A5059057398- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Chalcogenide Semiconductor Thin Films
- CCD and CMOS Imaging Sensors
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Advanced Photocatalysis Techniques
- Advanced Thermoelectric Materials and Devices
- Photonic and Optical Devices
- Gas Sensing Nanomaterials and Sensors
- Photonic Crystals and Applications
- Optical Polarization and Ellipsometry
- Advanced MEMS and NEMS Technologies
- Nanowire Synthesis and Applications
- Terahertz technology and applications
- Ferroelectric and Piezoelectric Materials
- Photoreceptor and optogenetics research
- Solid-state spectroscopy and crystallography
- Analytical Chemistry and Sensors
- Electrical and Thermal Properties of Materials
- Acoustic Wave Resonator Technologies
- Plasmonic and Surface Plasmon Research
Indian Institute of Technology Delhi
2020-2025
Jamia Millia Islamia
2017
Abstract Despite advancements in terahertz (THz) modulators, achieving a balance between large modulation depth (MD) and fast speed scalable devices remains significant challenge. Optically pumped THz modulators with high MD, broad bandwidth, response times are essential for progress technology. Here, MoTe 2 /Si van der Waals (vdW) heterostructures grown via molecular beam epitaxy (MBE) as an optically leveraging its favorable band alignment seamless integration silicon complementary...
Achieving low contact resistance in advanced electronic devices remains a significant challenge. As the demand for faster and more energy-efficient grows, 2D engineering emerges as promising solution next-generation electronics. Beyond graphene, 1T-WTe2 has gained attention due to its outstanding electrical transport properties, quantum phenomena, Weyl semimetallic characteristics. We demonstrate direct wafer-scale growth of via molecular beam epitaxy (MBE) use it layered materials like...
This study presents a layered transition metal dichalcogenide/black germanium (b-Ge) heterojunction photodetector that exhibits superior performance across broad spectrum of wavelengths spanning from visible (vis) to shortwave infrared (SWIR). The includes thin layer b-Ge, which is created by wet etching (Ge) wafer form submicrometer pyramidal structures. On top this b-Ge layer, the WS2 film deposited using pulsed laser deposition. In comparison conventional germanium, absorbs about 25% more...
The demand for inexpensive, efficient photoelectrosensitive materials photosensing applications still exists to replace the expensive and highly intricate systems. Herein, we have designed an SnS2-/rGO-decorated 2D-TaS2 heterostructure broadband photodetector also studied its photoelectrochemical properties. According measurements, 2D-TaS2/SnS2–rGO shows 10 times enhancement in photocurrent density, i.e., 2.23 mA/cm2 at −0.98 V under light illumination, than that of bare which 0.25 V....
In this study, we proposed a light sensitive artificial Spike-Afferent Visual Optoelectronic Nerve (SAVON) circuit for retinomorphic applications. The SAVON is designed with serially connected $WS _{2} /$Ge heterostructure as photoresponsive cell (i.e. emulating the photoreceptors functionality) and ${MoS}_{2}$ based Threshold Switching (TS) device memristive neuron. We experimentally measured photoresponse from 660 nm to 1540 wavelength range) characteristics of our Pulsed Laser Deposited...
Here, we report the full-fledged journey towards material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark illumination conditions. Growth temperature 500oC gas pressure 55 sccm are found to be optimized parameters for formation thermodynamically stable WSe$_{2-x}$ with dominant Raman peak at 265 cm-1. XRD HR-TEM measurement clarify high crystallinity along c-axis quasi-crystallinity a b axes...
An optimized platinum (Pt) doped tin oxide (SnO2) ink was prepared by chemical route and deposited on low temperature co-fired ceramics (LTCC) micro-hotplate screen printing. alkoxide mixing tin(II) 2-ethylexanoate (17 wt%) with isopropanol (27 SnO2 powder (55 wt%). Doping of the done using Pt (1 which increased resistance film at room also reduced operating temperature. The ensor obtained stabilised MOSFET based stability circuit. Film characterization performed Atomic Force Microscopy...
A solution‐processed piezoceramic thin‐film MπM parallel‐plate capacitor structure to determine electromechanical coefficient using capacitance–voltage measurements is demonstrated. Electrical loading applied the stimulate out‐of‐plane longitudinal and transverse elongation. The piezoelectric ( d 33 ) estimated spatial deviation of dimensions as a function electric field. results are validated finite element method‐based modeling compared with several in literature, including piezoresponse...
Remote sensing for object identification depends on the intensity of infrared light, ranging from near-infrared (<tex>$0.8\mu \mathrm{m}$</tex>) to mid-wave (<tex>$3\mu \mathrm{m}$</tex>), reflected or emitted by object, providing information one parameter. However, surface orientation any has two degrees freedom, which can be found using polarized light. Hybrid sensors, consisting external polarizers, have expensive manufacturing process. In this work, a bowtie nanoantenna with gap size...