cell memory, thereby significantly enhancing density while maintaining performance reliability. Leveraging innovative material compositions advanced fabrication techniques, proposed demonstrates potential push...
Considering the rapid developments in nanotechnology, scientific research field of nanotoxicology is required order to prevent dangers nanotechnology on human health. For this purpose, we tested cytotoxic effect ZnO nanoparticle (NP), which included many cosmetic products, keratinocyte cells (HaCaT). In addition, evaluated potentially inhibit with an aquatic plant, Alternanthera reineckii Briq. produced by tissue culture method. The nodal explants A. were cultured Murashige & Skoog basal...
The first judgments for the applications reviewed by Constitutional Court came in 2012 and these initial were leading given Sections to establish unity of case-law. Most individual are related grounds inadmissibility. which similar concluded Commissions. However, if an application is declared admissible, then review on merits carried out it decided whether a right violated or not. In preliminary applications, such administrative decisions as separation, joinder strike off have been given. If...
According to Article 47, paragraph (5) of Law Nr. 6216, individual applications must be filed within thirty days after the exhaustion legal remedies or, if no remedy is provided for a violation, being informed said violation.If it determined at stage preliminary examination carried out by application bureau that an not then shall rejected on administrative grounds due time-limit expiration.If any deficiency in form or its annexes examination, applicant granted fifteen-day time period...
Generally, a semiconductor device using chalcogenide elements as fundamental components is considered potentially revelation technology for future ultra-high density data storage technology. These kind of having high contrast between 0 and 1 logic states brought out the possible application idea multiple levels in single bit an effort to boost density. The potential stabilization resistance enables several cell (such 00, 01, 10, 11 levels). I report on investigation role current injection...
A three dimensional finite element model calculation was constructed, which includes different submodels, all as a function of temperature, using an iterative approach, to investigate permalloy artificial spin ice network with square geometry on thermal annealing while applying voltage pulse. Magnetization is also included into the simulation equation defining change magnetization temperature. The maximum temperature obtained around sharp corners due current crowding, and therefore, minimum...