A5016089743- Glass properties and applications
- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Luminescence Properties of Advanced Materials
- Quantum Dots Synthesis And Properties
- Solid State Laser Technologies
- Advancements in Battery Materials
- Perovskite Materials and Applications
- Solid-state spectroscopy and crystallography
- Advanced Battery Materials and Technologies
- Advanced Thermoelectric Materials and Devices
- Nonlinear Optical Materials Studies
- Copper-based nanomaterials and applications
- Photonic and Optical Devices
- Optical and Acousto-Optic Technologies
- Advanced Battery Technologies Research
- Graphene research and applications
- Photonic Crystal and Fiber Optics
- Pigment Synthesis and Properties
- 2D Materials and Applications
- Crystal Structures and Properties
- Nonlinear Optical Materials Research
- Advanced Photocatalysis Techniques
- Hepatocellular Carcinoma Treatment and Prognosis
- Spectroscopy and Laser Applications
Institut des Sciences Chimiques de Rennes
2016-2025
Université de Rennes
2016-2025
Centre National de la Recherche Scientifique
2016-2025
Capital Medical University
2010-2025
Soochow University
2019-2025
Shandong First Medical University
2025
Xihua University
2025
Hunan Institute of Engineering
2014-2025
University of Shanghai for Science and Technology
2025
Northwest Institute of Nuclear Technology
2010-2025
Nitrogen fixation is one of the most important issues but a long-standing challenge in chemistry. Here, we propose FeN3-embedded graphene as catalyst for nitrogen from first-principles calculations. Results show that view chemical coordination, FeN3 center highly spin-polarized with localized magnetic moment substantially to promote N2 adsorption and activate its inert N-N triple bond. The synergy between equips system novel features catalytic conversion activated into NH3 via six-proton...
Antimony selenide (Sb2Se3) is regarded as one of the key alternative absorber materials for conventional thin film solar cells due to its excellent optical and electrical properties. Here, we proposed a Sb2Se3 cell fabricated using two-step process magnetron sputtering followed by post-selenization treatment, which enabled us optimize best quality both Sb2Se3/CdS heterojunction interface. By tuning selenization parameters, with high efficiency 6.06% was achieved, highest reported power...
Despite the fact that antimony triselenide (Sb2 Se3 ) thin-film solar cells have undergone rapid development in recent years, large open-circuit voltage (VOC deficit still remains as biggest bottleneck, even world-record device suffers from a VOC of 0.59 V. Here, an effective interface engineering approach is reported where Sb2 /CdS heterojunction (HTJ) subjected to post-annealing treatment using thermal process. It found nonradiative recombination near HTJ, including and space charge region...
Flexible Bi2 Te3 -based thermoelectric devices can function as power generators for powering wearable electronics or chip-sensors internet-of-things. However, the unsatisfied performance of n-type flexible thin films significantly limits their wide application. In this study, a novel thermal diffusion method is employed to fabricate Te-embedded on polyimide substrates, where Te embeddings be achieved by tuning temperature and correspondingly result in an energy filtering effect at /Te...
Antimony selenide (Sb
Abstract Exhibiting outstanding optoelectronic properties, antimony selenide (Sb 2 Se 3 ) has attracted considerable interest and been developed as a light absorber layer for thin‐film solar cells over the decade. However, current state‐of‐the‐art Sb devices suffer from unsatisfactory “cliff‐like” band alignment severe interface recombination loss, which deteriorates device performance. In this study, heterojunction of an cell is improved by introducing effective aluminum (Al 3+ cation into...
Exploring new near-room-temperature thermoelectric materials is significant for replacing current high-cost Bi
Abstract Inorganic films possess much higher thermoelectric performance than their organic counterparts, but poor flexibilities limit practical applications. Here, Sb 2 Te 3 /Te x hybrid thin with high and flexibility, fabricated via a novel directional thermal diffusion reaction growth method are reported. The enables rationally tuning the content in , which optimizes carrier density leads to significantly enhanced power factor of > 20 µW cm –1 K –2 confirmed by both first‐principles...
Abstract The selenization annealing process is vital for highly efficient kesterite solar cells. Generally, SnS added during the process, but excessive S and related defects are introduced. Meanwhile, path of supplementing Sn has never been elucidated. Herein, in order to solve above problems, a combination strategies involving or SnSe 2 put forward. And composition vapor inhibiting loss (gaseous 3 ) pathway through which facilitates formation Cu ZnSn(S x Se 1‐x 4 (CZTSSe) clarified. When...
Cadmium sulfide (CdS) buffer layer is commonly used in Kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) thin film solar cells. However, the toxicity of (Cd) and perilous waste, which generated during deposition process (chemical bath deposition), narrow bandgap (≈2.4 eV) CdS restrict its large-scale future application. Herein, atomic (ALD) method proposed to deposit zinc-tin-oxide (ZTO) as a Ag-doped CZTSSe It found that ZTO improves band alignment at Ag-CZTSSe/ZTO heterojunction interface. The smaller...
Abstract Antimony triselenide (Sb 2 Se 3 ) has possessed excellent optoelectronic properties and gained interest as a light‐harvesting material for photovoltaic technology over the past several years. However, severe interfacial bulk recombination obviously contribute to significant carrier transport loss thus leading deterioration of power conversion efficiency (PCE). In this work, buried interface heterojunction engineering are synergistically employed regulate film growth kinetic optimize...
Abstract Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a promising candidate for photodetector (PD) applications thanks to its excellent optoelectronic properties. In this work, green solution‐ processed spin coating and selenization‐processed thermodynamic or kinetic growth of high‐quality narrow bandgap kesterite CZTSSe thin film developed. A self‐powered CZTSSe/CdS thin‐film PD then successfully fabricated. Under optimization light absorber heterojunction interface, especially tailoring the...
Abstract Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a promising light absorbing semiconductor for solar energy conversion in photovoltaic cells and photo‐electrochemical (PEC) water‐splitting devices, owing to its earth‐abundant constituents, adjustable band‐gap, superior absorption coefficient. However, the severe charge carrier recombination sluggish separation efficiency are main issues obstructing enhancement of device performance. In this work, planar‐type Mo/CZTSSe/CdS/TiO /Pt photocathode...
Abstract The double gradient bandgap absorber has the potential to enhance carrier collection, improve light collection efficiency, and make performance of solar cells more competitive. However, achieving structure is challenging due comparable diffusion rates cations during high‐temperature selenization in kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) films. Here, it successfully achieved a CZTSSe by spin‐coating K S solution preparation process precursor film. insertion serves as an additional...
Abstract Glass scintillators have several benefits compared to the currently used single or polycrystalline scintillators, including non‐hygroscopicity, mechanical ruggedness, ease of producing customizable shapes, and low‐cost synthesis. The combination inert glass matrix embedded highly scintillating center render them significant materials for medical imaging therapy, non‐destructive probing, nuclear monitoring, high‐energy physics. Recently, great progress has been made in exploring new...
An in situ monitoring reaction can better obtain the variations during progression of photocatalytic reaction. However, complexity apparatus and limited applicability substances are common challenges faced by most methods. Here, we invented an infrared optical fiber sensor to monitor reactants products The sensor, which has four tapered regions, demonstrates best sensitivity 0.71 au/vol %, 70 times higher than that without a region. Then, this was successfully used between benzaldehyde...
Anisotropic carrier transport and deep-level defect of antimony selenosulfide (Sb2(S,Se)3) absorber are two vital auses restraining the photovoltaic performance this emerging thin-film solar cell. Herein, chelate engineering is proposed to prepare high-quality Sb2(S,Se)3 film based on hydrothermal deposition approach, which realizes desirable passivated defects by using tetrahedral PO4 3- ion in dibasic sodium phosphate (Na2HPO4, DSP). The Lewis structure, one hand form [(SbO)3(PO4)]...