A5012356029- Multiferroics and related materials
- Ferroelectric and Piezoelectric Materials
- Acoustic Wave Resonator Technologies
- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Liquid Crystal Research Advancements
- Semiconductor materials and devices
- Underwater Acoustics Research
- Solid-state spectroscopy and crystallography
- Perovskite Materials and Applications
- Advanced Condensed Matter Physics
University of Wisconsin–Madison
2016-2025
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding phenomena but also enabling functional device fabrication. However, polarized typically exhibit complicated multi-domain states, desirable for optoelectronic performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain design single-domain, BaTiO3 films. Theoretical calculations predict key role BaTiO3/PrScO3 [Formula: see text] substrate...
Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE)/ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low-power multifunctional devices. Relaxor-FEs, such as (1 − x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates because of their giant piezoelectricity. However, thin films PMN-PT suffer from substrate clamping, which substantially reduces piezoelectric in-plane strains. Here, we demonstrate...
Abstract Strain-coupled magnetoelectric (ME) phenomena in piezoelectric/ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain manipulates the magnetization of ferromagnetic film. In-plane rotation with an electric field across film thickness has been challenging due to large reduction in-plane piezoelectric by substrate clamping, two-terminal requirement anisotropic strain. Here we show that these limitations can be overcome...
Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation, which facilitated by the presence of various crystal symmetries compositions near a morphotropic phase boundary. Relaxor-ferroelectric thin films, necessary low-voltage applications, suffer reduction in piezoelectric response due clamping passive substrate. To understand microscopic behavior this adverse phenomenon,...
Reversible control over the electrical properties of two-dimensional electron gas (2DEG) in oxide heterostructures is a key capability enabling practical applications. Herein, we report an efficient method to reversibly tune charge carrier density 2DEG by surface modification. We demonstrate both increasing and decreasing LaAlO3/SrTiO3 interface via application functional phosphonic acids with molecular dipoles pointing either toward or away from interface, respectively. In addition, case...
Understanding magnetic domain structures and their responses to electric fields in multiferroic heterostructures is critical the design of electric-field-driven spintronic devices. High-throughput finite-element phase-field simulations are performed probe piezoelectric strain anisotropy its relaxation, applied voltages as function in-plane dimensions thickness Ni nanoislands grown on a Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) membrane. The found increase with aspect ratio, but it can be...
Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics, like (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates due to their giant piezoelectricity. But thin films of PMN-PT suffer from substrate clamping which substantially reduces piezoelectric in-plane strains. Here we present the first...