A5090426805- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Thermal Expansion and Ionic Conductivity
- Thermal properties of materials
- Heusler alloys: electronic and magnetic properties
- Magnetic and transport properties of perovskites and related materials
- Advanced Semiconductor Detectors and Materials
- nanoparticles nucleation surface interactions
- Thermal Radiation and Cooling Technologies
- Electron and X-Ray Spectroscopy Techniques
- Advanced Condensed Matter Physics
- Gas Sensing Nanomaterials and Sensors
- Quantum Dots Synthesis And Properties
- Intermetallics and Advanced Alloy Properties
- Integrated Circuits and Semiconductor Failure Analysis
- Luminescence Properties of Advanced Materials
- Chemical and Physical Properties of Materials
- Perfectionism, Procrastination, Anxiety Studies
- Radiation Detection and Scintillator Technologies
- MXene and MAX Phase Materials
- Radiative Heat Transfer Studies
- Thermography and Photoacoustic Techniques
- Thermodynamic and Structural Properties of Metals and Alloys
- Advanced Thermodynamics and Statistical Mechanics
- Advancements in Photolithography Techniques
Indian Institute of Science Bangalore
2017-2024
Netherlands Organisation for Applied Scientific Research
2024
University of Reading
2020-2023
Indian Institute of Technology Dhanbad
2014
Abstract This paper presents tables of key thermoelectric properties, which define conversion efficiency, for a wide range inorganic materials. The twelve families materials included in these are primarily selected on the basis well established, internationally-recognized performance and promise current future applications: tellurides, skutterudites, half Heuslers, Zintls, Mg–Sb antimonides, clathrates, FeGa 3 -type materials, actinides lanthanides, oxides, sulfides, selenides, silicides,...
Understanding the relationship between crystal structure, chemical bonding, and lattice dynamics is crucial for design of materials with low thermal conductivities, which are essential in fields as diverse thermoelectrics, barrier coatings, optoelectronics. The bismuthinite-aikinite series, Cu1-x□xPb1-xBi1+xS3 (0 ≤ x 1, where □ represents a vacancy), has recently emerged family n-type semiconductors exceptionally conductivities. We present detailed investigation electronic properties,...
This article reports luminescence studies on wet-chemical route prepared YVO4:Er3+/Yb3+ microdisc phosphor. The 980 nm laser excited upconversion (UC) emission intensity ratio of green to red bands is found too high neglect the contribution from band, which not observed normally in Er3+/Yb3+-doped materials. also absent downconversion under excitation at 316 nm. variation UC intensities with external temperature exhibits a well-fashioned pattern, suggests that H11/22 and S3/24 levels Er3+...
Owing to the high thermoelectric (TE) conversion efficiency, low cost, and environmental friendliness Mg2Si0.3Sn0.7 solid solution has emerged as material of choice for n-leg a TE generator mid-temperature (room temperature 800 K) applications. Dimensionless figure-of-merit (ZT) values 1.3 (at 700 have been reported in this compound when optimally doped. High ZT are due combination improved electrical properties (band convergence effect) reduced lattice thermal conductivity (alloy scattering...
Superionic Cu2-xTe (CT) is an interesting and emerging p-type thermoelectric (TE) material due to the existence of various polymorphic phases crystal structures, which undergo several structural phase transitions. On basis stoichiometry CT compounds, structure parameters, carrier concentration (np), thermal conductivity (κ) can be modulated for optimum TE performance. Further, understanding fundamental properties their impact on parameters not well understood because complex structures. We...
Cu2Te is a superionic conductor that belongs to the Phonon Liquid Electron Crystal class of thermoelectric (TE) materials. Despite simple chemical formula, crystal structures and phases in system have not been understood properly. In this work, we study structural TE properties (CT2), Cu1.6Te (CT1.6) Cu1.25Te (CT1.25). The samples were synthesized via solid-state reaction method. Powder X-ray diffraction analysis revealed different depending upon Cu : Te stoichiometry. elemental...
Materials with ultralow thermal conductivity are crucial to many technological applications, including thermoelectric energy harvesting, barrier coatings, and optoelectronics. Liquid-like mobile ions effective at disrupting phonon propagation, hence suppressing conduction. However, high ionic mobility leads the degradation of liquid-like materials under operating conditions due ion migration metal deposition cathode, hindering their practical application. Here, a new type behavior, incipient...
The mineral talnakhite, Cu18Fe16S32, is an n-type semiconductor with low thermal conductivity (average value of 1.5 W m−1 K−1), making it attractive candidate for thermoelectric applications. effect partial cation substitutions and deviations from the ideal Cu:Fe ratio on properties this material, has been investigated through synthesis Cu17.58M0.02Fe17.6S32 (M = Ag, In, Zn) Cu17.6+xFe17.6-xS32 (−0.03 ≤ x ≤ 0.03) by high-temperature methods. results demonstrate that talnakhite...
Given the impracticality of using full-size masks for many analytical instruments due to their size and cost constraints, a critical first step towards advancing novel metrology mask degradation was develop validate dicing procedure suitable (EUV-)exposed samples. Small markers were engraved prior facilitate precise navigation locations interest in tools, allow correlation results with both each other EUV dose. Our investigation revealed no discernible changes induced by process, as...
Using a set of controlled in situ grown lamellar composites (Cu2Te)62.02–(Sb2Te3)37.98, we report remarkable variation transport properties thermoelectricity not only as function microstructural length scale but also direction-dependent arrangement the phases and hence their interfaces. A quantitative evaluation microstructure along transverse longitudinal directions growth, imposed by temperature gradient growth rate unidirectional solidification setup, has been carried out. The is...
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Chalcopyrite (CuFeS2) is an earth abundant, non-toxic, thermoelectric (TE) material with a high Seebeck coefficient of -480 µV K−1 at 300 K. But its TE performance hindered due to low electrical conductivity (∼ 29 S cm−1 K) and thermal 6.5 Wm−1K−1 K). Pristine CuFeS2 Co,Se substituted compounds were prepared by solid state method. Powder X-ray diffraction confirmed the formation phase (ICSD#2518). The transport properties measured between temperature 350 673 (S) was negative for pristine...
In a communication to Dalton Transaction and in paper Journal of Physics: Condensed Matter , Aarón H. Barajas-Aguilar et al . have raised comments on our published earlier Transactions