A5012823443- Radiation Effects in Electronics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
- Ionosphere and magnetosphere dynamics
- Particle Detector Development and Performance
- Solar and Space Plasma Dynamics
- Graphite, nuclear technology, radiation studies
- Semiconductor Quantum Structures and Devices
- Atmospheric Ozone and Climate
- CCD and CMOS Imaging Sensors
- Advanced Semiconductor Detectors and Materials
- VLSI and Analog Circuit Testing
- Silicon Nanostructures and Photoluminescence
- Nuclear reactor physics and engineering
- Computational Geometry and Mesh Generation
- Engineering and Test Systems
- Electromagnetic Compatibility and Noise Suppression
- Photocathodes and Microchannel Plates
- Thin-Film Transistor Technologies
- Analog and Mixed-Signal Circuit Design
- Phase Equilibria and Thermodynamics
Université de Montpellier
2016-2025
Institut d'Électronique et des Systèmes
2014-2025
Centre National de la Recherche Scientifique
2015-2025
Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier
2002
We describe a model for enhanced interface-trap formation at low dose rates due to space-charge effects in the base oxides of bipolar devices. The use analytical models allows one reduce significantly number free parameters theory and elucidate main physical mechanisms that are responsible oxide-trap processes. found hole trapping oxide cannot be all low-dose-rate sensitivity (ELDRS) SiO/sub 2/, contribution protons is also essential. dynamics defined by relation between proton mobility...
The trapped charge density in the LOCOS bird's beak resulting from irradiating a conventional NMOSFET has been analysed using 2D finite element simulation. This paper shows maximum of region. voltage shift lateral parasitic transistor region induces high leakage current, and prevents any normal circuit operation. silicon doping level, supply shape are key parameters for device hardening rad-tolerant technologies.
The combined effects of electrical stress and neutron irradiation the last generation commercial discrete silicon carbide power MOSFETs are studied. single-event burnout (SEB) sensitivity during is analyzed for unstressed electrically stressed devices. For surviving devices, a comprehensive study breakdown voltage degradation performed by coupling effects. In addition, mutual influences between radiative constraints investigated through TCAD modeling.
Due to the expansion of defects like single Shockley-type Stacking Faults inside SiC epitaxial drift layer, during high current stress, classical MOSFETs can be victims degradation their electrical characteristics. The introduction an buffer layer between substrate and n- epilayer, called recombination-enhancing was shown avoid this degradation. In paper, TCAD simulations behavior such a commercial MOSFET device with varying thickness are studied, indicating only small modifications These...
A physical model is developed to quantify the contribution of oxide-trapped charge enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space limited transport partially responsible for enhancement. At low dose rates, more holes are trapped near silicon-oxide interface than at high resulting larger midgap voltage shifts. The additional causes an exponential increase excess base current and a resultant decrease some NPN technologies....
The thermal runaway in SiC Schottky barrier diodes (SBDs) caused by heavy ions was identified a device simulator with parameters carefully extrapolated to an extended temperature range far exceeding the melting point of SiC. It is shown that critical electric field needed activate impact ionization attributable material and contact on it are responsible for SBDs.
The mechanisms responsible for neutron-induced single-event burnout (SEB) in commercial silicon carbide power MOSFETs under atmospheric-like neutron spectrum were investigated and analyzed. combined effect of applied reverse gate voltage drain was evaluated. First, local analysis the packaged device at wafer level is performed to reveal failure mechanism inside semiconductor lattice. Second, based on stress testing surviving devices looking influence bias during irradiation, an enhanced...
Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that main sensitive parameter is ON-resistance. In this paper, degradation mechanisms at play investigated through TCAD simulation, an explanation...
TCAD software for device modeling, called ECORCE, is presented. ECORCE based on a classical drift-diffusion model and distributed under the GPL. It facilitates modeling by providing an easy-to-use graphical user interface defining geometry physical of devices, executing calculations, analyzing results. Furthermore, integrating dynamic mesh generator, frees from meshing step either DC or transient analysis. allows Single Event Effect features restricted diffusion add-on that accounts kinetics...
Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches optimize circuit design before irradiation tests, and support understanding post-irradiation data. This work proposes novel simplified methodology evaluate single-event effects (SEEs) cross-section. To validate proposed approach, we consider 6T SRAM cell case study four technological nodes....
CARactérisation et Modélisation de l'Environne- ment 2 and 3 (CARMEN 3) Centre National d' Études Spatiales (CNES) missions aim to measure particle fluxes in the radiation belts via Influence sur les Composants Avancés des Radiations l'Espace-Nouvelle Génération (ICARE-NG) monitor embedded on low Earth orbit (LEO) satellites. In this article, we find a projection model of these data onto elliptical satellite belt storm probes (RBSP) flux particle-level measurements. The is done with machine...
Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown negatively biasing the gate leads a substantial increase of SEB cross section in particular when collector voltage closer safe operating area device.
Charge trapping on several energy levels and thermally activated detrapping phenomena in SiO/sub 2/ have been determined by finite element simulation. The results obtained agree well with experimental charge measurements, enable the simulation of post-irradiation effects Si/SiO/sub structures.
Total dose effect remains one challenging issue for electronics systems intended to space applications. For high total missions, like Jupiter or scientific instruments which functionality and precision must be guaranteed, is of the main drawbacks. So, new solutions found in order ensure reliability mission. In this paper, an analysis a thermal annealing approach done. This consists applying isothermal cycles device such that its electrical characteristics can regenerated after being degraded...
The Switched Dose Rate technique is investigated when devices do not exhibit ELDRS. Experimental data and modeling results are presented discussed in terms of hardness assurance. It shown, for that show ELDRS, a time required before the switched reach LDR curve. As solution, it proposed to apply an annealing between HDR irradiation.