A5011397453- Advanced Antenna and Metasurface Technologies
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Advanced Semiconductor Detectors and Materials
- Chalcogenide Semiconductor Thin Films
- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Metamaterials and Metasurfaces Applications
- Silicon Nanostructures and Photoluminescence
- Non-Destructive Testing Techniques
- Laser Material Processing Techniques
- Particle Accelerators and Free-Electron Lasers
- Advancements in Photolithography Techniques
- Nonlinear Optical Materials Studies
- Semiconductor Quantum Structures and Devices
- Advanced X-ray Imaging Techniques
- Advanced Measurement and Metrology Techniques
- Electromagnetic wave absorption materials
- Advanced Fiber Laser Technologies
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
University of California, Los Angeles
2012-2020
Veeco (United States)
2007
Singapore Institute of Manufacturing Technology
2006
University of Southern California
2002
Integration of semiconductor epitaxical nanostructures and nanocrystals into two classes quantum structures, uncovered adsorbed or buried via overgrowth, is successfully demonstrated through structural optical studies. The combination InGaAs/GaAs structures InAs employed as a vehicle with the functional aim exploiting well developed optoelectronic communication technology based on former biochemical biomedical applications for which latter are suited.
Millimeter-wave components, such as circulators and isolators, frequently use magnetic fields to break the symmetry of signal propagation provide unidirectional transmission. Although effective, these components have not seen level miniaturization other millimeter-wave primarily due discrete nature magnets used in components. Using 40–50 GHz range a motivating application, requirements arise for deposited films, namely, immunity eddy currents, sufficient magnetization act self-biasing...
We report on the tailoring of detection bands InAs quantum-dot infrared photodetectors (QDIPs) using InxGa1−xAs capping layers and realization voltage-tunable two-color QDIPs for mid-wavelength (MWIR) long-wavelength (LWIR) detection. having 2.0 ML QDs capped by 20 In0.15Ga0.85As layer show bias-dependent photocurrent peak positions in LWIR regime (∼8–9 μm) which are redshifted with respect to those (∼5–7 counterpart without layers. 2.5 a 30 have bimodal QD size distribution MWIR (∼5.5–6...
We report two methods of fabricating waveguides in photosensitive Ag+ doped Foturan glass by femtosecond laser writing and subsequent annealing. The first method involves at energies higher than the optical breakdown threshold, directly resulting microstructural changes a refractive index increase. In contrast, energy used second was much lower threshold for breakdown. Subsequent thermal annealing 500 °C after this process causes Ag nanoparticles to precipitate written trace corresponding...
Wireless multiferroics is an emerging field taking advantage of energy efficient multiferroic coupling to design and develop ultra-conformal, electrically-small antennas. To date, all work on MEMS scale devices utilize linear coupling. In this work, we present the first demonstration frequency doubling through nonlinear in resonators. Multiferroic composite cantilevers are fabricated tested, it shown that these resonators can be wirelessly driven mechanical resonance with magnetic fields at...
We report on the design and development of an all-dielectric laser-driven accelerator to be used in GALAXIE (GV-per-meter Acce Lerator And X-ray-source Integrated Experiment) project's compact free-electron laser. The approach our working is construct eigenmodes, borrowing from field photonics, which yield appropriate, highly demanding dynamics a high-field, short wavelength accelerator. Topics discussed include transverse focusing, power coupling, bunching, fabrication.
The depth‐dependent changes of macroporous etching in aqueous hydrofluoric (HF) solutions are addressed. Macroporous n‐type silicon HF acid produces high aspect ratio structures. However, an irregular etch profile can emerge as the pore depth increases, particular branched regions emerging from vertical pores. root cause this non‐ideal is investigated, focusing on dark current component electrochemical etching. during progression was simulated, and it found that increased resulted increasing...
In this presentation we show the results from AFM measurements on photo masks to determine sidewall angles and height values. The images were obtained in adaptive scanning modes where data points are determined by feedback system of achieve highest reliability. deep trench (DT) mode depth information is received fast without information. critical dimension (CD) about three dimensional an additional dither a specially shaped tip. high accuracy help development new masks. DT values at 3 sites...