A5065027469- Gas Sensing Nanomaterials and Sensors
- Analytical Chemistry and Sensors
- Advanced Chemical Sensor Technologies
- Semiconductor Quantum Structures and Devices
- Catalytic Processes in Materials Science
- Nuclear Physics and Applications
- Photonic and Optical Devices
- Nuclear reactor physics and engineering
- Sensor Technology and Measurement Systems
- Catalysis and Oxidation Reactions
- Superconducting and THz Device Technology
- Analytical Chemistry and Chromatography
- Advancements in Solid Oxide Fuel Cells
- Radiation Detection and Scintillator Technologies
- Nanowire Synthesis and Applications
- Radioactive contamination and transfer
- Advanced Semiconductor Detectors and Materials
- Thermal Expansion and Ionic Conductivity
- Magnetic confinement fusion research
- Genetically Modified Organisms Research
- Fusion materials and technologies
- Nuclear and radioactivity studies
- Multiferroics and related materials
- Nuclear materials and radiation effects
- Microwave Dielectric Ceramics Synthesis
Oak Ridge National Laboratory
2006-2020
Defense Systems (United States)
2005
Boeing (United States)
1989-2003
Behavioral Tech Research, Inc.
1989-2003
University of Illinois Urbana-Champaign
2003
American Ceramic Society
2003
Seattle University
1998
University of Washington
1998
Center for Devices and Radiological Health
1988
Savannah River National Laboratory
1967
This report details development of a route to solution‐derived (1− x )Bi 1/2 Na TiO 3 · BaTiO powders. The method developed was the citrate‐gel method—an evaporative, aqueous technique. When applied 0.95Bi ·0.05BaTiO (BNBT‐5), produced perovskite phase powders that readily densified in temperature range 1000°C. grain size sintered materials on order 1 μm, and weak‐field dielectric properties at MHz were similar those reported for conventionally prepared higher temperatures (e.g., 1200°C).
We have fabricated a metal-semiconductor-metal Schottky photodetector on semi-insulating InP substrate using nominally lattice-matched In0.52Al0.48As/In0.53(GaxAl1−x)0.47As (graded)/In0.53Ga0.47As structure grown by molecular beam epitaxy. On average the graded quaternary layer enhanced responsivity about 35% compared to an identical device without region, reaching maximum of 0.45 A/W at 10 V applied bias. The associated dark current was 95 nA; capacitance 90 fF. High-speed measurements with...
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTGas Chromatographic Separation of the Hydrogen IsotopesD. L. West and A. MarstonCite this: J. Am. Chem. Soc. 1964, 86, 21, 4731–4732Publication Date (Print):November 1, 1964Publication History Published online1 May 2002Published inissue 1 November 1964https://pubs.acs.org/doi/10.1021/ja01075a047https://doi.org/10.1021/ja01075a047research-articleACS PublicationsRequest reuse permissionsArticle Views63Altmetric-Citations22LEARN ABOUT THESE...
The Materials Plasma Exposure eXperiment (MPEX) is a linear plasma device that will address the plasma-material interaction (PMI) science for future fusion reactors and enable testing of plasma-facing components (PFCs). It designed as steady-state eventually delivering an ion fluence up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">31</sup> m xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> target. be handle neutron-activated...
sensing elements consisting of coplanar, compositionally identical oxide electrodes on a yttria-stabilized zirconia substrate are reported. During operation, dc current (or voltage) is applied to the element, and resultant voltage current) used as signal. With appropriate level, these can be nearly "total ," with responses NO same algebraic sign similar magnitude. For example, when an element was operated at fixed , produced changes respectively. The displayed sensitivity that decreasing...
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTDetermination of Total Carbon in Water by Combustion Gas Chromatography.D. L. WestCite this: Anal. Chem. 1964, 36, 11, 2194–2195Publication Date (Print):October 1, 1964Publication History Published online1 May 2002Published inissue 1 October 1964https://pubs.acs.org/doi/10.1021/ac60217a049https://doi.org/10.1021/ac60217a049research-articleACS PublicationsRequest reuse permissionsArticle Views35Altmetric-Citations7LEARN ABOUT THESE METRICSArticle...
Fabrication and characterization of electrically biased sensing elements operative at are described. The were produced by screen-printing Pt transition metal oxide electrodes on yttria-stabilized zirconia substrates. DC electrical biasing greatly enhanced the response to nitric (NO), with voltage changes order 10% observed as NO . Voltage current techniques employed a element using oxide, computed in resistance due nearly identical, suggesting that mechanism is change dc resistance. was...
A report is presented on a fully integrated metal-semiconductor-metal (MSM) transimpedance amplifier photoreceiver based lattice matched In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As heterostructures grown by molecular beam epitaxy (MBE). The layers were deposited in single growth run with the heterojunction-FET (HFET) overlaying detector structures and fabricated using simple, near planar process that does not require pregrowth substrate patterning or complex planarization schemes....
The authors describe two simple microwave switches controlled by a weak optical beam. They are suitable for connecting elements where electrical bias is not possible. Results from devices presented: surface-depleted, gateless, FET; and FET an integrated photovoltaic diode. Insertion losses of 3 dB isolations 20 were obtained up to 5.6 GHz with power 1 mW.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
High speed results on In0.53, Ga0.47As/ln0.52Al0.aAs (on InP) planar doped heterojunction-FETs and 1.3–1.6μ wavelength-compatible metal-semiconductor-metal photodetector devices fabricated from a vertically stacked device design with the FET overlaying detector structure are reported. A cut-off frequency for unity current gain of 30GHz was achieved 1μ gatelength. The at 7 V bias had photoresponse dark 0.48 A/W 24 nA, respectively. At 10 FWHM impulse response 65 ps. simple near-planar...
Organic iodides, presumably derived from interaction between fission-product iodine and process solvent, were detected identified by gas chromatography in the exhaust air Purex at Savannah River Plant. Three of ten peaks obtained tentatively as alkyl iodides behavior compounds relative response an electron absorption detector vs a flame ionization detector.
Sensing behavior of electrochemical transducers for the detection sulfur dioxide (SO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) is described. These elements operate at temperatures in range 800-900 °C, and are constructed from oxide precious metal electrodes on oxygenion conducting substrates. The responses to SO oxygen contents around 5% can be large, with 25 ppm causing a 30-40% change sensing signal. This response shown little...
The Spallation Neutron Source (SNS) facility in Oak Ridge, Tennessee uses a liquid mercury target that is bombarded with protons to produce pulsed neutron beam for materials research and development. In order mitigate expected cavitation damage erosion (CDE) of the containment vessel, two-phase flow arrangement has been proposed was earlier proven be effective significantly reducing CDE non-prototypical bodies. This involves covering “window”, through which high-energy proton passes,...
Results from tests of radiation detection instruments with radionuclide identification capabilities will depend on the sources used for tests. Radionuclide detectors are designed to measure photons and provide an source being measured. High-resolution spectra need be acquired determine all observable peaks in before testing these types instruments. These may due impurities and/or scatter sources. This paper discusses issues encountered response a radioisotope device one type testing. In...