Gabriela Borin Barin

ORCID: 0000-0002-1069-6182
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About
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Research Areas
  • Graphene research and applications
  • Molecular Junctions and Nanostructures
  • Quantum and electron transport phenomena
  • 2D Materials and Applications
  • Carbon Nanotubes in Composites
  • Graphene and Nanomaterials Applications
  • Surface Chemistry and Catalysis
  • Semiconductor materials and devices
  • Topological Materials and Phenomena
  • Synthesis and Properties of Aromatic Compounds
  • Advancements in Battery Materials
  • Supercapacitor Materials and Fabrication
  • Catalysis for Biomass Conversion
  • Nanocluster Synthesis and Applications
  • Quantum-Dot Cellular Automata
  • Clay minerals and soil interactions
  • Advanced Memory and Neural Computing
  • Fiber-reinforced polymer composites
  • Advancements in Transdermal Drug Delivery
  • Fullerene Chemistry and Applications
  • Carbon and Quantum Dots Applications
  • Thermochemical Biomass Conversion Processes
  • Thermal properties of materials
  • Medicinal plant effects and applications
  • Boron and Carbon Nanomaterials Research

Swiss Federal Laboratories for Materials Science and Technology
2017-2025

University of Bern
2017

Rensselaer Polytechnic Institute
2017

Politecnico di Milano
2017

Universidade Federal de Sergipe
2009-2017

Massachusetts Institute of Technology
2014-2016

Claudia Backes Amr M. Abdelkader Concepción Alonso Amandine Andrieux-Ledier Raúl Arenal and 95 more Jon Azpeitia Nilanthy Balakrishnan Luca Banszerus Julien Barjon Ruben Bartali Sebastiano Bellani Claire Berger Reinhard Berger M. Mar Bernal Carlo Bernard Peter H. Beton André Beyer Alberto Bianco Peter Bøggild Francesco Bonaccorso Gabriela Borin Barin Cristina Botas Rebeca Bueno Daniel Carriazo Andrés Castellanos-Gómez Meganne Christian Artur Ciesielski Tymoteusz Ciuk Matthew T. Cole Jonathan N. Coleman Camilla Coletti Luigi Crema Huanyao Cun Daniela Dasler Domenico De Fazio Noel Díez Simon Drieschner Georg S. Duesberg Román Fasel Xinliang Feng Alberto Fina Stiven Forti Costas Galiotis Giovanni Garberoglio J. M. Garcı́a José A. Garrido Marco Gibertini Armin Gölzhäuser J. Gómez Thomas Greber Frank Hauke Adrian Hemmi Irene Hernández-Rodríguez Andreas Hirsch S.A. Hodge Yves Huttel Peter Uhd Jepsen I. Jiménez Ute Kaiser Tommi Kaplas HoKwon Kim András Kis Konstantinos Papagelis Kostas Kostarelos Aleksandra Krajewska Kangho Lee Changfeng Li Harri Lipsanen Andrea Liscio Martin R. Lohe Annick Loiseau Lucia Lombardi María Francisca López Oliver Martin Cristina Martín L. Martı́nez José Á. Martín‐Gago José I. Martínez Nicola Marzari Álvaro Mayoral John B. McManus Manuela Melucci Javier Méndez C. Merino Pablo Merino Andreas Meyer Elisa Miniussi Vaidotas Mišeikis Neeraj Mishra Vittorio Morandi Carmen Munuera Roberto Muñoz Hugo Nolan Luca Ortolani Anna K. Ott Irene Palacio Vincenzo Palermo John Parthenios Iwona Pasternak A. Patanè

We present an overview of the main techniques for production and processing graphene related materials (GRMs), as well key characterization procedures. adopt a 'hands-on' approach, providing practical details procedures derived from literature authors' experience, in order to enable reader reproduce results.

10.1088/2053-1583/ab1e0a article EN cc-by 2D Materials 2020-01-29

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) ultra-low power devices such as tunnelling FETs. However, the short length wide band gap of these prevented fabrication with desired switching behaviour. Here, by fabricating channel (Lch ~20 nm) a thin, high-k gate dielectric 9-atom (0.95 armchair material, we demonstrate FETs on-current (Ion >1 uA at Vd = -1 V) Ion/Ioff ~10^5 room temperature. We...

10.1038/s41467-017-00734-x article EN cc-by Nature Communications 2017-09-15

Bottom-up synthesis of graphene nanoribbons (GNRs) has significantly advanced during the past decade, providing various GNR structures with tunable properties. The chiral GNRs, however, been underexplored and only limited to (3,1)-GNRs. We report herein surface-assisted first heteroatom-doped (4,1)-GNRs from rationally designed precursor 6,16-dibromo-9,10,19,20-tetraoxa-9a,19a-diboratetrabenzo[a,f,j,o]perylene. structure GNRs verified by scanning tunneling microscopy, noncontact atomic force...

10.1021/jacs.8b06210 article EN Journal of the American Chemical Society 2018-07-10

Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps which makes them excellent candidates for room temperature switching devices such as field-effect transistors (FET). However, spite their exceptional properties, significant challenges remain GNR processing and characterization. This contribution addresses some most important challenges, including fabrication scalability, substrate...

10.1021/acsanm.9b00151 article EN publisher-specific-oa ACS Applied Nano Materials 2019-03-20

Abstract Graphene nanoribbons synthesized using bottom-up approaches can be structured with atomic precision, allowing their physical properties to precisely controlled. For applications in quantum technology, the manipulation of single charges, spins or photons is required. However, achieving this at level graphene experimentally challenging due difficulty contacting individual nanoribbons, particularly on-surface ones. Here we report and electrical characterization a multigate device...

10.1038/s41928-023-00991-3 article EN cc-by Nature Electronics 2023-08-14

We report on the surface-assisted synthesis and spectroscopic characterization of hitherto longest periacene analogue with oxygen–boron–oxygen (OBO) segments along zigzag edges, that is, a heteroatom-doped perihexacene 1. Surface-catalyzed cyclodehydrogenation successfully transformed double helicene precursor 2, i.e., 12a,26a-dibora-12,13,26,27-tetraoxa-benzo[1,2,3-hi:4,5,6-h′i′]dihexacene, into planar 1, which was visualized by scanning tunneling microscopy noncontact atomic force...

10.1021/jacs.7b02258 article EN Journal of the American Chemical Society 2017-03-25

Abstract Photodetectors utilizing graphene field‐effect transistors sensitized by colloidal quantum dots exhibit high responsivities under infrared light illumination. Precise, microscopic spatial control over dot deposition is required to gain deeper insight into device mechanisms, optimize performance, and enable new architectures applications. The latter may eventually include photodetectors with subwavelength dimensions. Here, are fabricated electrohydrodynamic nanoprinting of PbS onto...

10.1002/adom.201900019 article EN Advanced Optical Materials 2019-03-25

Abstract Graphene nanoribbons (GNRs) have attracted much interest due to their largely modifiable electronic properties. Manifestation of these properties requires atomically precise GNRs which can be achieved through a bottom–up synthesis approach. This has recently been applied the width‐modulated hosting topological quantum phases, with valence that are well captured by Su–Schrieffer–Heeger (SSH) model describing 1D chain interacting dimers. Here, ultralow bandgap charge carriers behaving...

10.1002/adma.201906054 article EN publisher-specific-oa Advanced Materials 2020-02-11

Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by small size (<50 nm), and the preservation physical properties upon device integration. In this combined experimental theoretical study, we report on quantum dot behavior atomically precise GNRs integrated a geometry....

10.1021/acsnano.0c00604 article EN cc-by-nc-nd ACS Nano 2020-03-30

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization the growth conditions to match structural requirements successful device integration, GNR length being most critical parameter. In this work, we study growth,...

10.1002/smll.202202301 article EN cc-by Small 2022-06-17

Abstract Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for devices has focused on integration into field‐effect‐transistor (FET) geometries. However, such FET have limited electrostatic tunability presence a single gate. Here, device 9‐atom wide armchair...

10.1002/aelm.202201204 article EN cc-by Advanced Electronic Materials 2023-02-02

Graphene nanoribbons (GNRs) have attracted considerable interest, as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited practical device application characterization. In contrast, Raman spectroscopy is a sensitive method characterization GNRs, in particular...

10.1021/acsnano.9b05817 article EN publisher-specific-oa ACS Nano 2019-10-01

Atomically precise graphene nanoribbons (GNRs) are a promising emerging class of designer quantum materials with electronic properties that tunable by chemical design. However, many challenges remain in the device integration these materials, especially regarding contacting strategies. We report on uniaxially aligned and non-aligned 9-atom wide armchair (9-AGNRs) field-effect transistor geometry using electron beam lithography-defined electrodes. This approach yields controlled electrode...

10.1016/j.carbon.2021.08.001 article EN cc-by-nc-nd Carbon 2021-08-12

We unveil the nature of structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on magnetism and electronic transport basis scanning probe microscopies first-principles calculations. find that edge-missing m-xylene units emerging during cyclodehydrogenation step on-surface synthesis are most common point defects. These "bite" defects act as spin-1 paramagnetic centers, severely disrupt conductance spectrum around band extrema, give rise to spin-polarized charge...

10.1021/acs.jpclett.1c00921 article EN The Journal of Physical Chemistry Letters 2021-05-12

The on‐surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain GNR processing characterization. Herein, Raman spectroscopy is used to characterize different types GNRs on growth substrate track quality upon transfer. A Raman‐optimized (RO) device an optimized mapping approach are presented that allow acquisition...

10.1002/pssb.201900343 article EN cc-by physica status solidi (b) 2019-10-16

We report the optical imaging and absorption spectroscopy on atomically precise armchair graphene nanoribbons (GNRs) insulating fused silica substrates. This is achieved by controlling light polarization macroscopically aligned GNRs which greatly enhances contrast of submonolayer measure linear spectra 7-armchair 9-armchair in this study, experimental data agree qualitatively with ab inito calculation results. The technique enables an unambiguous identification provides a rapid tool to...

10.1021/acs.nanolett.9b04497 article EN Nano Letters 2020-01-09

This study investigates the growth mechanism of graphene nanoribbons (GNRs) on vicinal surfaces and influence precursor coverage quality alignment GNRs substrate upon transfer.

10.1039/d5na00017c article EN cc-by Nanoscale Advances 2025-01-01

Nitrogen core-doping of graphene nanoribbons (GNRs) allows trigonal planar carbon atoms along the backbone GNRs to be substituted by higher-valency nitrogen atoms. The excess valence electrons are injected into π-orbital system GNR, thereby changing not only its electronic occupation but also topological properties. We have observed this change synthesizing dilute core-doped armchair with a width five (N2-5-AGNRs). incorporation pairs results in emergence boundary states at interface between...

10.1021/acsnano.4c17602 article EN cc-by-nc-nd ACS Nano 2025-03-27
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