Elihu Anouchi

ORCID: 0000-0002-1933-775X
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About
Contact & Profiles
Research Areas
  • Transition Metal Oxide Nanomaterials
  • Advanced Memory and Neural Computing
  • ZnO doping and properties
  • Magnetic and transport properties of perovskites and related materials
  • Perovskite Materials and Applications
  • Advanced Condensed Matter Physics
  • Ga2O3 and related materials

Bar-Ilan University
2017-2024

Transition metal oxides are complex electronic systems that exhibit a multitude of collective phenomena. Two archetypal examples VO 2 and NdNiO 3 , which undergo metal–insulator phase transition (MIT), the origin is still under debate. Here this study reports discovery memory effect in both systems, manifested through an increase resistance at specific temperature, set by reversing temperature ramp from heating to cooling during MIT. The characteristics ramp‐reversal do not coincide with any...

10.1002/adma.201605029 article EN Advanced Materials 2017-03-23

The ramp reversal memory (RRM) effect that appears in thin films with temperature-driven insulator-metal transitions (IMTs) is a nonvolatile induced by simple of temperature ramping from heating to cooling during the phase-coexistence state IMT (when both metallic and insulating domains coexist). specific temperatures can be recorded this reversal, which as resistance increase around temperatures. Previous studies showed RRM $\mathrm{V}{\mathrm{O}}_{2}, {\mathrm{V}}_{2}{\mathrm{O}}_{3}$,...

10.1103/physrevmaterials.8.015002 article EN Physical Review Materials 2024-01-09

Memristive devices based on correlated Mott materials have great potential for memory applications, and specifically neuromorphic computations, due to their simple structure, miniaturization capabilities, power efficiency, operation speeds. For these reasons, many efforts are made design improved synaptic materials. This work demonstrates a nonvolatile memristive three-terminal transistor the oxide ${\mathrm{VO}}_{2}$, which has (Mott) metal-insulator transition near room temperature. An...

10.1103/physrevapplied.19.034057 article EN Physical Review Applied 2023-03-17

Due to strong electron-phonon interactions, strain engineering is a powerful tool control quantum critical phenomena in strongly correlated oxides. Exploring this possibility requires understanding the nanoscale structure of materials and role it plays forming landscape. Here, we used combination x-ray nanoimaging reciprocal space mapping study nanostructure archetypal Mott insulator ${\mathrm{VO}}_{2}$, featuring an insulator-to-metal structural phase transitions. We found that...

10.1103/physrevb.102.134106 article EN Physical review. B./Physical review. B 2020-10-12

The recently discovered ramp reversal memory (RRM) is a nonvolatile effect observed in correlated oxides with temperature-driven insulator--metal transitions (IMT). It appears as resistance increase at predefined temperatures that are set or erased by simple heating--cooling (i.e., reversal) protocols. Until now RRM was measured for two materials: ${\mathrm{VO}}_{2}$ and ${\mathrm{NdNiO}}_{3}$. A heuristic model suggests the caused local transition temperature boundaries of spatially...

10.1103/physrevb.106.205145 article EN Physical review. B./Physical review. B 2022-11-28
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