A5044460648- Photonic Crystals and Applications
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Plasmonic and Surface Plasmon Research
- Gas Sensing Nanomaterials and Sensors
- Graphene research and applications
- Semiconductor materials and devices
- Photonic and Optical Devices
- Transition Metal Oxide Nanomaterials
- Optical Coatings and Gratings
- Metamaterials and Metasurfaces Applications
- Advanced Memory and Neural Computing
- GaN-based semiconductor devices and materials
- Quantum and electron transport phenomena
- Advanced biosensing and bioanalysis techniques
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Luminescence and Fluorescent Materials
- Digital Holography and Microscopy
- Gold and Silver Nanoparticles Synthesis and Applications
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Electronic and Structural Properties of Oxides
Universidad Autónoma de Zacatecas "Francisco García Salinas"
2023
Autonomous University of San Luis Potosí
2014-2022
Consejo Nacional de Humanidades, Ciencias y Tecnologías
2015-2018
Universidad Autónoma del Estado de México
2011-2015
Universidad Autónoma del Estado de Morelos
2008-2014
Universidad Nacional Autónoma de México
2014
Abstract We present a spectroscopic ellipsometry study of Mo-doped VO 2 thin films deposited on silicon substrates for the mid-infrared range. The dielectric functions and conductivity were extracted from analytical fittings Ψ Δ ellipsometric angles showing strong dependence dopant concentration temperature. Insulator-to-metal transition (IMT) temperature is found to decrease linearly with increasing doping level. A correction classical Drude model (termed Drude-Smith) has been shown provide...
We report the design and fabrication of complete visible range omnidirectional mirror, with a dielectric multilayered structure based on porous silicon (PS). The refractive index profile consisted Bragg type chirped layers an increasing thicknesses modulated by potential envelop function f(x)=Cxk. photonic band gap (OPBG) was measured from 396 to 805 nm, more than 95% reflectivity, for 8° 68°. theoretical simulations transfer matrix method along photographic sequence sample confirmed OPBG...
We report the design, fabrication, and characterization of a porous silicon-based omnidirectional mirror for near infrared range. The structure consists 300 silicon chirped dielectric layers, optimized to have reflectivity response from 1000 2000 nm wavelength Measurements spectra are presented non-polarized light at several incident angles (range 8°–65°) with >95% covering 1μm band-width. Transfer matrix method calculations were carried out show complete angular range both TM TE...
We use the digital holographic interferometry (DHI) technique to display early ignition process for a butane-air mixture flame. Because such an event occurs in short time (few milliseconds), fast CCD camera is used study event. As more detail required monitoring temporal evolution of process, less light coming from combustion captured by camera, resulting deficient and underexposed image. Therefore, CCD's direct observation limited (down 1000 frames per second). To overcome this drawback, we...
The effect of gradually varying refractive index at each interface a multilayered porous silicon photonic structure is studied experimentally and theoretically. variation the interface, between any two consecutive layers, done in small ladder-like steps (increasing/decreasing) resulting optical properties are compared with standard structures flat similar thickness. proposed proved to be useful reducing stress layers high contrast, mechanically more stable structures.
Abstract We report the theoretical comparison of omnidirectional photonic band gap (OPBG) one-dimensional dielectric structures, using three different refractive index profiles: sinusoidal, Gaussian and Bragg. For values optical thickness, tunability OPBG each profile is shown to depend on maximum, minimum difference indices. An experimental verification was carried out with a multilayered porous silicon structure for all profiles. The optimal combination indices which generates maximum has...
We report on a reflectance anisotropy (RA) spectrometer capable of measuring spectra the 100 ms time-scale and sensitivity in upper 10−4 range. A multichannel lock-in amplifier was used to acquire 32 wavelengths RA covering 2.25–3.85 eV photon energy range, where E1 transitions GaAs other technologically relevant III–V semiconductor are located. The recorded during first stages homoepitaxial deposition presented for 0.38 monolayers growth, showing significative changes lineshape with low...
We report the reflectivity of one-dimensional finite and semi-infinite photonic crystals, computed through coupling to Bloch modes (BM) a transfer matrix method (TMM), their comparison experimental spectral line shapes porous silicon (PS) multilayer structures. Both methods reproduce forbidden bandgap (PBG), but slowly-converging oscillations are observed in TMM as number layers increases infinity, while smooth converged behavior is presented with BM. The spectra good agreement results for...
The merger of the absorption coefficient dispersion, retrieved from transmission by modified Urbach rule introduced Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with extended Roosbroeck-Shockley relation reveals that optical in ZnO distinctively determines photoluminescence lineshape. Additionally, ab initio principles employed enable accurate determination carrier lifetime without further specific probing techniques.
Tunability of the optical response multilayered photonic structures has been compared with sequential (SQ) and superposition (SP) addition refractive index profile functions. The composite structure, formed after SP two Bragg type functions studied as a function percentage overlap relative shift between profiles. Apart from substantial advantage in terms reduced physical thickness (over SQ addition), at certain optimum values shift, better quality factor resonant modes or broader PBG could...
Abstract We report the theoretical comparison of omnidirectional photonic bandgap (OPBG) one-dimensional dielectric structures, using three different refractive index profiles: sinusoidal, Gaussian, and Bragg. For values physical thickness (PT) optical (OT), tunability OPBG each profile is shown to depend on maximum/minimum indices. With an increase in value maximum index, structures with same PT showed a linear increment OPBG, contrast OT, showing optimal combination indices for structure...
We present the electronic spectrum of a n-type delta-doped quantum well in Si coupled to p-type barrier within envelope function efiective mass approximation. applied Thomas-Fermi approximation derive an analytical expression for conflning potential, and thus, we obtain structure simple manner. analyzed electron subband varying distance between doping planes (l) as impurity density them (n2D; p2D). also study mobility trends through empirical formula that is based on levels, wave functions...
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