A5012594929- Ferroelectric and Piezoelectric Materials
- Microwave Dielectric Ceramics Synthesis
- Acoustic Wave Resonator Technologies
- Silicon and Solar Cell Technologies
- Multiferroics and related materials
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Nanostructures and Photoluminescence
- Dielectric properties of ceramics
- Material Dynamics and Properties
- Advancements in Semiconductor Devices and Circuit Design
- Photorefractive and Nonlinear Optics
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- solar cell performance optimization
- Electrostatics and Colloid Interactions
- Luminescence Properties of Advanced Materials
- Solid-state spectroscopy and crystallography
- Electronic and Structural Properties of Oxides
- Radiation Effects in Electronics
- Spectroscopy and Quantum Chemical Studies
- Dielectric materials and actuators
- Plasma Diagnostics and Applications
- Theoretical and Computational Physics
- High-pressure geophysics and materials
Fujian Medical University
2025
Xi'an Technological University
2015-2024
Shaanxi Normal University
2014-2015
Northwestern Polytechnical University
2007-2010
ZheJiang Academy of Agricultural Sciences
1996
National Aeronautics and Space Administration
1964-1992
Johnson Space Center
1992
Boston College
1981-1991
Space Science Institute
1991
United States Department of Energy
1983
Some ferroelectric and crystallographical properties of the compound ${\mathrm{Ba}}_{2}$${\mathrm{Bi}}_{4}$${\mathrm{Ti}}_{5}$${\mathrm{O}}_{18}$ are presented. The represents a new structure with unit cell consisting one ${\mathrm{Bi}}_{2}$${\mathrm{O}}_{2}^{2+}$ layer five perovskite layers. From -196\ifmmode^\circ\else\textdegree\fi{} to +580\ifmmode^\circ\else\textdegree\fi{}C, maximum in real part dielectric constant was observed at 329\ifmmode^\circ\else\textdegree\fi{}C. No thermal...
The completeness of the Cole—Cole diagram in analysis dielectric relaxation is proved by showing explicitly that a semicircle corresponds uniquely to Debye function. A method established distinguish continuous distribution times from single time.
The dielectric constants of ${\mathrm{Cr}}_{2}$${\mathrm{O}}_{3}$ were measured at 25.5\ifmmode^\circ\else\textdegree\fi{}C by a two-terminal substitution method on specimens cut from single crystal. average thus obtained are: 1 kc/sec parallel $a$ axis 13.3, $c$ 11.9; 2 Mc/sec 13.0, 11.8. constant for either orientation increased approximately ${10}^{\ensuremath{-}3}$ per 1\ifmmode^\circ\else\textdegree\fi{}C in the temperature interval 298 to 325\ifmmode^\circ\else\textdegree\fi{}K. A...
Abstract Metal-insulator-semiconductor (MOS) capacitor is a key structure for high performance MOS field transistors (MOSFETs), requiring low leakage current, breakdown voltage, and interface states. In this paper, β -Ga 2 O 3 capacitors were fabricated with ALD deposited Al using H or Ozone (O ) as precursors. Compared the gate dielectric precursor, current precursor case decreased by two orders of magnitude, while it keeps same level at fixed charges, state density, border traps. The SIMS...
Some ferroelectric and crystallographical properties of the compound ${\mathrm{Bi}}_{4}$${\mathrm{Ti}}_{3}$${\mathrm{O}}_{12}$ are presented. The has a dielectric maximum at 685\ifmmode^\circ\else\textdegree\fi{}C on increasing temperature 670\ifmmode^\circ\else\textdegree\fi{}C decreasing temperature. At these temperatures, an endothermic peak exothermic peak, respectively, occur. Ferroelectricity was observed along $c$ axis single crystal this compound.
Abstract The dielectric relaxation and ac conduction of CaCu3Ti4O12 (CCTO) ceramics were investigated at different temperatures under a dc bias. bias gives rise to space charge accumulation, i.e. an electrode response, resulting in the significant increase permittivity loss tangent. Two Debye-like relaxations, arising from grain boundary responses, are present low frequency with relaxations distinguished according impedance spectroscopy frequency-dependent conductivity. times 0.955 ms 0.026...
Tempering and isothermal curves of annealing radiation damage in p- n-channels both commercial, or "soft," radiation-hardened, J-process, samples RCA CD4007A CMOS integrated circuits, irradiated with Co-60 gamma-rays 1 MeV electrons, have been determined. These experimental data were analyzed for activation energies thermal using two theoretical treatments, one which is a new approach proposed here. The resulting energy distribution p-channels the commercial J-process exhibit single peak...
Ferroelectric ceramics SrBi2−xLaxNb2O9 (SBLNO) were prepared by a solid state reaction process. X-ray diffraction analysis indicated that single phase layered perovskites obtained. The maximum dielectric permittivity peak broadened gradually with the lanthanum content increasing transition from normal ferroelectrics to relaxorlike occurs in SBLNO. modified Curie–Weiss (CW) law was used describe relaxor behavior of SBLNO ceramics. relaxation indication coefficient (γ) estimated quadratic fit...
The dc breakdown field has been measured for ceramic BaTi${\mathrm{O}}_{3}$ as a function of the ambient temperatures. shows, in general, temperature dependence thermal type where decreases is increased. However, addition to this general behavior, dips down strongly and shows minima at critical temperatures phase transformations. This seems indicate process polarization breakdown, most pronounced near orthorhombic-tetragonal transition
Abstract In this work, the random electric fields are constructed in hard PZT ceramics by adding ZnO particles as a secondary phase to tune piezoelectric properties and losses. It is found that internal bias field existing has been tuned successfully its value reduces with increased content. As consequence, constant d 33 reaches up 483 pC/N PZT/0.75 wt%ZnO composite, which much higher than of matrix. meantime, electromechanical quality factor Q m , dielectric loss tan δ Curie temperature T C...