A5064154820- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Perovskite Materials and Applications
- X-ray Diffraction in Crystallography
- Conducting polymers and applications
- Crystallization and Solubility Studies
- Semiconductor materials and devices
- Solidification and crystal growth phenomena
- Silicon Nanostructures and Photoluminescence
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Quantum Dots Synthesis And Properties
- solar cell performance optimization
- Analog and Mixed-Signal Circuit Design
- Inorganic and Organometallic Chemistry
- Laser Material Processing Techniques
- Theoretical and Computational Physics
- Laser-induced spectroscopy and plasma
- CCD and CMOS Imaging Sensors
- Aluminum Alloy Microstructure Properties
Soochow University
2020-2024
Northwestern Polytechnical University
2023
King Abdullah University of Science and Technology
2017-2021
Australian National University
2012-2017
Shaanxi Normal University
2016
Tohoku University
2010-2012
Institute for Materials Research, Tohoku University
2010-2012
Hefei University of Technology
2012
Abstract The performance of state‐of‐the‐art perovskite solar cells is currently limited by defect‐induced recombination at interfaces between the and electron hole transport layers. These defects, most likely undercoordinated Pb halide ions, must either be removed or passivated if cell efficiencies are to approach their theoretical limit. In this work, a universal double‐side polymer passivation introduced using ultrathin poly(methyl methacrylate) (PMMA) films. Very high‐efficiency (≈20.8%)...
Thin TiO2 films are demonstrated to be an excellent electron-selective contact for crystalline silicon solar cells. An efficiency of 21.6% is achieved cells featuring a full-area -based contact.
Abstract Dopant‐free, carrier‐selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron‐selective titanium dioxide (TiO 2 ) contacts, one the most promising dopant‐free CSC technologies, have been successfully implemented into an over 21%. Here, we report further progress TiO for and present assessment their industrial feasibility. With improved contact quality cell processing, a remarkable 22.1% has achieved using n...
Abstract Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, broadband transparency should be improved, especially at front device. Here, excellent properties Zr‐doped indium oxide (IZRO) applications, with improved near‐infrared (NIR) response, compared conventional tin‐doped (ITO) electrodes, are shown. Optimized...
Abstract Minimizing carrier recombination at contact regions by using carrier‐selective materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating c‐Si cells is presented. Tantalum nitride (TaN x ) thin films deposited atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties surface, due their small...
Abstract High carrier recombination loss at the contact regions has become dominant factor limiting power conversion efficiency (PCE) of crystalline silicon ( c ‐Si) solar cells. Dopant‐free carrier‐selective contacts are being intensively developed to overcome this challenge. In work, vanadium oxide (VO x ) deposited by atomic layer deposition (ALD) is investigated and optimized as a potential hole‐selective for ‐Si ALD VO films demonstrated simultaneously offer good surface passivation an...
High-quality carrier-selective contacts with suitable electronic properties are a prerequisite for photovoltaic devices high power conversion efficiency (PCE). In this work, an efficient electron-selective contact, titanium oxynitride (TiOx Ny ), is developed crystalline silicon (c-Si) and organic devices. Atomic-layer-deposited TiOx demonstrated to be highly conductive proper work function (4.3 eV) wide bandgap (3.4 eV). Thin films simultaneously provide moderate surface passivation enable...
Advanced doped-silicon-layer-based passivating contacts have boosted the power conversion efficiency (PCE) of single-junction crystalline silicon (c-Si) solar cells to over 26%. However, inevitable parasitic light absorption doped layers impedes further PCE improvement. To this end, alternative based on wide-bandgap metal compounds (so-called dopant-free (DFPCs)) attracted great attention, thanks their potential merits in terms loss, ease-of-deposition, and cost. Intensive research activity...
Abstract Extensive research has focused on developing wide‐bandgap metal compound‐based passivating contacts as alternatives to conventional doped‐silicon‐layer‐based mitigate parasitic absorption losses in crystalline silicon (c‐Si) solar cells. Herein, thermally‐evaporated aluminum halides (AlX)‐based electron‐selective for c‐Si cells are investigated. A low contact resistivity of 60.5 and 38.4 mΩ cm 2 is obtained the AlCl x /n‐type (n‐Si) AlF /n‐Si heterocontacts, respectively, thanks...
Abstract High‐efficiency silicon solar cells featuring doped layer‐based carrier‐selective contacts suffer from optical losses due to parasitic absorption. In this work, a high‐performance electron‐selective contact with high transparency is presented, consisting of intrinsic hydrogenated amorphous (a‐Si:H) passivation layer, atomic‐layer‐deposited conductive magnesium oxide (MgO x ) and low‐work‐function aluminium zinc (AZO). The a‐Si:H/MgO /AZO stack demonstrated be an excellent...
Efficient and stable organic-silicon heterojunction solar cells are highly desirable. In this work, solution-processed poly(3,4-ethylenedioxythiophene): perfluorinated sulfonic acid (PEDOT:F) is investigated as hole-selective contact for crystalline silicon (c-Si) cells....
Polysilicon passivating contacts, consisting of a stack tunnel-oxide and doped polysilicon layers, can simultaneously provide excellent surface passivation low contact resistivity for silicon solar cells. Nevertheless, the microscopic interfacial characteristics such contacts are not yet fully understood. In this work, by investigating evolution under increasing annealing temperatures, we unveil these characteristics. Before annealing, find that Si O atoms within layer mostly unsaturated,...
Highly efficient perovskite solar cells (PSCs) fabricated in the classic n-i-p configuration generally employ triphenylamine-based hole-transport layers (HTLs) such as spiro-OMeTAD, PTAA, and poly-TPD. Controllable doping of has been critical to achieve increased conductivity high device performance. To this end, LiTFSI/tBP subsequent air exposure is widely utilized. However, approach often leads low stability reproducibility. Departing from point, we introduce Lewis acid...
Carrier-selective contacts have become a prominent path forward toward efficient crystalline silicon (c-Si) photovoltaics. Among the proposed contacting materials, organic materials may offer simplified and low-cost processing compared with typical vacuum deposition techniques. Here, branched polyethylenimine (b-PEI) is presented as an electron-transport layer (ETL) for c-Si solar cells. The incorporation of b-PEI interlayer between c-Si(n) Al leads to low contact resistivity 24 mΩ cm2. A...
Slot‐die coating is highly promising for scaled deposition of metal halide perovskite thin films. However, the power conversion efficiencies (PCEs) slot‐die‐prepared solar cells (PSCs) still lag behind their spin‐casted counterparts. To resolve this issue, crystal size and quality slot‐die‐coated methylammonium lead triiodide (MAPbI 3 ) films are dramatically improved via additive engineering using potassium thiocyanate (KSCN). The modified micrometer‐thick have an average grain ≈11 μm...
Abstract The development of high‐performance dopant‐free silicon solar cells is severely bottlenecked by opaque electron selective contact. In this paper, high transmittance (80.5% on glass) and low work function (2.92 eV) lithium fluoride (LiF x )/MgF O y contact stack tailoring the composition MgF hybrid film reported. This structure exhibits a conductivity (2978.4 S cm −1 ) resistivity (2.0 mΩ 2 ). element profile LiF /MgF measured reaction kinetics analyzed. As proof‐of‐concept, applied...
Extensive efforts have been made to develop wide‐bandgap metal compound‐based carrier‐selective contacts improve the performance of crystalline silicon (c‐Si) solar cells, by mitigating deleterious effects metal–Si contact directly. Herein, thermally evaporated strontium oxide (SrO x ) is exploited as an electron‐selective for c‐Si cells. Benefiting from a lower work function (3.1 eV) SrO , strong downward band‐bending achieved at n‐type c‐Si/SrO interface, enabling transport characteristic....
Abstract The presence of a high density defects at the perovskite/electron transport layer (ETL) interface results in significant nonradiative recombination losses, thus impeding efficiency enhancement perovskite/silicon tandem solar cells (TSCs). In this investigation, metallocene‐based molecule, cobalt (III) dichlorophene hexafluorophosphate (CcPF 6 ), is employed for perovskite surface passivation. To maximize its efficacy, molecule dissolved mixed solvent acetonitrile and chlorobenzene,...
Abstract Wide‐bandgap metal compound‐based dopant‐free passivating contacts have been explored to fabricate crystalline silicon (Si) solar cells mitigate the high carrier recombination rate of metal‐Si contact directly. Here, an over 4‐nm‐thick single‐layer strontium fluoride (SrF x ) and a double‐layer SrF /lithium (LiF) films deposited by facile vacuum thermal evaporation are developed act as high‐performance electron‐selective contacts. with ultra‐low work function (2.8 eV) induces strong...