A5091202201- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum and electron transport phenomena
- Electronic and Structural Properties of Oxides
Hanyang University
2023-2025
Inha University
2021-2022
Wakeup-free and endurance-robust HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) ferroelectric field-effect transistor (FeFET) was fabricated on a silicon-on-insulator substrate. After high-pressure forming gas annealing as the last alloy step, performance endurance of FeFETs were significantly improved by trap states reduction, polarization enhancement, wake-up elimination. As result, show superior exceeding 10 <sup...
Gaseous pollutants, including nitrogen oxides, pose a severe threat to ecosystems and human health; therefore, developing reliable gas-sensing systems detect them is becoming increasingly important. Among the various options, metal-oxide-based gas sensors have attracted attention due their capability for real-time monitoring large response. In particular, in field of materials science, there has been extensive research into controlling morphological properties metal oxides. However, these...
Recently, ferroelectric tunnel junctions (FTJs) have gained extensive attention as possible candidates for emerging memory and synaptic devices neuromorphic computing. However, the working principles of FTJs remain controversial despite importance understanding them. In this study, we demonstrate a comprehensive accurate analysis metal-ferroelectric-dielectric-semiconductor stacked FTJ using low-frequency noise (LFN) spectroscopy. contrast to resistive random access memory, 1/f in...
Reinforcement learning (RL), exhibiting outstanding performance in various fields, requires large amounts of data for high performance. While exploration techniques address this requirement, conventional methods have limitations: complexity hardware implementation and significant burden. Herein, in‐memory RL systems leveraging intrinsic 1/ f noise synaptic ferroelectric field‐effect‐transistors (FeFETs) efficient are proposed. The electrical characteristics fabricated FeFETs with low‐power...
In this letter, we investigated the ferroelectric characteristics of Hf <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_\text{0.5}$</tex-math> </inline-formula> Zr O notation="LaTeX">$_\text{2}$</tex-math> (HZO) deposited by radio frequency (RF) sputtering at various deposition powers and impact additional long-term furnace annealing (FA) after formation annealing. Significant improvements in properties...
Abstract Ferroelectric (FE) materials are key to advancing electronic devices owing their non‐volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based used in logic circuits, memory‐storage devices, sensors, in‐memory computing. However, the primary challenge practical applications of memory is its reliability. To address this problem, a novel polarization pruning (PP) method proposed. The PP designed eliminate weakly polarized domains by applying an...
Ferroelectric field-effect transistor (FeFET) can be operated as a nonvolatile memory device with low programming voltage based on polarization. In particular, it used synaptic in neuromorphic system the NAND flash array structure. We demonstrate Hf0.5Zr0.5O2 (HZO)-based FeFET fabricated silicon-on-insulator (SOI) substrate high ON/OFF ratio and reliability characteristics. The HZO-based is utilized 3-D architecture. It verified binarization of input–output signals weight value for efficient...
Double-gate ferroelectric thin-film transistor (DG-FeTFT) with an amorphous indium–gallium–zinc oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula> -IGZO) channel is demonstrated. DG-FeTFT composed of all-sputter-deposited thin films and the bottom FeTFT (FeTFT notation="LaTeX">$_{\text {bottom}}{)}$ top conventional TFT (TFT {top}}{)}$ are combined into a single...
Abstract Forming gas annealing (FGA) is applied to HfO x ferroelectric tunnel junction (FTJ) synaptic devices passivate defects and reduce trap-assisted-tunneling (TAT). Without FGA, TAT caused by in metal–ferroelectric–insulator–semiconductor (MFIS) FTJ stack dominates the conduction mechanism FTJs results no memory window (MW). The reduction of or after FGA reveals effect polarization switching on performance. Consequently, linear/symmetric potentiation depression (P/D) characteristics...
A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide layer and silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET SiO2 IL, the proposed confirmed have faster program/erase operations, wider memory window, improved endurance/retention characteristics due higher dielectric constant of HfSiOx superior interfacial state between HfxZr(1-x)O2 IL. The demonstrates power spectral density that approximately two times smaller than conventional FeFETs...
In this study, we investigated the geometric scaling effects on memory characteristics of ferroelectric field-effect transistors (FeFETs) with nanosheet structures. It was observed that window (MW) reduced as gate stack got thinner, active width became narrower, and channel length increased. By analyzing correlation between current, low-frequency noise, MW/switching speeds, it found excessive thickness degraded MW by charge trapping. Moreover, revealed diminished narrower polarization...
The effects of the grain size Pt bottom electrodes on ferroelectricity hafnium zirconium oxide (HZO) were studied in terms orthorhombic phase transformation. HZO thin films deposited by chemical solution deposition with various sizes which had been direct current sputtering. All samples crystallized rapid thermal annealing at 700 °C to allow a crystallographic phases determined grazing incidence X-ray diffraction, showed that electrode smaller grains resulted larger composition film. As...
The ferroelectric (FE) properties of HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> were studied by modulating the rapid thermal annealing (RTA) rising time ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{r}$ </tex-math></inline-formula> ). As becomes shorter, polarization is clearly observed to increase prior becoming saturated. On contrary, leakage current that flowing through FE...
<title>Abstract</title> Forming gas annealing (FGA) is applied to HfO<sub>x</sub> ferroelectric tunnel junction (FTJ) synaptic devices passivate defects and reduce trap-assisted-tunneling (TAT). Without FGA, TAT caused by in metal–ferroelectric–insulator–semiconductor (MFIS) FTJ stack dominates the conduction mechanism FTJs results no memory window (MW). The reduction of or after FGA reveals effect polarization switching on performance. Consequently, linear/symmetric potentiation depression...
Field-effect transistors on a floating body channel have been used for range of applications, such as three-dimensional nand flash and high-performance devices silicon-on-insulator wafers. Conventional techniques to characterize the defect states cannot be implemented because those do not contacts. A single-pulse charge pumping (SPCP) method was introduced state distribution transistors. The results extracted from SPCP three-terminal (without contact) agreed well with conventional or...
Herein, ferroelectric properties of Hf0.5Zr0.5O2 (HZO) are analyzed by inserting various interlayers (ILs) underneath HZO in capacitors and thin-film-transistors (FeTFTs) with all-sputter-deposited metal/HZO/IL/Si (MFIS) stacks. Although all the films have similar phase ratios regardless IL, only MFIS stack a TiOx IL exhibit polarization switching. To investigate due to introduction TiOx, is checked. It confirmed that TiOx can be polarized movement oxygen vacancies (OVs) depending on...
Individual charge traps in the gate stack of gate-all-around field-effect-transistors have been identified from their random telegraph noise (RTN) characteristics time and frequency domains. The energy level depth location corresponding were extracted capture/emission constant corner frequency. determined to be excited states oxygen vacancies dielectric located 3 nm away interface. Both domain RTN measurements lead an identical result.