A5084632733- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Analytical Chemistry and Sensors
- MXene and MAX Phase Materials
- Geothermal Energy Systems and Applications
- Solar Energy Systems and Technologies
- Education and Learning Interventions
- Advanced Sensor and Energy Harvesting Materials
- BIM and Construction Integration
- Tactile and Sensory Interactions
- Maritime Ports and Logistics
- Landslides and related hazards
- Educational Systems and Policies
- Silicon Carbide Semiconductor Technologies
- Psychosocial Factors Impacting Youth
- Advanced Materials and Mechanics
- Adsorption and Cooling Systems
- Sustainable Supply Chain Management
- Caching and Content Delivery
- Hydrogels: synthesis, properties, applications
- Educational Research and Pedagogy
University of California, San Diego
2025
Sogang University
2023-2025
Chungnam National University
2021-2024
Jeonbuk National University
2022-2024
Seoul National University of Science and Technology
2024
Seoul National University
2001-2023
Kyungpook National University
2017-2021
Bradley University
2016-2020
Inha University
2020
Texas Tech University
2016-2018
The demand of high-performance thin-film-shaped deformable electromagnetic interference (EMI) shielding devices is increasing for the next generation wearable and miniaturized soft electronics. Although highly reflective conductive materials can effectively shield EMI, they prevent deformation owing to rigidity generate secondary pollution simultaneously. Herein, stretchable EMI thin film with absorption-dominant behavior presented. consist liquid metal (LM) layer LM grid-patterned separated...
Wakeup-free and endurance-robust HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) ferroelectric field-effect transistor (FeFET) was fabricated on a silicon-on-insulator substrate. After high-pressure forming gas annealing as the last alloy step, performance endurance of FeFETs were significantly improved by trap states reduction, polarization enhancement, wake-up elimination. As result, show superior exceeding 10 <sup...
Liquid metal is a promising conductor material for producing soft and stretchable circuit "boards" that can enable next-generation electronics by electrically connecting mechanically supporting electronic components. While liquid in general be used to fabricate circuits, magnetic appealing because it self-healing actuators external fields. rendered into particles then sensors catalysts through sonication. We this feature produce "novel" conductive particles. Mixing ferromagnetic iron the...
In this brief, several issues attributed to the channel-release process in vertically stacked-gate-all-around MOSFETs (GAAFETs) having various nanosheet (NS) widths were rigorously investigated. Because of finite selectivity SiGe (sacrificial layer) etchant Si (channel layer), channel is likely be thinned during step which one key processes stacked-GAA FET fabrication. Consequently, thickness and interchannel space becomes variable depending on NS width, since etch time must determined by...
In this work, the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas annealing (HPA) treatment are investigated. The origin <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1/ {f}$ </tex-math></inline-formula> in FeFET HPA is changed from carrier number fluctuation to Hooge's mobility after...
Through a comparative analysis of gate-all-around field-effect transistors (GAAFETs) with the same layout footprint as FinFETs 3-nm technology nodes, effect tapered fin shape on device performance is determined using 3-D computer-aided design (TCAD) simulation. Moreover, this study presents most optimal taper angle in terms various figures merits (FoMs) for standard supply voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">...
We demonstrate a novel ferroelectric-gate field effect transistor with recessed channel (R-FeFET) to improve memory window (MW), program/erase speed, long-time retention, and endurance simultaneously. Based on technology computer-aided design (TCAD) simulations including calibrated ferroelectric material (FE) parameters, it is revealed that the polarization enhanced by larger electric (e-field) across FE compared conventional planar FeFET, resulting in wider MW faster speed. Moreover,...
In this article, a 5-nm node two-stack nanosheet FET with triple-k spacer structure representing three regions consisting of two inner spacers (inner 1 and 2) formed by atomic layer deposition (ALD) processes leveraging the formation-process method outer process stack gate-all-around (GAA) is proposed. Material optimization was performed to confirm effects each regions. Inner has direct effect on channel extension region. However, 2 not in contact region gate, thus confirming relatively...
We demonstrate a HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) ferroelectric field-effect transistor fabricated on silicon-on-insulator substrate, targeting MHz synaptic device applications. Stable multistate weights were implemented with robust retention, excellent linearity, and symmetric potentiation/depression (P/D) in the HZO transistors (FeFETs). To further improve linearity symmetry of P/D to expand operating...
Abstract A material design method is proposed using ferroelectric (FE)–antiferroelectric (AFE) mixed‐phase HfZrO 2 (HZO) to achieve performance improvements in morphotropic phase boundary (MPB) field‐effect transistors (MPB‐FETs), such as steep subthreshold swing ( SS ) and non‐hysteretic on‐current I on enhancement. Capacitance (small‐signal quasi‐static) transient current measurements of MPB‐FETs confirmed that near‐threshold voltage V TH capacitance amplification leads boosts under...
Abstract The increasing demand for high‐performance energy storage systems has driven a significant focus on developing electrolytes lithium‐ion batteries (LIBs), known their high density and cycle stability. Organic play crucial role in enhancing battery performance due to ionic conductivity wide electrochemical However, flammability volatility pose serious safety risks, including thermal runaway fire hazards. To address these issues, research is advancing flame‐retardant electrolytes,...
This study examined a model for enhancing communicative competence and confidence through media-based English speaking portfolios in university-level liberal arts classes. Participants included three sections of an Conversation II course offered during the first semester 2024. Media-based portfolio activities were implemented, their effectiveness was assessed surveys as well midterm final exam video analyses. Findings indicated that most students, who initially reported difficulty beyond...
Abstract Dry‐process fabrication using fibrillatable binder is emerging as a promising method to produce high‐loading electrodes for energy storage applications, favored by its cost‐efficiency and eco‐friendliness. While previous studies have demonstrated the advantages of dry process over traditional slurry method, there remains gap in understanding how particle size active materials influences mechanical electrochemical performance electrodes. In this study, four different NaCrO 2 (Average...
This work considers a landslide caused by the shear band that emerges along potential slip (rupture) surface. The material above slides downwards, causing to grow slope. growth may first be stable (progressive), but eventually becomes dynamic (catastrophic). body acquires finite velocity before it separates from substrata. corresponding initial-boundary value problem for is formulated within framework of Palmer & Rice's ( Proc. R. Soc. Lond. A 332 , 527–548. doi:10.1098/rspa.1973.0040 ))...
This article proposes a novel structure for tunneling-based ternary-complementary metal-oxide-semi conductor (T-CMOS) to break through the power scaling constraints of conventional binary-CMOS. The previous T-CMOS uses off-leakage band-to-band tunneling (BTBT) currents generated at deep drain-to-substrate junction third voltage state, which allows ternary inverter configuration with only two single transistors. However, high-dose ion implantation BTBT layer must affect channel doping...
In this study, silicon nanowire (SiNW) FET-based and SiNW tunnel FET (TFET)-based biosensors are co-integrated with CMOS circuits by using top-down approached CMOS-compatible back-end process simultaneously. The possibility of multiplexed sensing is verified the fabricated TFET biosensors. For multiplexed-sensing, two separate materials which react distinct bio-targets formed partially capping gold on SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this article, the interface trap-assisted ferroelectric polarization in ferroelectric-gate field effect transistors (FeFETs) is investigated based on technology computer-aided design (TCAD) simulations. The metal–ferroelectric–metal (MFM) capacitors and FeFETs are fabricated to reflect device model parameters By introducing traps between layer Interlayer (FE/IL) implementing charge trapping through nonlocal tunneling model, it revealed that trapped charges at FE/IL enhance of FE, they...
C-Repeat/drought responsive element binding factor (CBF1/DREB1b) is a well known transcriptional activator that induced at low temperature and in turn induces the CBF regulon (CBF-targeted genes). We have cloned characterized two CBF1-like cDNAs, CaCBF1A CaCBF1B, from hot pepper. CaCBF1B were not produced response to mechanical wounding or abscisic acid but by low-temperature stress 4°C. When plants returned 25°C, their transcript levels of genes decreased markedly within 40 min. Longterm...