A5085831471- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Advanced Surface Polishing Techniques
- Nuclear Physics and Applications
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Metal and Thin Film Mechanics
- Epoxy Resin Curing Processes
- Polymer crystallization and properties
- Polymer Nanocomposites and Properties
- Nuclear materials and radiation effects
- Fusion materials and technologies
- Surface and Thin Film Phenomena
- Synthesis and properties of polymers
- Photonic and Optical Devices
- Additive Manufacturing and 3D Printing Technologies
- Diamond and Carbon-based Materials Research
- Liquid Crystal Research Advancements
- Nuclear Materials and Properties
Universidade Federal do Rio Grande do Sul
1996-2025
Massachusetts Institute of Technology
2024
IBM (United States)
2005-2013
IBM Research - Thomas J. Watson Research Center
1988-2009
Universidade de São Paulo
2004
National Institute for Space Research
1997
Virginia Tech
1993-1996
Universidade Federal do Rio de Janeiro
1987
Universidade Federal do Rio Grande
1987
Max Planck Institute for Chemistry
1985
Long and short buried-channel In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> As MOSFETs with without alpha-Si passivation are demonstrated. Devices show much higher transconductance an effective peak mobility of 3810 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> / V middots. Short-channel a gate length 160 nm display current 825 muA/mum at Vg - Vt = 1.6 715...
Highly effective passivation of GaAs surface is achieved by a thin amorphous Si (a-Si) cap, deposited plasma enhanced chemical vapor deposition method. Capacitance voltage measurements show that carrier accumulation or inversion layer readily formed in response to an applied electrical field when passivated with a-Si. High performance mode n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated a-Si/high-k/metal gate stack. Drain current saturation region...
The sustainability of agroecosystems depends on the maintenance soil organic matter (SOM) and aggregate stability, which are key components health. long-term effects conservation management systems, such as adoption no till (NT) associated with cover crops, quality still unclear. aim this study was to evaluate NT systems combined cropping ecologically intensified by presence legumes carbon index (CMI) state aggregation, sensitive tools assess systems. autumn spring legume crops increased...
Iron nitride and carbonitride phases formed during nitrogen implantation subsequent thermal annealing of a medium-carbon steel are investigated by means conversion electron Mössbauer scattering. The results compared to previous work on similar systems also discussed in terms the mechanical properties ion implanted steels.
Empirical adsorption models have been extensively used to design and optimize ion exchange chromatography (IEC) processes for proteins. The equations go 40 years back the qualitative findings about electrical double layer (EDL) in exchangers form basis of stoichiometric displacement (SD) model widely preparative chromatography. While SD reduces experimental effort find salt-eluting conditions separation, knowledge transfer is restricted from one system another. However, this limitation can...
The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all cases, beginning irradiation, Rs increases with accumulation dose. After reaching ≊109 Ω/⧠, saturates, forming a plateau. This plateau is succeeded by decreasing increase dose, denoting that conduction via damage-related mechanisms taking place. threshold dose to convert conductive layer highly...
Abstract The use of inorganic (glass) fiber reinforcement to enhance the mechanical properties and reduce anisotropy in situ composites based on blends liquid crystalline polymers (LCPs) with polyetherimide (PEI) is discussed. It was found that tensile flexural moduli are increased reduced increasing grass content (when compared at equivalent LCP weight fractions). creep compliance PEI/LCP upon addition glass fibers. However, disadvantage processability worsens fibers composites. effect...
The stability of the electrical isolation in n-type GaAs layers irradiated with ions different mass is compared. irradiations were performed proper doses H+1, He+4, or B+11 to create specific damage concentration level which lead to: (i) trapping practically all carriers (Rs ≈108 Ω/□), (ii) onset hopping conduction and (iii) a significant ≈106 Ω/□). Irrespectively ion mass, temperature range for preserved, i.e., Rs &gt;108 Ω/□, extends up 200 ≈ 600 °C, respectively, cases (ii). In case...
Abstract Results related to the mechanical properties of in situ composites based on partially miscible blends polyetherimide (Ultem) and liquid crystalline polymers (HX1000 HX4000) are discussed. It is observed that, at least terms tensile flexural modulus, there a positive deviation from law mixtures. These results analyzed an attempt made explain origin this synergistic behavior upon morphological data. The these systems compared that immiscible system (Ultem/Vectra) also glass‐reinforced...
We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one to another by an amorphization/templated recrystallization (ATR) process, and then introduce ATR as alternative approach for fabricating planar hybrid substrates with surface regions (100)- (110)-oriented Si. The technique, applied a starting substrate comprising thin (50–200 nm) overlayer (100) or (110) Si on handle wafer, consists two process steps: (i) Si+ Ge+ ion...
Trench-edge defects formed during epitaxial recrystallization of trench-bounded amorphized silicon (a-Si) regions are examined as a function Si substrate crystal orientation. In (001), rectilinear a-Si features having edges aligned with the crystal’s in-plane ⟨110⟩ directions recrystallize leaving trench-edge along all trench edges, whereas identical in (011) without parallel to ⟨100⟩ direction and direction. The positions lateral extent these suggest that their source is defective epitaxy...
Profiles of Bi, Xe, Sn, Kr, Ga, Fe, K, Ar, P, Na, and F implanted into the AZ111 photoresist are compared with recent theoretical predictions. With exception noble gases F, experimental results well fitted by Biersack–Haggmark [Nucl. Instrum. Methods 174, 257 (1980)] Monte Carlo calculations. For we obtain ranges up to a factor 2 shorter than above Fluor changes profile as function energy, being nearly Gaussian at 30 keV distributing according calculated ionization 70 keV.
The authors emphasize controlled shallow doping of GaAs by ion implantation and its limitations to state-of-the-art IC technology. discuss the electrical activation behavior implanted silicon in upon subsequent capless or nitride capped rapid thermal annealing (RTA). It is demonstrated that atomic H diffuses into region from a plasma-enhanced chemical vapor deposition Si/sub 3/N/sub 4/ cap during as well annealing, retards kinetics Si. Thru-Si dopant implants have been studied enhance...
For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared SMT or tensile liner (TL) stressors. eSi:C showed higher channel mobility and drive current over our best poly-gate 45nm-node with In addition, better scalability than plus stressors from 380nm 190nm poly-pitches.
Sub-100 nm short-channel In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> As MOSFETs are demonstrated for both depletion- and enhancement-mode devices. High current of 960 muA/mum record transconductance 793 muS/mum have been achieved. Scaling behavior is investigated experimentally down to 80 the first time in III-V MOSFETs. Good scaling observed on-state current,...
We demonstrate self-aligned fully-depleted III-V MOSFETs using CMOS-compatible device structures and manufacturable process flows. Processes with good manufacturability scalability, such as, gate definition spacer formation RIE, of source/drain extensions (SDE) raised (RSD), have been established on III-Vs. short-channel devices down to length L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = 30 nm. Our best exhibit peak saturation...
We studied the annealing of silicon substrates implanted with a medium dose boron ions (3×1014 cm−2, 150 keV) employing conventional furnace (FA) and rapid thermal (RTA) processes performed in nitrogen atmosphere. The efficiency was monitored by visual inspection surface an optical microscope after steam oxidation Secco etching. FA is more efficient when at high temperature, but even so, it not capable suppressing completely implantation damage. On other hand, RTA observed to be than any...
The Hall effect and resistivity of Si:Bi with donor concentration varying from 3.0\ifmmode\times\else\texttimes\fi{}${10}^{17}$ to 1.4\ifmmode\times\else\texttimes\fi{}${10}^{20}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$ were measured room temperature down 13 K. samples prepared by ${\mathrm{Bi}}^{+}$ implantation in Van der Pauw structures delineated Si chips. resistivities compared the ones calculated a generalized Drude approach at similar temperatures doping concentration, presenting...