A5102723575- ZnO doping and properties
- Copper-based nanomaterials and applications
- Chalcogenide Semiconductor Thin Films
- MXene and MAX Phase Materials
- Machine Learning in Materials Science
- Electronic and Structural Properties of Oxides
- Metal and Thin Film Mechanics
- Quantum Dots Synthesis And Properties
- Advanced Thermoelectric Materials and Devices
- Thin-Film Transistor Technologies
- Heusler alloys: electronic and magnetic properties
- Semiconductor materials and devices
- Gold and Silver Nanoparticles Synthesis and Applications
- Thermal Radiation and Cooling Technologies
- Seismology and Earthquake Studies
- Luminescence Properties of Advanced Materials
- Silicon and Solar Cell Technologies
- Superconductivity in MgB2 and Alloys
- Perfectionism, Procrastination, Anxiety Studies
- Plasmonic and Surface Plasmon Research
- Earthquake Detection and Analysis
- Luminescence and Fluorescent Materials
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Electrostatic Discharge in Electronics
Shenzhen University
2011-2024
Huazhong University of Science and Technology
2022-2024
Wuhan National Laboratory for Optoelectronics
2024
Cadmium sulfide (CdS) buffer layer is commonly used in Kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) thin film solar cells. However, the toxicity of (Cd) and perilous waste, which generated during deposition process (chemical bath deposition), narrow bandgap (≈2.4 eV) CdS restrict its large-scale future application. Herein, atomic (ALD) method proposed to deposit zinc-tin-oxide (ZTO) as a Ag-doped CZTSSe It found that ZTO improves band alignment at Ag-CZTSSe/ZTO heterojunction interface. The smaller...
The high cost and complex production technique restrict the use of conventional thermoelectric generators. In this work, we demonstrate a promising flexible thin film generator using N-type Al-doped ZnO P-type Zn-Sb based film. By cost-effective zinc materials substrate, greatly reduce generator. maximum output power our device with 10 couples is 246.3 μW when temperature difference 180 K. produced per couple unit was 0.14 K-couple, which about several times that other reported. low...
Abstract Kesterite Cu 2 ZnSnS 4 (CZTS) solar cells with CdS buffer layers have the problem of toxicity and cliff‐like energy band diagram disfavoring higher photoelectric conversion efficiency (PCE (%)). The preparation method for ZnSnO which enable Cd‐free CZTS to reach certified PCE (%) 11.4 is limited atomic layer deposition sputtering severely reduces (%). Here, it showed that deposited ZnSnN an efficient cell, without antireflection coating or additional passivation its champion has...
HfO2-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within family is Zr-substituted hafnia, i.e., Hf1−xZrxO2 (HZO). The extent of Zr substitution can be great, x commonly set to 0.5. However, bandgap ZrO2 lower than HfO2, thus it uncertain how content should influence electronic band structure HZO. A reduced detrimental cycling endurance as charge injection dielectric breakdown would become easier. Another issue regarding comparison...
Controlling the emission efficiency, direction, and polarization of optical sources with nanoantennas is crucial importance in many nanophotonic applications. In this article, we design a subwavelength multilayer metal-dielectric nanoantenna consisting three identical gold strips that are separated by two dielectric spacers. It shown local dipole source can efficiently excite several hybridized plasmonic modes nanoantenna, including one electric (ED) magnetic (MD) resonances. The coherent...
The structure and optoelectronic properties of sputtered In2MgO4 (IMO) films as the novel channel material thin film transistors (TFTs) are investigated. IMO have a nano-crystalline with electrical resistivity decreased from 0.25 to 0.11 Ω. cm carrier concentration increased 2.5 × 1018 1.3 1020 cm−3 Hall mobility 5.0 15.0 cm2/(V.s) when deposited at an power which raises crystalline films. Besides higher visible transmittance wider band gap (Eg) (>80%, 4.7 eV) than amorphous InGaZnO4...
In China, efforts are being made to monitor geoelectric fields through a large network of stations deployed and managed by the China Earthquake Administration. The diurnal variations in field waveforms were similar quiet magnetic periods when <i>K</i><5 (generally,<i>K</i><3 indicates time). arrival time points maxima exhibited differences local related geographic longitude. amplitude variation was several 16.6 mV/km decreased with increasing latitude. Further, variation, which...
Laser annealing is a usual step in the process to improve performance of amorphous InGaZnO4 (a-IGZO) thin film transistors (TFTs). However, high energy laser will induce damage a-IGZO films during annealing. Knowing induced thresholds (LIDT) and mechanisms helps use appropriate density avoid achieve best TFTs’ properties. In this article, ultraviolet with wavelength 355 nm pulse width 7.7 ns LIDT are reported. The morphologies characterized optical microscopy scanning electron microscope...
Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets used. The first was In target covered with a fan-shaped Cu plate the same radius and second on which six grains 1.5mm placed equal distance between each other. samples characterized scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that surfaces all are very smooth....
The trap and defect energy levels of ZnSnN2 the current transport mechanism its heterojunctions are studied. A shallow level at 105 meV below conduction band minimum (Ec) is detected possible origin intrinsic antisite SnZn (Sn occupy position Zn in ZnSnN2), besides traps located 0.67, 1.03 1.06 to 1.21 eV Ec. interface states form two discrete with one Ec + 0.05 another Ec−0.03 eV. controlled by thermionic emission relatively low bias voltage limited space charge higher voltage. barrier...
Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering with two targets. The annealed in air at 400 °C for 3 hours and the effect of annealing was investigated. samples are polycrystalline contain mainly In 2 O mixed CuO. Annealing dose not further oxidize samples, possibly due to low temperatures. slightly improves crystalline quality films. increases transmittances almost all annihilating oxygen vacancies hence widening optical band gap. conductivity is but...
The study aims to investigate the method of improving data retention for logic flash by studying different process condition and analyzing how much current drops after 250C baking times in details. According experimental results, it is shown that not only material thickness HTO gate oxide capacitor, but also thermal wet chemical have influence flash.