A5064498903- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- solar cell performance optimization
- Thermography and Photoacoustic Techniques
- Advanced Thermoelectric Materials and Devices
- Perovskite Materials and Applications
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Strong Light-Matter Interactions
- Thin-Film Transistor Technologies
- Phase-change materials and chalcogenides
- Photovoltaic System Optimization Techniques
- Metal Extraction and Bioleaching
- Solar Thermal and Photovoltaic Systems
- Surface Roughness and Optical Measurements
- Economic Growth and Development
- Advanced Measurement and Detection Methods
- Electrical Contact Performance and Analysis
- Nanowire Synthesis and Applications
- Organic Electronics and Photovoltaics
- Magnetic and transport properties of perovskites and related materials
Instituto Politécnico Nacional
2015-2024
Universidad de Guadalajara
2021
Universidad Nacional Autónoma de México
2021
Tecnológico Nacional de México
2019
El Colegio de México
2009
Universidad Autónoma de Madrid
2006
University of Havana
2001-2003
Improvement of the efficiency Cu(2)ZnSnS(4) (CZTS)-based solar cells requires development specific procedures to remove or avoid formation detrimental secondary phases. The presence these phases is favored by Zn-rich and Cu-poor conditions that are required obtain device-grade layers. We have developed a selective chemical etching process based on use hydrochloric acid solutions from CZTS film surface, which partly responsible for deterioration series resistance and, as consequence,...
ABSTRACT Zn‐rich Cu 2 ZnSnSe 4 (CZTSe) films were prepared by a two‐step process consisting in the DC‐magnetron sputtering deposition of metallic stack precursor followed reactive anneal under Se + Sn containing atmosphere. Precursor composition and annealing temperature varied order to analyze their effects on morphological, structural, optoelectronic properties solar cell devices. Raman scattering measurements show presence ZnSe as main secondary phase films, well SnSe at back absorber...
Abstract Large-scale deployment of photovoltaic modules is required to power our renewable energy future. Kesterite, Cu 2 ZnSn(S, Se) 4 , a p-type semiconductor absorber layer with tunable bandgap consisting earth abundant elements, and seen as potential ‘drop-in’ replacement Cu(In,Ga)Se in thin film solar cells. Currently, the record light-to-electrical conversion efficiency (PCE) kesterite-based devices 12.6%, for which has been solution-processed. This must be increased if kesterite...
This paper presents for the first time a theoretical study of impact kesterite/buffer interface recombination and kesterite minority carrier lifetime on both CZTS CZTSe solar cells. It demonstrates that only an 11% efficiency can be reached in cells by improving absorber crystalline quality, pointing out need improved CdS/CZTS interface. further cell enhancement up to 18%, with open-circuit voltage value 918 mV, achieved depending speed values. Moreover, this shows record 17% could without...
This work presents the development of a novel chalcogenization process for fabrication Cu2ZnSn(S,Se)4 (CZTSSe or kesterite)-based solar cells that enable generation sharp graded anionic compositional profiles with high S content at top and low bottom. is achieved through optimization annealing parameters including study several sulfur sources different predicted reactivities (elemental S, thiourea, SnS, SeS2). As result, depending on source employed, devices superficially localized maximum...
In this work, a device model for Cu2ZnSnS4 (CZTS) solar cell with certified world record efficiency is presented. A study of the most important loss mechanisms and its effect on performance was carried out. The trap-assisted tunneling CdS/CZTS interface recombination are introduced as mechanisms. Detailed comparison simulation results to measured parameters shows that our able reproduce experimental observations (quantum efficiency, Jsc, FF, Voc) reported under normal operating conditions....
The compound Sb2(S1−x Se x )3 has recently attracted a great deal of attention from the scientific community for solar cell applications. However, inorganic efficiencies are still limited to values lower than 7%, further studies contributing better understanding limiting factors behind this technology being necessary. In particular, no theoretical works on modeling have been previously reported. work, we present results under radiative and non-radiative limits first time, where our compared...
Kesterite solar cells are at a crossroads, and significant breakthrough in performance is needed for this technology to stay relevant the upcoming years. In work, we propose follow proven strategy of band engineering assist charge carrier collection taking inspiration from chalcopyrite cells. Using process based on combination metallic precursor sputtering chalcogen-reactive annealing, achieve controlled cationic substitutions by partly replacing Sn Ge, hence tailoring several rear gap...
Abstract In this work, a review focused on the recent development of antimony sulfide selenide (Sb 2 (S,Se) 3 ) solar cells is presented. particular, experimental and theoretical results are discussed to understand current limiting factors technology, as well possible routes for device promotion. The Sb compound introduced an attractive single junction multijunction since it described by band-gap that can be tailored in range 1.1–1.8 eV. Furthermore, improved transport properties observed...
Abstract In this work, Cu2O thin films were deposited on glass by reactive sputtering at room temperature, varying the power and oxygen partial pressure in chamber. The films' electrical resistivity, optical, morphological, structural properties studied, results are presented discussed. Single-phase optimized using 120 W 0.7x10-6 bar of pressure. These deposition conditions used to prepare copper oxide onto an Sb2(S,Se)3 layer. resulting with its low resistivity (~10^1 Ω-cm), comparable...
In this work, a review about the influence of growth parameters on chemical and physical properties Cu2ZnSnS4 (CZTS) deposited by pneumatic spray pyrolysis technique its impact thin film solar cells is presented analyzed in order to identify major drawbacks possibility improve device efficiency. Our best cell using sprayed CZTS shows an open-circuit voltage 361 mV, short-circuit current density 7.5 mA/cm2, fill factor 0.37, efficiency 1% under irradiation AM 1.5 100 mW/cm2. Some key...
This work deals with the soda-lime glass/Mo/Cu2ZnSnSe4/CdS/ZnS/i-ZnO/ITO solar cells. CdS/ZnS bilayers were synthesized by chemical bath deposition (CBD) method as buffer layers for Cu2ZnSnSe4 (CZTSe) The depositions carried out varying time of CdS film, while keeping ZnS film constant. devices went from 7.2% efficiency in a reference device using to 10% including thin ZnS. All processed without any additional annealing treatment on layers. J–V, EQE, SEM, Raman, and C–V characterizations...