We have fabricated an all‐polymer battery utilizing the redox properties of electrically conducting polymers for anode and cathode in conjunction with ionic polymer gel electrolyte. The consist pyrrole electropolymerized onto a graphite fiber substrate resulting high‐surface‐area, composite electrode. A electrolyte, based on polyacrylonitrile, was solution cast electrodes to form cell. This system exhibits specific charge capacity electroactive mass discharging 0.4 V. These cells show no...

Novel composite electrode structures have been fabricated by single‐step electropolymerization of polypyrrole onto a porous graphite fiber matrix. The substrate provides lightweight structure with high surface area. available charge capacity the electrodes was proportional to time and mass electroactive polymer reversible capacities in excess specific , independent mass. rate extraction dependent on morphology electrode. In test cells using polypyrrole/graphite anode polypyrrole‐polystyrene...

The influence of Bi- or Ba-containing compounds on the rechargeability in alkaline electrolytes has been investigated with AA cells containing cylindrical cathodes and flooded thin-film type cathodes. In addition to electrochemical evaluation cells, discharged were analyzed by X-ray diffraction after washing drying. incorporation bismuth barium into was found improve cell cyclability, which is partly due suppression electrochemically inactive phases such as birnessite hausmannite A series...

The authors report the deposition of 4.5-nm-thick cobalt (II) oxide on SiO2/Si(001) and MgO(001) substrates at 180–270 °C by atomic layer using bis(N-tert-butyl-N′-ethylpropionamidinato) water as coreactants. resulting CoO film is smooth carbon-free. can be reduced to Co metal hydrogen or deuterium gas 400–500 in a vacuum furnace, but high temperature processing causes dewetting, leading discontinuous islands rather than continuous films. Two low (∼200 °C) reduction methods are reported:...

Patterned, crystalline BaTiO3 (BTO) films were formed directly on STO(001) surfaces using atomic layer deposition and restricting Ba Ti precursor adsorption to by passivating regions of the substrate with a polystyrene blocking layer. Patterns prepared spin-coating onto STO(001), UV-crosslinking polystyrene, rinsing away uncrosslinked toluene. Amorphous 9–12 nm thick BTO deposited at 225 °C polystyrene-patterned surfaces. These crystallized upon annealing elevated temperatures. Atomic force...

We report area-selective deposition of palladium using sequential area-blocking and area-activation ALD processes. Thermal atomic layer (ALD) is investigated at 100 °C (II) hexafluoroacetylacetonate hydrogen. Palladium does not proceed such a low temperature unless catalytic sites are present to dissociate hydrogen during Pd film nucleation before sufficient has accumulated serve as the catalyst for dissociation. Ultrathin (<2 nm) nickel metal surfaces served initial prepared via (100...

Low-temperature, plasma-free atomic layer etching (ALE) of Pd0 is explored. A vacuum ultraviolet (VUV) light source (115 < λ 400 nm) used in conjunction with a controlled O2 gas exposure to produce PdOx at 100 °C. The amount that forms dependent on the duration coexposure 1 Torr and VUV irradiation. minimum time min required partially oxidize 2 nm Pd while 3 for 20 films, which verified situ using X-ray photoelectron spectroscopy (XPS). Formic acid vapor complete etch cycle, does not only...

Vacuum ultraviolet (VUV) enhanced atomic layer etching (ALE) of thin (∼8 nm) Ru films is demonstrated. Oxidation half-cycles 2–5 min VUV/O2 co-exposure are used to oxidize near-surface RuO2 at 1 Torr O2 and 100–150 °C. In situ x-ray photoelectron spectroscopy measurements indicate that formation saturates after ∼5 exposure 100 150 The depth oxidation limited by the rate can be controlled with substrate temperature time. Etching performed exposing oxidized film HCOOH vapor 0.50 for 30 s...

BaTiO3 (BTO) and LaxSr1 − xTiO3 (x ≤ 0.15) perovskite heterostructures are deposited epitaxially on SrTiO3 (STO)-buffered Si(001) via atomic layer deposition (ALD) to explore the formation of a quantum metal between ferroelectric film silicon. X-ray diffraction scanning transmission electron microscopy show crystallinity heterostructure by ALD. After postdeposition annealing La-doped STO in ultrahigh vacuum at 600 °C for 5 min, x-ray photoelectron spectra lack La-dopant activation when is 10...

Many fields of research have adopted self-assembly colloidal spheres as an easy and reliable method to produce macroscopic structures with nanoscale periodicity. The field soft lithography in particular has used fabricate lithographic masks templates. We developed a that uses the assembly directly submicrometer topographic chemical surface patterns. does not require any specialized equipment, making it particularly useful biological laboratories without expertise. technique involves curing...

Nickel and nickel oxide are utilized within various device heterostructures for chemical sensing, solar cells, batteries, etc. Recently, the rising interest in realizing low-cost, flexible electronics to enable ubiquitous sensors panels, next-generation displays, improved human-machine interfaces has driven development of low-temperature fabrication processes integration inorganic devices with polymeric substrates. Here, we report area-selective atomic layer deposition Ni by reduction...

Density functional theory (DFT) is used to better understand the oxidation of Pd metal using vacuum ultraviolet (VUV) light co-exposed with O2, which known produce O and O3. The arising from O, O3 assessed on bare Pd, a 0.25 monolayer adsorbed atomic increasing incorporation into substrate. DFT calculations are complemented experimentally by co-exposing 20 nm films 1 Torr O2 VUV photons (6.5 < hν 11.3 eV) D2 lamp at temperatures ranging 50 200 °C times 30 s 40 min. Oxidation characterized in...

Here, we propose SnO2 as a reactive ion etching (RIE) mask in fluorine-based processes. Tin forms nonvolatile compounds with fluorine at the process temperatures enabling tin to function an etch mask. We investigate atomic layer deposition (ALD) of on silicon thermal oxide, native H-terminated Si(001), and polystyrene surfaces using tetrakis(dimethylamino) tin(IV) H2O 170 °C understand film nucleation patterns. Pinhole free films approximately 1 nm thick form oxide resist SF6 under...

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